Papers - USAMI Noritaka
-
Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 250 page： 298-304 2003.4
-
In-plane orientation and polarity of ZnO epitaxial films on As-polished sapphire (alpha-Al2O3) (0001) substrates grown by metal organic chemical vapor deposition
B. P. Zhang, L. Manh, K. Wakatsuki, K. Tamura, T. Ohnishi, M. Lippma, N. Usami, M. Kawasaki, H. Koinuma and Y. Segawa
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3B ) page： L264-L266 2003.3
-
High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L217-L219 2003.3
-
Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 42 ( 3A ) page： L232-L234 2003.3
-
Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition
B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Kawasaki and Y. Segawa
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS Vol. 42 page： 2291-2295 2003
-
Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures
K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 251 ( 1-4 ) page： 693-696 2003
-
3D atomic imaging of SiGe system by X-ray fluorescence holography
K. Hayashi, Y. Takahashi, E. Matsubara, K. Nakajima and N. Usami
J. Materials Science: Materials in Electronics Vol. 14 page： 459-462 2003
-
Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Journal of Applied Physics Vol. 92 ( 12 ) page： 7098-7101 2002.12
-
In situ observations of crystal growth behavior of silicon melt
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi
Journal of Crystal Growth Vol. 243 ( 2 ) page： 275-282 2002.8
-
Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 41 ( 7A ) page： 4462-4465 2002.7
-
Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 242 page： 313-320 2002.7
-
Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)
N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara
Materials Transactions Vol. 43 ( 7 ) page： 1533-1536 2002.7
-
Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 73 ( 3 ) page： 305-320 2002.7
-
New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 241 ( 3 ) page： 387-394 2002.6
-
Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido
Journal of Crystal Growth Vol. 240 page： 373-381 2002.5
-
Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells Vol. 72 page： 93-100 2002.4
-
In-situ monitoring system of the position and temperature at the crystal-solution interface
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima
Journal of Crystal Growth Vol. 236 page： 125-131 2002.3
-
Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters Vol. 41 ( 1AB ) page： L37-L39 2002.1
-
In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 234 page： 516-522 2002.1
-
Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization
A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki
Applied Physics Letters Vol. 80 ( 3 ) page： 488-490 2002.1