Papers - USAMI Noritaka
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Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices
K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller
THIN SOLID FILMS Vol. 369 ( 1-2 ) page： 405-408 2000
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Formation of relaxed SiGe films on Si by selective epitaxial growth
K. Kawaguchi, N. Usami and Y. Shiraki
Thin Solid Films Vol. 369 page： 126-129 2000
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Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
K. Arimoto, N. Usami and Y. Shiraki
Physica E Vol. 8 page： 323-327 2000
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Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
K. Arimoto, T. Sugita, N. Usami and Y. Shiraki
Physical Review B Vol. 60 ( 19 ) page： 13735-13739 1999.11
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Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures
N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura
Physical Review B Vol. 60 ( 3 ) page： 1879-1883 1999.7
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Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction
Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki
Journal of Materials Synthesis and Processing Vol. 7 ( 3 ) page： 205-207 1999.5
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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
E. S. Kim, N. Usami and Y. Shiraki
Semiconductor Science and Technology Vol. 14 ( 3 ) page： 257-265 1999.3
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Optical characterization of strain-induced structural modification in SiGe-based heterostructures
N. Usami, K. Leo and Y. Shiraki
Journal of Applied Physics Vol. 85 ( 4 ) page： 2363-2366 1999.2
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Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications
L. K. Bera, S. K. Ray, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Journal of Electronic Materials Vol. 28 ( 2 ) page： 98-104 1999.2
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Photoluminescence study of InP/GaP highly strained quantum wells
T. Kimura, H. Yaguchi, N. Usami, K. Onabe and Y. Shiraki
INSTITUTE OF PHYSICS CONFERENCE SERIES Vol. 162 page： 511-516 1999
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Sublattice reversal in GaAs/Si/GaAs (100) heterostructures by molecular beam epitaxy
S. J. Koh, T. Kondo, T. Ishiwada, C. Iwamoto, H. Ichinose, H. Yaguchi, T. Usami, Y. Shiraki and R. Ito
Japanese Journal of Applied Physics Part 2-Letters Vol. 37 ( 12B ) page： L1493-L1496 1998.12
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Epitaxial growth and photoluminescence of Si/pure-Ge/Si quantum structures on Si(311) substrates
K. Amano, M. Kobayashi, A. Ohga, T. Hattori, N. Usami and Y. Shiraki
Semiconductor Science and Technology Vol. 13 ( 11 ) page： 1277-1283 1998.11
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Wavy interface morphologies in strained Si1-xGex/Si multilayers on vicinal Si(111) substrates
J. H. Li, Y. Yamaguchi, H. Hashizume, N. Usami and Y. Shiraki
Journal of Physics-Condensed Matter Vol. 10 ( 39 ) page： 8643-8652 1998.10
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Photoluminescence and Raman scattering of pure germanium/silicon short period superlattice
Z. G. Ji, N. Usami, H. Sunamura and Y. Shiraki
Acta Physica Sinica-Overseas Edition Vol. 7 ( 8 ) page： 608-612 1998.8
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Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si
L. K. Bera, S. K. Ray, M. Mukhopadhyay, D. K. Nayak, N. Usami, Y. Shiraki and C. K. Maiti
Ieee Electron Device Letters Vol. 19 ( 8 ) page： 273-275 1998.8
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Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
E. S. Kim, N. Usami and Y. Shiraki
Applied Physics Letters Vol. 72 page： 1617-1619 1998.3
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In-plane potential modulation in tensilely strained AlGaP-based neighboring confinement structure
N. Usami, T. Sugita, T. Ohta, H. Ito, K. Uchida, Y. Shiraki, F. Minami and N. Miura
PHYSICA E Vol. 2 page： 883-886 1998
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Photoluminescence from pure-Ge/pure-Si neighboring confinement structure
N. Usami, M. Miura, H. Sunamura and Y. Shiraki
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Vol. 16 page： 1710-1712 1998
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Exciton diffusion dynamics in quantum nanostructures on V-groove patterned substrates
N. Usami, Y. Shiraki, W. Pan, H. Yaguchi and K. Onabe
Superlattices and Microstructures Vol. 23 ( 2 ) page： 395-400 1998
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Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates
N. Usami, J. Arai, E. S. Kim, K. Ota, T. Hattori and Y. Shiraki
PHYSICA E Vol. 2 page： 137-141 1998