Papers - USAMI Noritaka
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting Reviewed
I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami
Applied Physics Express Vol. 8 page： 105501 2015.9
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Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template Reviewed
V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai
Japanese Journal of Applied Physics Vol. 54 page： 095003 2015.8
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Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method Reviewed
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KD11 2015.7
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Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots Reviewed
I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA06 2015.7
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Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications Reviewed
Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KC03 2015.7
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Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires Reviewed
V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA02 2015.6
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Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties Reviewed
O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 08KA01 2015.6
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Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy Reviewed
K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka
Applied Physics Letters Vol. 106 page： 222102 2015.6
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Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot
I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami
Journal of Applied Physics ( 117 ) page： 095701 2015.3
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Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications Reviewed
K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami
Japanese Journal of Applied Physics Vol. 54 page： 07JE02 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 ( 3 ) page： 030306 2015.3
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy Reviewed
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics Vol. 54 page： 030306 2015.2
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Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics ( 54 ) page： 04DR03 2015.1
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Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization Reviewed
K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu
INTERNATIONAL JOURNAL OF PHOTOENERGY ( 2015 ) page： 790242 2015.1
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バルク結晶成長のこの10年 Reviewed
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
Vol. 42 ( 1 ) page： pp.64-68 2015
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Light trapping by direction-dependent light transmission in front-surface photonic nanostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Applied Physics Express Vol. 7 page： 122301 2014.11
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Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency
T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami
Japanese Journal of Applied Physics ( 53 ) page： 110312 2014.10
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Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu Vol. 116 page： 123709 2014.9
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Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS ( 22 ) page： 726-732 2014.7
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Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique
M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu
Japanese Journal of Applied Physics ( 53 ) page： 078004 2014.6