Faculty Profiles - HONDA, Yoshio

Papers - HONDA, Yoshio

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Photocurrent spectroscopy of a (0001) GaN/AlGaN/(111)Si heterostructure Reviewed

Y. Kuroiwa, Y. Honda, N. Sawaki

Physica E Vol. 21 ( 2-4 ) page： 782-792 2004

Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1?101) GaN facet Reviewed

Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, Nobuhiko Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2512?2515 2004

Optical and electrical properties of (1-101)GaN grown on a 7[degree] off-axis (001)Si substrate Reviewed

T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

Appl. Phys. Lett. Vol. 84 ( 23 ) page： 4717-4719 2004

Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy Reviewed

K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 1 ( 10 ) page： 2474?2477 2004

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2154-2158 2003

HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

Y. Nishimura, Y. Honda, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2506-2510 2003

Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 page： S622-S624 2003

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, and N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2043-2046 2003

Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S750-S752 2003

Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, and N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S219-S221 2003

HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate Reviewed

Y. Nishimura, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2506-2510 2003

The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth Reviewed

T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2154-2158 2003

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE Reviewed

Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, N. Sawaki

phys. stat. sol. (c) Vol. 0 ( 7 ) page： 2043-2046 2003

Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate Reviewed

K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi, N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S219-S221 2003

Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate Reviewed

H. Kim, K. H. Kim, M. Yang, H. S. Ahn, S. N. Yi, T. Narita, Y. Honda, M. Yamaguchi, N. Sawaki

J. Kor. Phys. Soc. Vol. 42 page： S622-S624 2003

Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE Reviewed

M. Mizushima, T. Kato, Y. Honda, M. Yamaguchi, N. Sawaki

J. Kor. Phys. Soc. Vol. 42 ( Supp. issue 2 ) page： S750-S752 2003

Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AlGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate Reviewed

Tanaka Shigeyasu, Honda Yoshio, Kameshiro Norifumi, IWASAKI Ryuta, SAWAKI Nobuhiko, TANJI Takayoshi

Japanese journal of applied physics. Pt. 2, Letters Vol. 41 ( 7 ) page： L846 - L848 2002.7

Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

IEICE technical report. Electron devices Vol. 102 ( 114 ) page： 25 - 28 2002.6

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (11^^-01) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate Reviewed

NARITA Tetsuo, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. LQE Vol. 102 ( 117 ) page： 25 - 28 2002.6

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (1101) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.

Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Reviewed

TORIKAI Masayuki, KATO Tomonobu, HONDA Yoshio, YAMAGUCHI Masahito, SAWAKI Nobuhiko

Technical report of IEICE. LQE Vol. 102 ( 117 ) page： 21 - 24 2002.6

Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Institute of Electronics, Information and Communication Engineers

MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.

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Papers - HONDA, Yoshio