Papers - USAMI Noritaka
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed
R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu
( 115 ) page： 193510 2014.5
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Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 368-371 2014.4
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Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties
Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 338-341 2014.4
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Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
R.Numata, K.Toko, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 147-150 2014.4
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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 143-146 2014.4
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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu
Thin Solid Films Vol. 557 page： 90-93 2014.4
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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 ( 9 ) page： 094301 2014.3
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Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method
K.Nakajima, K.Morishita, R.Murai, N.Usami
Journal of Crystal Growth Vol. 389 page： 112-119 2014.3
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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CrystEngComm Vol. 16 ( 13 ) page： 2578-2583 2014.2
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Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange
R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH03 2014.2
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Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates
K.Nakazawa, K.Toko, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH01 2014.2
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Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) Reviewed
R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04ER04 2014.2
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Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots
T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami
Optics Express Vol. 22 ( 52 ) page： A225-A232 2014.1
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Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu
Applied Physics Letters Vol. 104 ( 2 ) page： 022106 2014.1
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Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays
T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa
Journal of Synchrotron Radiation Vol. 21 page： 161-164 2014.1
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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains
K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga
Ieee Journal of Photovoltaics Vol. 4 ( 1 ) page： 84-87 2014.1
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1781-1784 2013.12
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © Vol. 10 page： 1756-1768 2013.12