Papers - USAMI Noritaka
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Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates
K.Nakazawa, K.Toko, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH01 2014.2
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Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed
R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04ER04 2014.2
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Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots Open Access
T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami
Optics Express Vol. 22 ( 52 ) page： A225-A232 2014.1
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Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization Open Access
K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu
Applied Physics Letters Vol. 104 ( 2 ) page： 022106 2014.1
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Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays Open Access
T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa
Journal of Synchrotron Radiation Vol. 21 page： 161-164 2014.1
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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains
K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga
Ieee Journal of Photovoltaics Vol. 4 ( 1 ) page： 84-87 2014.1
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1781-1784 2013.12
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1756-1768 2013.12
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Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications
W.Du, M.Baba, R.Takabe, N.Zhang, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1765-1768 2013.12
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Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure
R.Numata, K.Toko, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1769-1772 2013.12
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Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy
R.Takabe, M.Baba, K.Nakamura, W.Du, M.A.Khan, S.Koike, K.Toko, K.O.Hara, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1753-1755 2013.12
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Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
physica status solidi © Vol. 10 page： 1677-1680 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant-Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 page： 112302 2013.11
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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
K.O.Hara, N.Usami, K.Nakamura, R.Takabe, M.Baba, K.Toko, T.Suemasu
Applied Physics Express Vol. 6 ( 11 ) page： 112302 2013.10
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Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells
K.O.Hara, N.Usami
Journal of Applied Physics Vol. 114 page： 153101 2013.10
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Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
M.Baba, S.Tsurekawa, K.Watanabe, W.Du, K.Toko, K.O.Hara, N.Usami, T.Sekiguchi, T.Suemasu
Applied Physics Letters Vol. 103 page： 142113 2013.9
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Investigation of the open-circuit voltage in solar cells doped with quantum dots Open Access
T.Tayagaki, Y.Hoshi, N.Usami
Scientific Reports Vol. 3 page： 2703 2013.9
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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries
K.Kutsukake, N.Usami, Y.Ohno, Y.Tokumoto, I.Yonenaga
Applied Physics Express Vol. 6 page： 025505 2013.9
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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Y.Funase, M.Suzuno, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
Journal of Crystal Growth Vol. 378 page： 365-367 2013.9
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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature
XJ.Xu, N.Usami, T.Maruizumi, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 636-639 2013.9