Papers - USAMI Noritaka
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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique
K.Sawano, Y.Hoshi, S.Nagakura, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 251-253 2013.9
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells Open Access
M.A.Khan, K.O.Hara, K.Nakamura, W.J.Du, M.Baba, K.Toh, M.Suzuno, K.Toko, N.Usami, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 201-204 2013.9
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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
S.Koike, K.Toh, M.Baba, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 198-200 2013.9
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Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates
K.Arimoto, S.Sakai, H.Furukawa, J.Yamanaka, K.Nakagawa, N.Usami, Y.Hoshi, K.Sawano, Y.Shiraki
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 212-217 2013.9
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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy Open Access
M.Baba, K.Toh, K.Toko, K.O.Hara, N.Usami, N.Saito, N.Yoshizawa, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 378 page： 193-197 2013.9
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Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization Open Access
K. Nakazawa, K. Toko, N. Saitoh, N.Usami and T. Suemasu
Ecs Journal of Solid State Science and Technology Vol. 2 ( 11 ) page： Q195-Q199 2013.8
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Control of Dip Shape in Photonic Nanostructures by Maskless Wet-Etching Process and Its Impact on Optical Properties
Y.Hoshi, WG.Pan, T.Kiguchi, K.Ooi, T.Tayagaki, N.Usami
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 52 ( 8 ) page： UNSP 080202 2013.8
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Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Crystal Growth & Design Vol. 13 ( 9 ) page： 3908-3912 2013.7
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Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates Open Access
K.Toko, N.Fukata, K.Nakazawa, M.Kurosawa, N.Usami, M.Miyao, T.Suemasu
JOURNAL OF CRYSTAL GROWTH Vol. 372 page： 189-192 2013.6
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Effect of Ga content and growth temperature on Cu(In,Ga)Se2 thin film deposited on heat-resistant glass substrates
T.Higuchi, N.Usami, T.Minemoto
Phys.Status Solidi C Vol. 10 page： 1035-1037 2013.5
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Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells Open Access
M.Igarashi, WG.Hu, M.M.Rahman, N.Usami, S.Samukawa
NANOSCALE RESEARCH LETTERS Vol. 8 page： 228 2013.5
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Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu,
THIN SOLID FILMS Vol. 534 page： 470-473 2013.5
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Effects of crystal defects and their interactions with impurities on electrical properties of multicrystalline Si
S.Joonwichien, S.Matsushima, N.Usami
JOURNAL OF APPLIED PHYSICS Vol. 113 ( 13 ) page： 133503 2013.4
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Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
R.Numata, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CRYSTAL GROWTH & DESIGN Vol. 13 ( 4 ) page： 1767-1770 2013.4
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In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications Open Access
M.A.Khan, K.O.Hara, W.Du, M.Baba, K.Nakamura, M.Suzuno, K.Toko, N.Usami, T.Suemasu
APPLIED PHYSICS LETTERS Vol. 102 ( 11 ) page： 112107 2013.3
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Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111) Open Access
K. Nakamura, M. Baba, M. A. Khan, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko and T. Suemasu
Journal of Applied Physics Vol. 113 ( 5 ) 2013.2
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Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto and I. Yonenaga
Applied Physics Express Vol. 6 ( 2 ) 2013.2
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On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process
N. Usami, M. N. Jung and T. Suemasu
Journal of Crystal Growth Vol. 362 page： 16-19 2013.1
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Effects of formation of mini-bands in two-dimensional array of silicon nanodisks with SiC interlayer for quantum dot solar cells
M. Igarashi, M. F. Budiman, W. G. Pan, W. G. Hu, Y. Tamura, M. E. Syazwan, N. Usami and S. Samukawa
Nanotechnology Vol. 24 ( 1 ) 2013.1
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Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy
K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano and Y. Shiraki
Journal of Crystal Growth Vol. 362 page： 276-281 2013.1