Papers - USAMI Noritaka
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Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara and K. Nakajima
Journal of Crystal Growth Vol. 224 page： 204-211 2001.4
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The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures
N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, N. Mesters, M. Miura, L. D. Moldavskaya, A. V. Novikov, J. Pascual, V. V. Postnikov, Y. Shiraki, V. A. Uakhimchuk, N. Usami and M. Y. Valakh
PHYSICS OF LOW-DIMENSIONAL STRUCTURES Vol. 41337 page： 295-301 2001
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Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands
N. Usami, M. Miura, Y. Ito, Y. Araki, K. Nakajima and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 227 page： 782-785 2001
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Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures
K. Ohdaira, N. Usami, K. Ota and Y. Shiraki
PHYSICA E Vol. 11 ( 2-3 ) page： 68-71 2001
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Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies
K. Nakajima, T. Ujihara, G. Sazaki and N. Usami
Journal of Crystal Growth Vol. 220 ( 4 ) page： 413-424 2000.12
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SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, S. Koh, Y. Shiraki, B. Zhang, Y. Segawa and S. Kodama
Applied Physics Letters Vol. 77 ( 22 ) page： 3565-3567 2000.11
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In situ measurement of composition in high-temperature solutions by X-ray fluorescence spectrometry
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers Vol. 39 ( 10 ) page： 5981-5982 2000.10
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Drastic increase of the density of Ge islands by capping with a thin Si layer
N. Usami, M. Miura, Y. Ito, Y. Araki and Y. Shiraki
Applied Physics Letters Vol. 77 ( 2 ) page： 217-219 2000.7
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Modification of the growth mode of Ge on Si by buried Ge islands
N. Usami, Y. Araki, Y. Ito, M. Miura and Y. Shiraki
Applied Physics Letters Vol. 76 ( 25 ) page： 3723-3725 2000.6
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Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands
N. Usami and Y. Shiraki
THIN SOLID FILMS Vol. 369 page： 108-111 2000
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Microscopic probing of localized excitons in quantum wells
N. Usami, K. Ota, K. Ohdaira, Y. Shiraki, T. Hasche, V. Lyssenko and K. Leo
INSTITUTE OF PHYSICS CONFERENCE SERIES ( 166 ) page： 99-102 2000
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Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer
H. Takamiya, M. Miura, N. Usami, T. Hattori and Y. Shiraki
THIN SOLID FILMS Vol. 369 ( 1-2 ) page： 84-87 2000
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Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices
K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller
THIN SOLID FILMS Vol. 369 ( 1-2 ) page： 405-408 2000
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Formation of relaxed SiGe films on Si by selective epitaxial growth
K. Kawaguchi, N. Usami and Y. Shiraki
Thin Solid Films Vol. 369 page： 126-129 2000
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Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
K. Arimoto, N. Usami and Y. Shiraki
Physica E Vol. 8 page： 323-327 2000
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Effect of the insertion of an ultrathin AlP layer on the optical properties of GaAsP/GaP quantum wells
K. Arimoto, T. Sugita, N. Usami and Y. Shiraki
Physical Review B Vol. 60 ( 19 ) page： 13735-13739 1999.11
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Magnetophotoluminescence spectroscopy of AlGaP-based neighboring confinement structures
N. Usami, T. Sugita, T. Ohta, F. Issiki, Y. Shiraki, K. Uchida and N. Miura
Physical Review B Vol. 60 ( 3 ) page： 1879-1883 1999.7
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Study of a pure-Ge/Si short-period superlattice by x-ray double crystal diffraction
Z. G. Ji, H. M. Lu, S. G. Zhang, D. L. Que, N. Usami, H. Sunamura and Y. Shiraki
Journal of Materials Synthesis and Processing Vol. 7 ( 3 ) page： 205-207 1999.5
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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy
E. S. Kim, N. Usami and Y. Shiraki
Semiconductor Science and Technology Vol. 14 ( 3 ) page： 257-265 1999.3
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Optical characterization of strain-induced structural modification in SiGe-based heterostructures
N. Usami, K. Leo and Y. Shiraki
Journal of Applied Physics Vol. 85 ( 4 ) page： 2363-2366 1999.2