Papers - HONDA, Yoshio
-
Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Korean Phys. Soc. Vol. 54 ( 6 ) page： 2363 2009.6
-
*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, and B. Monemar
phys. stat. sol. (c) Vol. 6 ( S2 ) page： S772 2009.5
-
*DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Y. Honda, T. Hikosaka, M. Yamaguchi, N. Sawaki, G. Pozina, F. Karlsson, V. Darakchieva, P. Paskov, B. Monemar
phys. stat. sol. (c) Vol. 6 ( S2 ) page： S772 2009.5
-
*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, and M. Yamaguchi
J. Cryst. Growth Vol. 311 ( 10 ) page： 2867 2009.3
-
Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2914 2009.3
-
MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2891 2009.3
-
*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2879 2009.3
-
*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2875 2009.3
-
*Growth and properties of semi-polar GaN on a patterned silicon substrate Reviewed
N. Sawaki, T. Hikosaka, N. Koide, S. Tanaka, Y. Honda, M. Yamaguchi
J. Cryst. Growth Vol. 311 ( 10 ) page： 2867 - 2867 2009.3
-
*Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si Reviewed
T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2879 2009.3
-
*HVPE growth of semi-polar (11-22)GaN on GaN template (113)Si substrate Reviewed
N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2875 2009.3
-
Maskless selective growth of semi-polar (11-22) GaN on Si (311) substrate by metal organic vapor phase epitaxy Reviewed
M. Yang, H. S. Ahn, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2914 2009.3
-
MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Reviewed
M. Irie, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki
J. Cryst. Growth Vol. 311 ( 10 ) page： 2891 2009.3
-
Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, and M. Nishio
J. Phys. D Vol. 42 ( 4 ) page： 045112-1 2009.1
-
Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures Reviewed
X.X. Han XX, T. Honda, T. Narita, M. Yamaguchi, N. Sawaki, T. Tanaka, Q.X. Guo, M. Nishio
J. Phys. D Vol. 42 ( 4 ) page： 045112-1 2009.1
-
DAP emission band in a carbon doped (1-101)GaN grown on (001)Si substrate Reviewed
Honda Yoshio, Hikosaka Toshiki, Yamaguchi Masahito, Sawaki Nobuhiko, Pozina Galia, Karlsson Fredrik, Darakchieva Vanya, Paskov Plamen, Monemar Bo
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 Vol. 6 page： S772 - S775 2009
-
Time-resolved spectroscopy in an undoped GaN (1-101) Reviewed
E.H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 1 ) page： 367-369 2008
-
Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE Reviewed
T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 9 ) page： 2966-2968 2008
-
*Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates Reviewed
T. Hikosaka, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 6 ) page： 2234?2237 2008
-
Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN Reviewed
J. Saida, E. H. Kim, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki
phys. stat. sol. (c) Vol. 5 ( 6 ) page： 1746?1749 2008