Papers - HONDA, Yoshio
-
Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4
-
Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano
Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4
-
Semi-polar GaN LEDs on Si substrate Reviewed
N. Sawaki, Y. Honda
SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.4
-
Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy Reviewed
Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, H. Amano
Appl. Phys. Lett. Vol. 98 ( 14 ) page： 141905 2011.4
-
Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed
C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 318 ( 1 ) page： 500-504 2011.3
-
Optical properties of (1-101)semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates Reviewed
C.H. Chiu, D.W. Lin, C.C. Lin, Z.Y. Li, Y.C. Chen, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 318 ( 1 ) page： 500-504 2011.3
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
SPIE Vol. 7939 page： 79391X 2011.3
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
SPIE Vol. 7939 page： 79391X 2011.3
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
SPIE Vol. 7939 page： 79391X 2011.3
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate Reviewed
C.H. Chiu, D.W. Lin, Z.Y. Li, S.C. Ling, H.C. Kuo, T.C. Lu, S.C. Wang, W.T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
SPIE Vol. 7939 page： 79391X 2011.3
-
Chiu Ching-Hsueh, Lin Da-Wei, Lin Chien-Chung, LI Zhen-Yu, CHANG Wei-Ting, HSU Hung-Wen, KUO Hao-Chung, LU Tien-Chang, WANG Shing-Chung, LIAO Wei-Tsai, TANIKAWA Tomoyuki, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko
Applied physics express Vol. 4 ( 1 ) page： "012105 - 1"-"012105-3" 2011.1
-
Semi-polar GaN LEDs on Si substrate Reviewed
N. Sawaki and Y. Honda
SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.1
-
Semi-polar GaN LEDs on Si substrate Reviewed
N. Sawaki, Y. Honda
SCIENCE CHINA Technological Sciences Vol. 54 ( 1 ) page： 38-41 2011.1
-
Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1
-
Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1
-
Reduction of Efficiency Droop in Semipolar (1-101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates Reviewed
C.-H. Chiu, D.-W. Lin, C.-C. Lin, Z.-Y. Li, W.-T. Chang, H.-W. Hsu, H.-C. Kuo, T.-C. Lu, S.-C. Wang, W.-T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
Appl. Phys. Express Vol. 4 ( 1 ) page： 01210_1-012105_3 2011.1
-
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11-01) semipolar GaN Reviewed
Z. H. Wu, T. Tanikawa, T. Murase, Y.-Y. Fang, C. Q. Chen, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Appl. Phys. Lett. Vol. 98 ( 5 ) page： 051902_1-051902_3 2011.1
-
Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy Reviewed
T. Murase, T. Tanikawa, Y. Honda, M. Yamaguchi, H. Amano, and N. Sawaki
Jpn. J. Appl. Phys. Vol. 50 ( 1 ) page： 01AD04_1-01AD04_3 2011.1