Papers - USAMI Noritaka
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Growth mechanism of the Si < 110 > faceted dendrite
K. Fujiwara, H. Fukuda, N. Usami, K. Nakajima and S. Uda
Physical Review B Vol. 81 ( 22 ) 2010.6
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Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed
I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 7 ) page： 897-901 2010.3
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Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique
Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Journal of Applied Physics Vol. 107 ( 10 ) 2010.3
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Optical anisotropies of Si grown on step-graded SiGe(110) layers
R. E. Balderas-Navarro, L. F. Lastras-Martinez, K. Arimoto, R. Castro-Garcia, O. Villalobos-Aguilar, A. Lastras-Martinez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Applied Physics Letters Vol. 96 ( 9 ) 2010.3
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Formation of uniaxially strained SiGe by selective ion implantation technique
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Thin Solid Films Vol. 518 ( 9 ) page： 2454-2457 2010.2
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Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth
N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics Vol. 107 ( 1 ) 2010.1
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Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation
Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa and Y. Shiraki
Thin Solid Films Vol. 518 page： S162-S164 2010.1
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Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
I. Takahashi, N. Usami, K. Kutsukake, K. Morishita and K. Nakajima
Japanese Journal of Applied Physics Vol. 49 ( 4 ) 2010
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Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate
S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 49 ( 4 ) 2010
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Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase
Japanese Journal of Applied Physics Vol. 49 2010
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Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami
Applied Physics Express Vol. 3 ( 2 ) 2010
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On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Applied Physics Express Vol. 3 ( 9 ) 2010
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Growth behavior of faceted Si crystals at grain boundary formation
K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima
Journal of Crystal Growth Vol. 312 ( 1 ) page： 19-23 2009.12
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Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth
M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima
Physical Review B Vol. 80 ( 17 ) 2009.11
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Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
R. Nihei, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Vol. 48 ( 11 ) 2009.11
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Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Solid-State Electronics Vol. 53 ( 10 ) page： 1135-1143 2009.10
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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures Open Access
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Letters Vol. 95 2009.9
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Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application Open Access
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Journal of Crystal Growth Vol. 311 ( 14 ) page： 3581-3586 2009.7
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Microstructures of Si multicrystals and their impact on minority carrier diffusion length
H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima
Acta Materialia Vol. 57 ( 11 ) page： 3268-3276 2009.6
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Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Applied Physics Express Vol. 2 ( 5 ) 2009.5