Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Growth of GaN on Si (111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer

Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB16 2013

Growth mode and threading dislocation behavior of GaN films grown on patterned sapphire substrate with radial stripe pattern

Okuno, Koji, Oshio, Takahide, Shibata, Naoki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB09 2013

GaN Overgrowth on Thermally Etched Nanoporous GaN Template

Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JB03 2013

GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy

Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JE07 2013

Fabrication of InGaN/GaN Multiple Quantum Wells on (1bar 101) GaN

Tanikawa, Tomoyuki, Sano, Tomotaka, Kushimoto, Maki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC05 2013

Effects of nano-and microscale SiO2 masks on the growth of a-plane GaN layers on r-plane sapphire

Son, Ji-Su, Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Seo, Yong Gon, Hwang, Sung-Min, Baik, Kwang Hyeon

Japanese Journal of Applied Physics Vol. 52 ( 8S ) page： 08JC04 2013

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

Journal of Applied Physics Vol. 114 ( 15 ) page： 153506 2013

Defects generation and annihilation in GaN grown on patterned silicon substrate

Sawaki, N, Ito, S, Nakagita, T, Iwata, H, Tanikawa, T, Irie, M, Honda, Y, Yamaguchi, M, Amano, H

SPIE OPTO page： 86250K-86250K-6 2013

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, and H. Amano

phys. stat. sol. (a) Vol. 210 ( 2 ) page： 383-385 2012.12

Effects of low energy e-beam irradiation on cathodoluminescence from GaN Reviewed

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

phys. stat. sol. (a) Vol. 210 ( 2 ) page： 383-385 2012.12

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

IEICE technical report. Electron devices Vol. 112 ( 32 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We grew high-quality semipolar (1-101) GaN stripes on a Si substrate by selective area growth and regrew InGaN/GaN MQW on these stripes with MOVPE. The PL peak wavelength at 300 K and InGaN well thickness for the obtained samples were 435-590 nm and 2-9 nm, respectively. In PL measurements from the surface, we found that a shorter wavelength and thinner well sample have PL polarization perpendicular to the c axis. On the other hand, as the PL wavelength is longer and/or the well is thicker, the PL polarization shifts from perpendicular to parallel. In the PL measurement from the (11 -22) edge surface of the sample with shorter wavelength, we observed the narrowing of PL spectrum. In addition, the parallel component of PL polarization increased with increase in well thickness. Therefore, we can control the direction of polarization by managing well thickness and indium composition and apply to make a LD structure.

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

Vol. 112 ( 33 ) page： 15 - 18 2012.5

Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Reviewed

KUSHIMOTO Maki, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, AMANO Hiroshi

Technical report of IEICE. SDM Vol. 112 ( 34 ) page： 15 - 18 2012.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

phys. stat. sol. (b) Vol. 249 ( 3 ) page： 468–471 2012.3

Strain relaxation in thick (1-101)InGaN grown on GaN/Si substrate Reviewed

T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

phys. stat. sol. (b) Vol. 249 ( 3 ) page： 468–471 2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Reviewed

T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 646–649 2012.3

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 875–878 2012.3

Small current collapse in AlGaN/GaN HFETs on a-plane GaN self-standing substrate Reviewed

T. Sugiyama, Y. Honda, M. Yamaguchi, H. Amano, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, M. Imade, Y. Kitaoka, Y. Mori

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 875–878 2012.3

In-situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c-plane sapphire substrates Reviewed

T. Mitsunari, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano

phys. stat. sol. (c) Vol. 9 ( 3-4 ) page： 480–483 2012.3

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Papers - HONDA, Yoshio