Papers - USAMI Noritaka
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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
K. Toh, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko and T. Suemasu
Journal of Crystal Growth Vol. 345 ( 1 ) page： 16-21 2012.4
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Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress Open Access
K. Nakajima, R. Murai, K. Morishita, K. Kutsukake and N. Usami
Journal of Crystal Growth Vol. 344 ( 1 ) 2012.4
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Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN
T. Iwabuchi, Y. H. Liu, T. Kimura, Y. T. Zhang, K. Prasertsuk, H. Watanabe, N. Usami, R. Katayama and T. Matsuoka
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n(+)-BaSi2/p(+)-Si Tunnel Junction to Undoped BaSi2 Overlayers
W. J. Du, T. Saito, M. A. Khan, K. Toko, N. Usami and T. Suemasu
Japanese Journal of Applied Physics Vol. 51 ( 4 ) 2012.4
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Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells Open Access
W. J. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, K. Nakamura, K. Toko, N. Usami and T. Suemasu
Applied Physics Letters Vol. 100 ( 15 ) 2012.4
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Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
K. O. Hara, N. Usami, Y. Hoshi, Y. Shiraki, M. Suzuno, K. Toko and T. Suemasu
Japanese Journal of Applied Physics Vol. 50 ( 12 ) 2011.12
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The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Journal of Ceramic Processing Research Vol. 12 page： S187-S192 2011.11
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Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth Open Access
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita and K. Nakajima
Journal of Applied Physics Vol. 110 ( 8 ) 2011.10
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Formation mechanism of twin boundaries during crystal growth of silicon
K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita and K. Nakajima
Scripta Materialia Vol. 65 ( 6 ) page： 556-559 2011.9
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Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 4 ( 9 ) 2011.9
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Configuration and local elastic interaction of ferroelectric domains and misfit dislocation in PbTiO3/SrTiO3 epitaxial thin films Open Access
T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami and T. J. Konno
Science and Technology of Advanced Materials Vol. 12 ( 3 ) 2011.6
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Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells
N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 109 ( 8 ) 2011.4
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Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami and Y. Shiraki
Microelectronic Engineering Vol. 88 page： 465-468 2011.4
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In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu, C. Y. Chung, Y. Kawazoe and N. Usami
Japanese Journal of Applied Physics Vol. 50 ( 4 ) 2011.4
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Impact of type of crystal defects in multicrystalline Si on electrical properties and interaction with impurities
I. Takahashi, N. Usami, H. Mizuseki, Y. Kawazoe, G. Stokkan and K. Nakajima
Journal of Applied Physics Vol. 109 ( 3 ) 2011.2
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Pattern formation mechanism of a periodically faceted interface during crystallization of Si
M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 24 ) page： 3670-3674 2010.12
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A grazing incidence small-angle x-ray scattering analysis on capped Ge nanodots in layer structures Open Access
H. Okuda, M. Kato, K. Kuno, S. Ochiai, N. Usami, K. Nakajima and O. Sakata
Journal of Physics-Condensed Matter Vol. 22 ( 47 ) 2010.12
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Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization
H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima and T. Suemasu
Journal of Crystal Growth Vol. 312 ( 22 ) page： 3257-3260 2010.11
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Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope Open Access
L. Gu, Y. Yu, W. Sigle, N. Usami, S. Tsukimoto, J. Maier, Y. Ikuhara and P. A. van Aken
Applied Physics Letters Vol. 97 ( 21 ) 2010.11
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Room-temperature electroluminescence from Si microdisks with Ge quantum dots Open Access
J. S. Xia, Y. Takeda, N. Usami, T. Maruizumi and Y. Shiraki
Optics Express Vol. 18 ( 13 ) page： 13945-13950 2010.6