Papers - USAMI Noritaka
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Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics ( 54 ) page： 04DR03 2015.1
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Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed Open Access
K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu
INTERNATIONAL JOURNAL OF PHOTOENERGY ( 2015 ) page： 790242 2015.1
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バルク結晶成長のこの10年 Reviewed Open Access
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
Vol. 42 ( 1 ) page： pp.64-68 2015
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Light trapping by direction-dependent light transmission in front-surface photonic nanostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Applied Physics Express Vol. 7 page： 122301 2014.11
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Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency
T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami
Japanese Journal of Applied Physics ( 53 ) page： 110312 2014.10
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Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu Vol. 116 page： 123709 2014.9
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Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles Open Access
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS ( 22 ) page： 726-732 2014.7
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Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique
M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu
Japanese Journal of Applied Physics ( 53 ) page： 078004 2014.6
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 page： 223701 2014.6
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Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) Reviewed
R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu
( 115 ) page： 193510 2014.5
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Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 368-371 2014.4
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Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties Open Access
Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami
Thin Solid Films Vol. 557 page： 338-341 2014.4
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Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
R.Numata, K.Toko, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 147-150 2014.4
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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu
Thin Solid Films Vol. 557 page： 143-146 2014.4
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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing Open Access
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu
Thin Solid Films Vol. 557 page： 90-93 2014.4
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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange Open Access
K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Journal of Applied Physics Vol. 115 ( 9 ) page： 094301 2014.3
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Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method Open Access
K.Nakajima, K.Morishita, R.Murai, N.Usami
Journal of Crystal Growth Vol. 389 page： 112-119 2014.3
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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CrystEngComm Vol. 16 ( 13 ) page： 2578-2583 2014.2
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Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange
R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu
Japanese Journal of Applied Physics Vol. 53 page： 04EH03 2014.2