Papers - USAMI Noritaka
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Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics Vol. 48 ( 2 ) 2009.2
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Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance
K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 105 ( 4 ) 2009.2
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Floating cast method to realize high-quality Si bulk multicrystals for solar cells
Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 311 ( 2 ) page： 228-231 2009.1
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Resonant photoluminescence from Ge self-assembled dots in optical microcavities
J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 page： 883-887 2009
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Local control of strain in SiGe by ion-implantation technique
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 3 ) page： 806-808 2009
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Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 311 ( 3 ) page： 825-828 2009
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Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth Vol. 311 page： 819-824 2009
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Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth Vol. 311 page： 809-813 2009
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Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates
K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth Vol. 311 page： 814-818 2009
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Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt
Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Crystal Growth Vol. 310 ( 24 ) page： 5248-5251 2008.12
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Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima
Japanese Journal of Applied Physics Vol. 47 ( 12 ) page： 8790-8792 2008.12
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Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 12 ) 2008.12
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Room-temperature light-emission from Ge quantum dots in photonic crystals
J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 125-127 2008.11
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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials
N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 14-16 2008.11
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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki
Thin Solid Films Vol. 517 ( 1 ) page： 254-256 2008.11
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Thin Solid Films Vol. 517 ( 1 ) page： 235-238 2008.11
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Vacancy formation during oxidation of silicon crystal surface
M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga
Applied Physics Letters Vol. 93 ( 10 ) 2008.9
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Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express Vol. 1 ( 8 ) 2008.8
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Growth mechanism of Si-faceted dendrites
K. Fujiwara, K. Maeda, N. Usami and K. Nakajima
Physical Review Letters Vol. 101 ( 5 ) 2008.8
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Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals
N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima
Applied Physics Express Vol. 1 ( 7 ) 2008.7