Papers - USAMI Noritaka
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Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots Reviewed
Muramatsu Tetsuro, Hayama Yusuke, Kutsukake Kentaro, Maeda Kensaku, Matsumoto Tetsuya, Kudo Hiroaki, Fujiwara Kozo, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 499 page： 62-66 2018.10
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Fabrication and properties characterization of BaSi2 thin-films thermally-evaporated on Ge (100) modified substrates Reviewed
Mai Thi Kieu Lien, Nakagawa Yoshihiko, Kurokawa Yasuyoshi, Usami Noritaka
THIN SOLID FILMS Vol. 663 page： 14-20 2018.10
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Activation mechanism of TiOx passivating layer on crystalline Si
Mochizuki Takeya, Gotoh Kazuhiro, Ohta Akio, Ogura Shohei, Kurokawa Yasuyoshi, Miyazaki Seiichi, Fukutani Katsuyuki, Usami Noritaka
APPLIED PHYSICS EXPRESS Vol. 11 ( 10 ) 2018.10
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Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks Reviewed
Hombe Atsushi, Kurokawa Yasuyoshi, Gotoh Kazuhiro, Akagi Seimei, Yamamoto Yuzo, Yurasov Dmitry, Novikov Alexey, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Investigation of effective near-infrared light-trapping structure with submicron diameter for crystalline silicon thin film solar cells
Sei Miki, Kurokawa Yasuyoshi, Kato Shinya, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Influence of barrier layer's height on the performance of Si quantum dot solar cells Reviewed
Kitazawa Kouhei, Akaishi Ryushiro, Ono Satoshi, Takahashi Isao, Usami Noritaka, Kurokawa Yasuyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Impact of boron incorporation on properties of silicon solar cells employing p-type polycrystalline silicon grown by aluminum-induced crystallization
Masuda Shota, Gotoh Kazuhiro, Takahashi Isao, Nakamura Kyotaro, Ohshita Yoshio, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks
Ota Yushi, Hombe Atsushi, Nezasa Ryota, Yurasov Dmitry, Novikov Alexey, Shaleev Mikhail, Baidakova Natalie, Morozova Elena, Kurokawa Yasuyoshi, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Photovoltaic Science and Engineering FOREWORD
Matsubara Koji, Yamada Akira, Minemoto Takashi, Itoh Takashi, Arafune Koji, Fujiwara Hiroyuki, Hayase Shuzi, Hiramoto Masahiro, Hishikawa Yoshihiro, Imaizumi Mitsuru, Ito Masakazu, Kaizuka Izumi, Kato Takuya, Komoto Keiichi, Kubo Takaya, Maitani Masato, Masuda Atsushi, Miyajima Shinsuke, Morita Kengo, Negami Takayuki, Ogimoto Kazuhiko, Ohdaira Keisuke, Ohshita Yoshio, Okada Yoshitaka, Okamoto Tamotsu, Osaka Itaru, Sai Hitoshi, Sakurai Takeaki, Shen Qing, Shibata Hajima, Sugaya Takeyoshi, Sugiyama Mutsumi, Takamoto Tatsuya, Tanaka Tooru, Terakawa Akira, Ueda Yuzuru, Usami Noritaka, Wakao Shinji, Yagi Shuhei, Yamanaka Sanshiro, Yoshida Yuji, Yoshita Masahiro
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 8 ) 2018.8
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Effect of substrate type on the electrical and structural properties of TiO2 thin films deposited by reactive DC sputtering
Cheng Xuemei, Gotoh Kazuhiro, Nakagawa Yoshihiko, Usami Noritaka
JOURNAL OF CRYSTAL GROWTH Vol. 491 page： 120-125 2018.6
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Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma
Xu Zhihao, Gotoh Kazuhiro, Deng Tianguo, Sato Takuma, Takabe Ryota, Toko Kaoru, Usami Noritaka, Suemasu Takashi
AIP ADVANCES Vol. 8 ( 5 ) 2018.5
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BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration
Hara Kosuke O., Yamamoto Chiaya, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu, Usami Noritaka
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation
N.M. Shaalan, K.O. Hara, C.T. Trinh, Y. Nakagawa, and N. Usami
Materials Science in Semiconductor Processing Vol. 76 page： 37-41 2018.3
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Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation
Shaalan N. M., Hara K. O., Trinh C. T., Nakagawa Y., Usami N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 76 page： 37 - 41 2018.3
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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
D. V. Yurasov, A. V. Novikov, M. V. Shaleev, N. A. Baidakova, E. E. Morozova, E. V. Skorokhodov, Y. Ota, A. Hombe, Y. Kurokawa, and N. Usami
Materials Science in Semiconductor Processing ( 75 ) page： 143-148 2018.3
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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Yurasov D. V., Novikov A. V., Shaleev M. V., Baidakova N. A., Morozova E. E., Skorokhodov E. V., Ota Y., Hombe A., Kurokawa Y., Usami N.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 75 page： 143 - 148 2018.3
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BaSi2 formation mechanism in thermally-evaporated films and its application to reducing oxygen impurity concentration
K.O. Hara, C. Yamamoto, J. Yamanaka, K. Arimoto, K. Nakagawa, and N. Usami
Japanese Journal of Applied Physics ( 57 ) page： 04FS01 2018.2
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A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%
Yoneda Jun, Takeda Kenta, Otsuka Tomohiro, Nakajima Takashi, Delbecq Matthieu R., Allison Giles, Honda Takumu, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo
NATURE NANOTECHNOLOGY Vol. 13 ( 2 ) page： 102 - + 2018.2
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Suppression of Near-interface Oxidation in Thermally-evaporated BaSi2 Films and Its Effects on Preferred Orientation and the Rectification Behavior of n-BaSi2/p(+)-Si Diodes
Hara Kosuke O., Arimoto Keisuke, Yamanaka Junji, Nakagawa Kiyokazu, Usami Noritaka
MRS ADVANCES Vol. 3 ( 25 ) page： 1387-1392 2018
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Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films
Kurokawa Yasuyoshi, Nezasa Ryota, Kato Shinya, Miyazaki Hisashi, Takahashi Isao, Usami Noritaka
MRS ADVANCES Vol. 3 ( 25 ) page： 1419-1426 2018