Papers - USAMI Noritaka
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Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy
M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 47 ( 6 ) page： 4630-4633 2008.6
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In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
Acta Materialia Vol. 56 ( 11 ) page： 2663-2668 2008.6
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On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures
K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 1 ) 2008.1
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Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures Open Access
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Vol. 40 ( 6 ) page： 2122-2124 2008
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Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films
K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura
THIN SOLID FILMS Vol. 516 ( 5 ) page： 600-603 2008
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Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method
R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami
Jpn. J. Appl. Phys. Vol. 47 page： 2927-2931 2008
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Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis
N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 102 ( 10 ) 2007.11
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High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition
K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 46 ( 11 ) page： 7198-7203 2007.11
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Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks
J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami
Applied Physics Letters Vol. 91 ( 1 ) 2007.7
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SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio Open Access
S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima
Applied Physics Letters Vol. 91 2007.7
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Formation mechanism of parallel twins related to Si-facetted dendrite growth
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima
Scripta Materialia Vol. 57 ( 2 ) page： 81-84 2007.7
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Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells
N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima
Applied Physics Letters Vol. 90 ( 18 ) 2007.4
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Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution Open Access
M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 5 ) 2007.3
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Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 6 ) 2007.3
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Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface
S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima
Crystal Growth & Design Vol. 7 ( 2 ) page： 439-444 2007.2
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Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima
Materials Transactions Vol. 48 ( 2 ) page： 143-147 2007.2
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Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells
N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima
Solar Energy Materials and Solar Cells Vol. 91 page： 123-128 2007.1
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Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti
Applied Physics Letters Vol. 90 ( 3 ) 2007.1
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 301 page： 339-342 2007
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth Vol. 301 page： 343-348 2007