Papers - USAMI Noritaka
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Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
Arimoto Keisuke, Nakazawa Hiroki, Mitsui Shohei, Utsuyama Naoto, Yamanaka Junji, Hara Kosuke O., Usami Noritaka, Nakagawa Kiyokazu
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 11 ) 2017.11
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Investigation on the origin of preferred a-axis orientation of BaSi2 films deposited on Si(100) by thermal evaporation
K. O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami
Materials Science in Semiconductor Processing ( 72 ) page： 93-98 2017.10
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Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets Open Access
Deng Tianguo, Gotoh Kazuhiro, Takabe Ryota, Xu Zhihao, Yachi Suguru, Yamashita Yudai, Toko Kaoru, Usami Noritaka, Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH Vol. 475 page： 186-191 2017.10
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Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation
Hara Kosuke O., Suzuki Shintaro, Usami Noritaka
THIN SOLID FILMS Vol. 639 page： 7 - 11 2017.10
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Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
K. Arimoto, H. Nakazawa, S. Mitsui, N. Utsuyama, J. Yamanaka, K. O. Hara, N. Usami, and K. Nakagawa
Semiconductor Science and Technology ( 32 ) page： 114002 2017.9
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Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
Hara Kosuke O., Cham Thi Trinh, Kurokawa Yasuyoshi, Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka
THIN SOLID FILMS Vol. 636 page： 546-551 2017.8
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Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation
K. O. Hara, S. Suzuki, N. Usami
Thin Solid Films ( 639 ) page： 7-11 2017.8
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Effects of surface morphology randomness on optical properties of Si-based photonic nanostructures
Kurokawa Yasuyoshi, Aonuma Osamu, Tayagaki Takeshi, Takahashi Isao, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 8 ) 2017.8
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Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed
Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 08MA02 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells
M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 page： 7 2017.7
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On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads
Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 ( 7 ) page： 2886-2892 2017.7
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Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal
Iwata Taisho, Takahashi Isao, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires
Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka
SOLAR ENERGY MATERIALS AND SOLAR CELLS Vol. 166 page： 39 - 44 2017.7
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Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami
Thin Solid Films ( 646 ) page： 546-551 2017.6
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Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets
T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu
Journal of Crystal Growth ( 475 ) page： 186-191 2017.6
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique
Y. Arisawa, K. Sawano, and N. Usami
Journal of Crystal Growth Vol. 468 page： 601-604 2017.6
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Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects
Hayama Yusuke, Takahashi Isao, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 610 - 613 2017.6
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells
G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami
Journal of Crystal Growth Vol. 468 page： 620-624 2017.6
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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa
Journal of Crystal Growth Vol. 468 page： 625-629 2017.6