Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed

C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed

Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1

Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed

T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki

Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1

Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate Reviewed

Sugiyama Takayuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi, Oshimura Yoshinori, Iida Daisuke, Iwaya Motoaki, Akasaki Isamu

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate Reviewed

Murase Tasuku, Tanikawa Tomoyuki, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes Reviewed

Tanikawa Tomoyuki, Murase Tasuku, Honda Yoshio, Yamaguchi Masahito, Amano Hiroshi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 8 ( 7-8 ) 2011

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation Reviewed

B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

Physica E Vol. 42 ( 10 ) page： 2575-2578 2010.10

HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 7 ( 7-8 ) page： 1760–1763 2010.7

HVPE growth of a -plane GaN on a GaN template (110)Si substrate Reviewed

T. Tanikawa, N. Suzuki, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 7 ( 7-8 ) page： 1760–1763 2010.7

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report Vol. 109 ( 422 ) page： 23 - 28 2010.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well(MQW)thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

選択MOVPE法を用いた極性・非極性GaNストライプ上へのInGaN/GaN MQW構造の作製 Reviewed

TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito

IEICE technical report Vol. 109 ( 423 ) page： 23 - 28 2010.2

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.

HVPE growth of a-plane GaN on a GaN template (110)Si substrate Reviewed

Tanikawa Tomoyuki, Suzuki Noriyuki, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 Vol. 7 ( 7-8 ) 2010

Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

N. Sawaki, X. X. Han, Y. Honda, and M. Yamaguchi

Journal of Physics: Conference Series Vol. 193 page： 012012_1-012012_4 2009.11

Percolation transport in an AlGaN/GaN heterostructure Invited Reviewed

N. Sawaki, X. X. Han, Y. Honda, M. Yamaguchi

Journal of Physics: Conference Series Vol. 193 page： 012012_1-012012_4 2009.11

Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed

M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Korean Phys. Soc. Vol. 54 ( 6 ) page： 2363 2009.6

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Papers - HONDA, Yoshio