Papers - USAMI Noritaka
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Simple vacuum evaporation route to BaSi2 thin films for solar cell applications Reviewed
K.O.Hara, Y.Nakagawa, T.Suemasu, and N. Usami
Energy Procedia Vol. 141 page： 27-31 2016.3
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On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation Reviewed
Y.Nakagawaa, K.O.Hara, T.Suemasu, and N.Usami
Energy Procedia Vol. 141 page： 23-26 2016.3
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Improved multicrystalline silicon ingot quality using single layer silicon beads coated with silicon nitride as seed layer
G.Anandha babu, I.Takahashi, S.Matsushima, and N.Usami
Journal of Crystal Growth Vol. 441 page： 124-130 2016.2
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Effect of passivation layer grown by atomic layer deposition and sputtering processes on Si quantum dot superlattice to generate high photocurrent for high-efficiency solar cells
M.M.Rahman, A.Higo, H.Sekhar, M.E.Syazwan, Y.Hoshi, N.Usami, and S.Samukawa
Japanese Journal of Applied Physics ( 55 ) page： 032303 2016.2
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Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides Reviewed
K.O.Hara, W.Du, K.Arimoto, J.Yamanaka, K.Nakagawa, K.Toko, T. Suemasu, and N.Usami
Thin Solid Films Vol. 603 page： 218-223 2016.2
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Compressively strained Si/Si1_xCx heterostructures formed on Ar ion implanted Si(100) substrates Reviewed
Y.Hoshi, Y.Arisawa, K. Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, and N.Usami
Japanese Journal of Applied Physics Vol. 55 page： 031302 2016.2
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Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells
M.M.Rahman, M-Y, Lee, Y-C,Tsai, A. Higo, H.Sekhar, M.Igarashi, M.E.Syazwan, Y.Hoshi, K.Sawano, N.Usami, Y.Li, and S.Samukawa
PROGRESS IN PHOTOVOLTAICS ( 28 ) page： 774-780 2015.12
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Structural and electrical characterizations of crack-free BaSi2 thin filmsfabricated by thermal evaporation
K.O.Hara, J.Yamanaka, K. Arimoto, K.Nakagawa, T.Suemasu, N.Usami
Thin Solid Films Vol. 595 page： 68-72 2015.10
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed
I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami
Applied Physics Express Vol. 8 page： 105501 2015.9
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Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed
V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai
Japanese Journal of Applied Physics Vol. 54 page： 095003 2015.8
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Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KD11 2015.7
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Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed
I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA06 2015.7
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Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed
Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KC03 2015.7
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Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed
V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA02 2015.6
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Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed
O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA01 2015.6
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Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed
K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka
Applied Physics Letters Vol. 106 page： 222102 2015.6
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Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot Open Access
I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami
Journal of Applied Physics ( 117 ) page： 095701 2015.3
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Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed
K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 07JE02 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 ( 3 ) page： 030306 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 page： 030306 2015.2