Papers - USAMI Noritaka
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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 ( 1 ) page： 206-209 2005.4
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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal
Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima
Journal of Crystal Growth Vol. 276 page： 393-400 2005.4
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Structural properties of directionally grown polycrystalline SiGe for solar cells
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 275 page： 467-473 2005.3
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On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution
N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers Vol. 44 ( 2 ) page： 857-860 2005.2
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Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami
Applied Physics Letters Vol. 86 ( 3 ) 2005.1
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Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 273 page： 594-602 2005.1
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Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration
N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 44 ( 24-27 ) page： L778-L780 2005
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Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 8 ( 1-3 ) page： 177-180 2005
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Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Materials & Product Technology Vol. 22 page： 185-212 2005
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Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method
K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 44 ( 42-45 ) page： L1316-L1319 2005
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Changes in elastic deformation of strained Si by microfabrication
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing Vol. 8 page： 181-185 2005
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Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing Vol. 79 ( 7 ) page： 1711-1714 2004.11
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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami
Applied Physics Letters Vol. 85 ( 13 ) page： 2514-2516 2004.9
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On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima
Applied Physics Letters Vol. 85 ( 8 ) page： 1335-1337 2004.8
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Low-temperature growth of ZnO nanostructure networks
B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami
Journal of Applied Physics Vol. 96 ( 1 ) page： 340-343 2004.7
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Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process
B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma
Journal of Physical Chemistry B Vol. 108 page： 10899-10902 2004.7
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Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa
Journal of Applied Physics Vol. 96 ( 2 ) page： 1238-1241 2004.7
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Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation
Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara
Japanese Journal of Applied Physics Part 2-Letters & Express Letters Vol. 43 ( 7A ) page： L907-L909 2004.7
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Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition
N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 43 ( 7A ) page： 4110-4113 2004.7
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Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy
T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima
Journal of Crystal Growth Vol. 266 ( 4 ) page： 467-474 2004.6