Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2349?2352 2005

Characterization of AlGaN layer with high Al content grown by mixed-source HVPE Reviewed

H. S. Ahn, K. H. Kim, M. Yang, J. Y. Yi, H. J. Lee, J. H. Chang, H. S. Kim, S. W. Kim, S. C. Lee, Y Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (a) Vol. 202 ( 6 ) page： 1048?1052 2005

Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy Reviewed

H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R. Cho, H.K. Cho, S.W. Kim, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Surf. Science Vol. 243 ( 1-4 ) page： 178-182 2005

Growth of AlGaN on Al2O3 substrates by Mixed-Source HVPE Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, S. N. Yi, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 361-364 2005

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE Reviewed

T. Hikosaka, Y. Honda, N. Koide, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 251-254 2005

Doping in GaN and AlGaN Grown by Mixed-Source Hydride Vapor Phase Epitaxy Reviewed

J. Y. Yi, Kyoung H. Kim, H. J. Lee, M.?Yang, H. S. Ahn, C. R. Cho, S. C. Lee, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki

Inst. Phys. Conf. Ser. Vol. 184 page： 373-376 2005

Incorporation of carbon on a (1-101) facet of GaN by MOVPE Reviewed

N. Koide, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

J. Cryst. Growth Vol. 284 ( 3-4 ) page： 341?346 2005

Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet Reviewed

T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2349?2352 2005

Uniform growth of GaN on AlN templated (111)Si substrate by HVPE Reviewed

Y. Honda, M. Okano, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 2 ( 7 ) page： 2125? 2128 2005

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

Technical report of IEICE. SDM Vol. 104 ( 43 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

We had grown the GaN/AIN pyramid structure on (111)Si substrate by MOVPE. The non-uniformity of GaN shape was issue to solve. The reason of that was non-uniformity nucleation of AlN intermediate layer. We estimated the uniformity of GaN/AlN pyramid structure with changing the growth time of AlN intermediate layer. In the case of the thin AlN, we got uniform GaN/AlN structure. A thinner film of AlN contribute to the improvement of current-voltage characterization, we think it effective for the field emitting device.

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

IEICE technical report. Component parts and materials Vol. 104 ( 41 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Growth of GaN/AlN pyramid structure on Si substrate by MOVPE

HONDA Yoshio, NAKAMURA Tsuyoshi, YAMAGUCHI Masahito, SAWAKII Nobuhiko

IEICE technical report. Electron devices Vol. 104 ( 39 ) page： 17 - 22 2004.5

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

A. Nishioka, Y. Honda, and N. Sawaki

Proc. of Int. Conf. on Electrical Engineering 2004 Vol. 3-1 page： 297-300 2004

Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2512?2515 2004

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi

J. Cryst. Growth Vol. 260 ( 3-4 ) page： 360-365 2004

Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2474?2477 2004

Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

Appl. Phys. Lett. Vol. 84 ( 23 ) page： 4717-4719 2004

Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

Y. Kuroiwa, Y. Honda, N. Sawaki

Physica E Vol. 21 ( 2-4 ) page： 782-792 2004

Fabrication and optical properties of GaN micro-prism array on an Si substrate Reviewed

A. Nishioka, Y. Honda, N. Sawaki

Proc. of Int. Conf. on Electrical Engineering 2004 Vol. 3-1 page： 297-300 2004

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Reviewed

S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, M. Ichihashi

J. Cryst. Growth Vol. 260 ( 3-4 ) page： 360-365 2004

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