Papers - USAMI Noritaka
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Effect of Surface Morphology Randomness on Optical Properties of Si-based Photonic Nanostructures Reviewed
Y. Kurokawa, O. Aonuma, T. Tayagaki ,I. Takahashi, and N. Usami
Jpn. J. Appl. Phys. ( 56 ) page： 08MA02 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells
M. M. Rahman, Yi-Chia Tsai, Ming-Yi Lee, A. Higo, Yiming Li, Y. Hoshi, N. Usami, and S. Samukawa
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 page： 7 2017.7
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Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n(+) Solar Cells
Rahman Mohammad Maksudur, Tsai Yi-Chia, Lee Ming-Yi, Higo Akio, Li Yiming, Hoshi Yusuke, Usami Noritaka, Samukawa Seiji
IEEE TRANSACTIONS ON ELECTRON DEVICES Vol. 64 ( 7 ) page： 2886-2892 2017.7
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On the growth mechanism of multicrystalline silicon ingots with small grains fabricated using single-layer silicon beads
Muramatsu Tetsurou, Takahashi Isao, Babu G. Anandha, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation Reviewed International journal
Iwata Taisho, Takahashi Isao, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 7 ) 2017.7
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Impact of anodic aluminum oxide fabrication and post-deposition anneal on the effective carrier lifetime of vertical silicon nanowires
Van Hoang Nguyen, Sichanugrist Porponth, Kato Shinya, Usami Noritaka
SOLAR ENERGY MATERIALS AND SOLAR CELLS Vol. 166 page： 39 - 44 2017.7
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Fabrication of BaSi2 thin films capped with amorphous Si using a single evaporation source
K. O. Hara, C. T. Trinh. Y. Kurokawa; K. Arimoto, J. Yamanaka, K. Nakagawa, and N. Usami
Thin Solid Films ( 646 ) page： 546-551 2017.6
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Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets
T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu
Journal of Crystal Growth ( 475 ) page： 186-191 2017.6
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique
Y. Arisawa, K. Sawano, and N. Usami
Journal of Crystal Growth Vol. 468 page： 601-604 2017.6
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Controlling impurity distributions in crystalline Si for solar cells by using artificial designed defects
Hayama Yusuke, Takahashi Isao, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 610 - 613 2017.6
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells
G.A.Babu, I.Takahashi, T.Muramatsu, and N.Usami
Journal of Crystal Growth Vol. 468 page： 620-624 2017.6
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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
K.Arimoto, S.Yagi, J.Yamanaka, K.O.Hara, K.Sawano, N.Usami, and K.Nakagawa
Journal of Crystal Growth Vol. 468 page： 625-629 2017.6
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Controlling Impurity Distribution in Quasi-mono Crystalline Si Ingot by Seed Manipulation for Artificially Controlled Defect Technique
Y. Hayama, I. Takahashi, and N. Usami
Energy Procedia Vol. 127 page： 610-613 2017.6
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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE
Arimoto Keisuke, Yagi Sosuke, Yamanaka Junji, Hara Kosuke O., Sawano Kentarou, Usami Noritaka, Nakagawa Kiyokazu
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 625 - 629 2017.6
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Towards optimized nucleation control in multicrystalline silicon ingot for solar cells
Babu G. Anandha, Takahashi Isao, Muramatsu Tetsurou, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 620 - 624 2017.6
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Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique
Arisawa You, Sawano Kentarou, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 601 - 604 2017.6
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On the growth mechanism of multicrystalline silicon ingots with small grains by using single layer silicon beads
T. Muramatsu, I. Takahashi, G. Anandha babu, and N. Usami
Japanese Journal of Applied Physics ( 56 ) page： 075502 2017.6
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Effects of grain boundary structure controlled by artificially designed seeds on dislocation generation
T. Iwata, I. Takahashi, and N. Usami
Japanese Journal of Applied Physics ( 56 ) page： 075501 2017.6
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Growth of BaSi2 film on Ge(100) by vacuum evaporation and its photoresponse properties
Cham Thi Trinh, Nakagawa Yoshihiko, Hara Kosuke O., Kurokawa Yasuyoshi, Takabe Ryota, Suemasu Takashi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5
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Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells
Bayu M. Emha, Cham Thi Trinh, Takabe Ryota, Yachi Suguru, Toko Kaoru, Usami Noritaka, Suemasu Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 5 ) 2017.5