Papers - HONDA, Yoshio
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Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy International journal
Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 5 ) 2016.5
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Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer International journal
Zheng Sun, Kentaro Nagamatsu, Marc Olsson, Peifeng Song, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 5 ) 2016.5
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Observation of relaxation time of surface charge limit for InGaN photocathodes with negative electron affinity International journal
Daiki Sato, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 5 ) 2016.5
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Growth of semipolar (1(1)over-bar01) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001) International journal
Maki Kushimoto, Yoshio Honda, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 5 ) 2016.5
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Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy International journal
Gang Seok Lee, Chanmi Lee, Hunsoo Jeon, Chanbin Lee, Sung Geun Bae, Hyung Soo Ahn, Min Yang, Sam Nyung Yi, Young Moon Yu, Jae Hak Lee, Yoshio Honda, Nobuhiko Sawaki, Suck-Whan Kim
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 5 ) 2016.5
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Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode International journal
Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Jeong Yong Lee, Yoshio Honda, Hiroshi Amano
NANOSCALE RESEARCH LETTERS Vol. 11 ( 1 ) page: 215 2016.4
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Seunga Lee, Yoshio Honda, Hiroshi Amano, Jongjin Jang, Okhyun Nam
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 3 ) 2016.3
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Effect of piezoelectric field on carrier dynamics in InGaN-based solar cells International journal
Seunga Lee, Yoshio Honda, Hiroshi Amano
JOURNAL OF PHYSICS D-APPLIED PHYSICS Vol. 49 ( 2 ) 2016.1
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The interface analysis of GaN grown on 0 degrees off 6H-SiC with an ultra-thin buffer layer
Zheng Sun, Akio Ohta, Seiichi Miyazaki, Kentaro Nagamatsu, Hojun Lee, Marc Olsson, Zheng Ye, Manato Deki, Yoshio Honda, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 55 ( 1 ) 2016.1
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Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications International journal
Akira Hirano, Yosuke Nagasawa, Masamichi Iypommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki
UV and Higher Energy Photonics: From Materials to Applications Vol. 9926 2016
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Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition International journal
Si-Young Bae, Byung Oh Jung, Kaddour Lekhal, Sang Yun Kim, Jeong Yong Lee, Dong-Seon Lee, Manato Deki, Yoshio Honda, Hiroshi Amano
CRYSTENGCOMM Vol. 18 ( 9 ) page: 1505 - 1514 2016
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Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells International journal
Hideaki Murotani, Yoichi Yamada, Yoshio Honda, Hiroshi Amano
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 252 ( 5 ) page: 940 - 945 2015.5
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Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates Reviewed
Vol. 8 ( 2 ) page: 022702 2015.2
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Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano
Applied Physics Express Vol. 8 ( 2 ) page: 022702 2015.2
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Optically pumped lasing properties of (1(1)over-bar01) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates International journal
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano
APPLIED PHYSICS EXPRESS Vol. 8 ( 2 ) 2015.2
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Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region International journal
Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Seunga Lee, Jeong Yong Lee, Dong-Seon Lee, Yoshihiro Kato, Yoshio Honda, Hiroshi Amano
NANO ENERGY Vol. 11 page: 294 - 303 2015.1
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Nature of yellow luminescence band in GaN grown on Si substrate International journal
Shogo Ito, Taihei Nakagita, Nobuhiko Sawaki, Hyung Soo Ahn, Masashi Irie, Toshiki Hikosaka, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 53 ( 11 ) 2014.11
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Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface International journal
Sato Daiki, Nishitani Tomohiro, Maekawa Takuya, Honda Yoshio, Amano Hiroshi
IEICE technical report. Component parts and materials Vol. 114 ( 202 ) page: 49-54 - 54 2014.9
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P-GaN by Mg Ion Implantation for Power Device Applications (シリコン材料・デバイス) International journal
SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 Vol. 114 ( 58 ) page: 109-112 - 112 2014.5
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P-GaN by Mg Ion Implantation for Power Device Applications
SUN Zheng, Olsson Marc, NAGAYAMA Tsutomu, HONDA Yoshio, AMANO Hiroshi
IEICE technical report. Component parts and materials Vol. 114 ( 57 ) page: 109-112 - 112 2014.5