Papers - HONDA, Yoshio
-
Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed
TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
IEICE technical report. Electron devices Vol. 102 ( 114 ) page: 21 - 24 2002.6
-
Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed
KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
IEICE technical report. Component parts and materials Vol. 102 ( 78 ) page: 27 - 31 2002.5
-
Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed
KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
IEICE technical report. Electron devices Vol. 102 ( 76 ) page: 27 - 31 2002.5
-
Growth of (1-101) GaN on a 7 degrees off axis (001) Si substrate Reviewed
KAMESHIRO Norifumi, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
Technical report of IEICE. SDM Vol. 102 ( 80 ) page: 27 - 31 2002.5
-
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor- phase epitaxy Reviewed
KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
IEICE technical report. Component parts and materials Vol. 102 ( 78 ) page: 15 - 19 2002.5
-
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed
KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
IEICE technical report. Electron devices Vol. 102 ( 76 ) page: 15 - 19 2002.5
-
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy Reviewed
KUROIWA Yousuke, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
Technical report of IEICE. SDM Vol. 102 ( 80 ) page: 15 - 19 2002.5
-
Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed
Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki
Appl. Phys. Lett Vol. 80 ( 2 ) page: 222-224 2002
-
Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed
S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, and T. Tanji
Jpn. J. Appl. Phys. Vol. 41 ( 7B ) page: L846-L848 2002
-
HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed
Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 0 ( 1 ) page: 107-111 2002
-
Fabrication of GaN/AlGaN MQW on (1-101) facet of wurtzite GaN grown on a (111) Si substrate by selective MOVPE Reviewed
T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki
Inst. Phys. Conf. Ser. Vol. 170 page: 789-794 2002
-
Growth of (1-101) GaN on a 7-degree off-oriented (001) Si substrate by selective MOVPE Reviewed
Y. Honda, N. Kameshiro, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 242 ( 1-2 ) page: 82-86 2002
-
Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed
Y. Honda, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 242 ( 1-2 ) page: 77-81 2002
-
Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed
T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 237-239 ( 2 ) page: 1099-1103 2002
-
Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, Iwasaki Ryuta, Sawaki Nobuhiko, Tanji Takayoshi
Japanese Journal of Applied Physics Vol. 41 ( 7 ) page: L846 - L848 2002
-
Fabrication of GaN/AlGaN heterostructures on a (111) Si substrate by selective MOVPE Reviewed
T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 237-239 ( 2 ) page: 1099-1103 2002
-
Transmission electron microscopy study of the microstructure in selective-area-grown GaN and an AlGaN/GaN heterostructure on a 7-degree off-oriented (001) Si substrate Reviewed
S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji
Jpn. J. Appl. Phys. Vol. 41 ( 7B ) page: L846-L848 2002
-
HVPE Growth of GaN on a GaN Templated (111) Si Substrate Reviewed
Y. Honda, T. Ishikawa, Y. Nishimura, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 0 ( 1 ) page: 107-111 2002
-
Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Reviewed
Y. Honda, Y. Kuroiwa, M. Yamaguchi, N. Sawaki
Appl. Phys. Lett Vol. 80 ( 2 ) page: 222-224 2002
-
Growth of GaN crystal free from cracks on a (111) Si substrate by selective MOVPE Reviewed
Y. Honda, Y. Kuroiwa, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 242 ( 1-2 ) page: 77-81 2002