Papers - USAMI Noritaka
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In situ observations of crystal growth behavior of silicon melt
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi
Journal of Crystal Growth Vol. 243 ( 2 ) page： 275-282 2002.8
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Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 41 ( 7A ) page： 4462-4465 2002.7
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Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 242 page： 313-320 2002.7
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Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)
N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara
Materials Transactions Vol. 43 ( 7 ) page： 1533-1536 2002.7
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 73 ( 3 ) page： 305-320 2002.7
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 241 ( 3 ) page： 387-394 2002.6
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido
Journal of Crystal Growth Vol. 240 page： 373-381 2002.5
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 72 page： 93-100 2002.4
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In-situ monitoring system of the position and temperature at the crystal-solution interface
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 236 page： 125-131 2002.3
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Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 41 ( 1AB ) page： L37-L39 2002.1
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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 234 page： 516-522 2002.1
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Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization
A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki
Applied Physics Letters Vol. 80 ( 3 ) page： 488-490 2002.1
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Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands
M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA Vol. 66 page： 161-164 2002
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 89 page： 364-367 2002
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Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
JOURNAL OF NON-CRYSTALLINE SOLIDS Vol. 312 page： 196-202 2002
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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Vol. 89 page： 62-65 2002
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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama
Semiconductor Science and Technology Vol. 16 ( 8 ) page： 699-703 2001.8
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Physical model for the evaluation of solid-liquid interfacial tension in silicon
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima
Journal of Applied Physics Vol. 90 ( 2 ) page： 750-755 2001.7
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Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties
K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry
Applied Physics Letters Vol. 79 ( 3 ) page： 344-346 2001.7
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Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 40 ( 6A ) page： 4141-4144 2001.6