Papers - USAMI Noritaka
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Growth velocity and grain size of multicrystalline solar cell silicon
I. Brynjulfsen, K. Fujiwara, N. Usami and L. Amberg
Journal of Crystal Growth Vol. 356 page： 17-21 2012.10
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Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko and T. Suemasu
Journal of Applied Physics Vol. 112 ( 8 ) 2012.10
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Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 9 ) 2012.9
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Enhanced carrier extraction from Ge quantum dots in Si solar cells under strong photoexcitation
T. Tayagaki, N. Usami, W. G. Pan, Y. Hoshi, K. Ooi and Y. Kanemitsu
Applied Physics Letters Vol. 101 ( 13 ) 2012.9
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Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 mu m on Si(111)
M. Baba, K. Nakamura, W. J. Du, M. A. Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 9 ) 2012.9
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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao and T. Suemasu
Applied Physics Letters Vol. 101 ( 7 ) 2012.8
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Quantum dot solar cells using 2-dimensional array of 6.4-nm-diameter silicon nanodisks fabricated using bio-templates and neutral beam etching
M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, N. Usami and S. Samukawa
Applied Physics Letters Vol. 101 ( 6 ) 2012.8
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Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities
X. J. Xu, T. Tsuboi, T. Chiba, N. Usami, T. Maruizumi and Y. Shiraki
Optics Express Vol. 20 ( 13 ) page： 14714-14721 2012.6
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Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. O. Hara, N. Usami and T. Suemasu
Journal of Crystal Growth Vol. 348 ( 1 ) page： 75-79 2012.6
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Simultaneous enhanced photon capture and carrier generation in Si solar cells using Ge quantum dot photonic nanocrystals
N. Usami, W. G. Pan, T. Tayagaki, S. T. Chu, J. S. Li, T. H. Feng, Y. Hoshi and T. Kiguchi
Nanotechnology Vol. 23 ( 18 ) 2012.5
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Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki and K. M. Itoh
Applied Physics Letters Vol. 100 ( 22 ) 2012.5
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Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
T. Tsuboi, X. J. Xu, J. S. Xia, N. Usami, T. Maruizumi and Y. Shiraki
Applied Physics Express Vol. 5 ( 5 ) 2012.5
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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu
Journal of Crystal Growth Vol. 345 ( 1 ) page： 16-21 2012.4
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Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress
K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami
Journal of Crystal Growth Vol. 344 ( 1 ) 2012.4
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Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN
T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers
W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu
Applied Physics Letters Vol. 100 ( 15 ) 2012.4
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Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 50 ( 12 ) 2011.12
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The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Journal of Ceramic Processing Research Vol. 12 page： S187-S192 2011.11
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Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima
Journal of Applied Physics Vol. 110 ( 8 ) 2011.10