Papers - USAMI Noritaka
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Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks
J. S. Xia, K. Nemoto, Y. Ikegami, Y. Shiraki and N. Usami
Applied Physics Letters Vol. 91 ( 1 ) 2007.7
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SiGe double barrier resonant tunneling diodes on bulk SiGe substrates with high peak-to-valley current ratio
S. Tsujino, N. Usami, A. Weber, G. Mussler, V. Shushunova, D. Grutzmacher, Y. Azuma and K. Nakajima
Applied Physics Letters Vol. 91 2007.7
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Formation mechanism of parallel twins related to Si-facetted dendrite growth
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose and K. Nakajima
Scripta Materialia Vol. 57 ( 2 ) page： 81-84 2007.7
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Application of Czochralski-grown SiGe bulk crystal as a substrate for luminescent strained quantum wells
N. Usami, R. Nihei, I. Yonenaga, Y. Nose and K. Nakajima
Applied Physics Letters Vol. 90 ( 18 ) 2007.4
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Improvement in the conversion efficiency of single-junction SiGe solar cells by intentional introduction of the compositional distribution
M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 5 ) 2007.3
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Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Applied Physics Vol. 101 ( 6 ) 2007.3
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Step-induced anisotropic growth of pentacene thin film crystals on a hydrogen-terminated Si(111) surface
S. Nishikata, G. Sazaki, T. Takeuchi, N. Usami, S. Suto and K. Nakajima
Crystal Growth & Design Vol. 7 ( 2 ) page： 439-444 2007.2
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Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido and K. Nakajima
Materials Transactions Vol. 48 ( 2 ) page： 143-147 2007.2
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Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells
N. Usami, W. Pan, K. Fujiwara, M. Tayanagi, K. Ohdaira and K. Nakajima
Solar Energy Materials and Solar Cells Vol. 91 page： 123-128 2007.1
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Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
N. Usami, K. Kutsukake, N. Kazuo, S. Amtablian, A. Fave and M. Lemiti
Applied Physics Letters Vol. 90 ( 3 ) 2007.1
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Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 301 page： 339-342 2007
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Growth temperature dependence of lattice structures of SiGe/graded buffer structures grown on Si(110) substrates by gas-source MBE
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth Vol. 301 page： 343-348 2007
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Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation
M. Suezawa, K. Koilma, A. Kasuya, I. Yonenaga and N. Usami
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 12 ) page： 9162-9166 2006.12
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Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature
J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami and Y. Nakata
Applied Physics Letters Vol. 89 ( 20 ) 2006.11
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Magnetotransport properties of Ge channels with extremely high compressive strain
K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami and K. Nakagawa
Applied Physics Letters Vol. 89 ( 16 ) 2006.10
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Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting
K. Fujiwara, W. Pan, N. Usami, K. Sawada, M. Tokairin, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
Acta Materialia Vol. 54 ( 12 ) page： 3191-3197 2006.7
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High sensitive imaging of atomic arrangement of Ge clusters buried in a Si crystal by X-ray fluorescence holography
S. Kusano, S. Nakatani, K. Sumitani, T. Takahashi, Y. Yoda, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 6A ) page： 5248-5253 2006.6
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Suppression of structural imperfection in strained Si by utilizing SiGe bulk substrate
N. Usami, Y. Nose, K. Fujiwara and K. Nakajima
Applied Physics Letters Vol. 88 2006.5
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Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration
N. Usami, K. Kutsukake, T. Sugawara, K. Fujwara, W. Pan, Y. Nose, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1734-1737 2006.3
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High-efficiency concave and conventional solar cell integration system using focused reflected light
K. Ohdaira, K. Fujiwara, W. Pan, N. Usami and K. Nakajiima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 45 ( 3A ) page： 1664-1667 2006.3