研究者詳細 - 石川　健治

論文 - 石川　健治

分割表示 365 件中 161 - 180 件目／全件表示 >>

Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system 査読有り

Fukunaga, Y; Tsutsumi, T; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Anisotropic etching was conducted in H2/N2 plasma. Subsequently, etched organic features were trimmed for a period longer than 300 s, while the substrate temperature was precisely controlled within ±1.2 °C of a set temperature. This temperature control was achieved by automatically-operated on-off sequences of the plasma excitation and bias powers. The free-standing feature, with a width narrower than 12 nm, was fabricated in a self-limiting manner. This manner was achieved by a balance moving between the etching and adsorption of the H and N atoms in the H2/N2 plasma, transited under a constant substrate temperature of 100 °C.

DOI： 10.7567/1347-4065/aaf92a

Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-<i>k</i> interconnects 査読有り

Miyajima, H; Watanabe, K; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The dielectric interface for a stack of SiOC and SiCN films in Cu/low-k interconnects is engineered using Ar plasma pretreatment of the top surface of SiCN, which prevents oxidization during SiOC film deposition. Oxidized SiCN causes delamination of the SiOC film and resist poisoning through amines generated during resist baking, which can lead to undeveloped photoresist. The Ar plasma pretreatment in the plasma-enhanced chemical vapor deposition chamber modifies the interface by redepositing a thin pre-coated SiOC film from the upper electrode surface. This redeposited SiOC film acts as a buffer for oxygen plasma during SiOC film deposition.

DOI： 10.7567/1347-4065/aafb5b

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl<sub>2</sub> gas mixtures and a separate supply of nitrogen precursors from a high density radical source 査読有り

Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kohno, M; Kinose, K; Nadahara, S; Nishikawa, M; Ebe, A; Ishikawa, K; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl2-mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N2-H2 inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl2-added Ar sputtering at a low growth temperature of 670 ?C, whilst the growth mode coalesced at temperatures lower than 600 ?C. With more than 2.0% of Cl2, no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 ?C. At the growth temperature of 670 ?C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl2 and 27.4% N2, even though the background pressure was 10-4 Pa.

DOI： 10.7567/1347-4065/aaeb39

Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Han, JG; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Control of the bonding structure in carbon materials is achieved by a post-treatment of atmospheric pressure plasma (APP) for magnetron-sputtered carbon films. The APP post-treatment changes the films morphologically owing to the removal and modification of sp2 bonds on the basis of the near edge X-ray absorption fine structure analysis of sp2 contents. By APP post-treatment, the resulting changes in surface and bulk properties modify the optical and electrical properties of the carbon films. The control of the film properties can be utilized for various applications, such as gas sensors and solar cells.

DOI： 10.7567/1347-4065/aaec87

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Ikarashi, N; Hori, M

ACS APPLIED NANO MATERIALS 2 巻 ( 2 ) 頁： 649 - 654 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ACS Applied Nano Materials

The in situ binding of tin oxide (SnO2) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl2·2H2O) in ethanol as the only precursor. Transmission electron microscopy, Raman analysis, and X-ray diffraction revealed the composite (SNp/GNs) synthesis with SNp of sizes 2-3 nm, which were distributed uniformly and attached to both sides of the GNs. The SNp/GNs composite synthesis was provided by the simple, low-cost, single-processing method of the in-liquid plasma for future gas-sensing and lithium-ion battery applications.

DOI： 10.1021/acsanm.8b02201

Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C<sub>2</sub>F<sub>6</sub>/H<sub>2</sub> plasma-enhanced chemical vapor deposition 査読有り

Imai, S; Kondo, H; Hyungjun, C; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 1 ) 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

The electrochemical durability of Pt nanoparticles-supported carbon nanowalls (Pt/CNWs) determined from potential cycle tests was 88% performance after 20 000 cycles and 50% performance around 140 000 cycles when the CNWs were fabricated by the C 2 F 6 /H 2 plasma-enhanced chemical vapor deposition system (C 2 F 6 -CNWs). Even after the extended start/stop-simulation tests of fuel cell Pt/C 2 F 6 -CNWs, Pt was aggregated; however, the morphological structure of the CNWs was maintained and no corrosion was evident from scanning electron microscopy observations and Raman analysis. For graphene-based catalyst supports, i.e., the Pt/C 2 F 6 -CNWs, graphene crystallinity is essential to extend electrochemical durability by inhibiting corrosion during fuel cell operation.

DOI： 10.7567/1882-0786/aaf0ab

Batch Fabrication of Nano-Gap Electrode Array Using Photo-Patterning and Resist UV-Curing

Nguyen Hai Minh, Kumeuchi Mako, Kumagai Shinya, Ishikawa Kenji, Hori Masaru, Sasaki Minoru

IEEJ Transactions on Sensors and Micromachines 139 巻 ( 1 ) 頁： 27 - 28 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electrical Engineers of Japan

<p>A nano-gap electrode array is batch-fabricated based on photolithography. A high resolution is obtained by using an over-hanging resist cover on the under-etched metal film. The process includes two-time mask-patterning. The first photoresist is UV-cured, allowing second patterning without degrading the first pattern. A nano-gap width of 237±63 nm is obtained from a 704-electrode array with an yield of 97%.</p>

DOI： 10.1541/ieejsmas.139.27

Molecular mechanisms of non-thermal plasmainduced effects in cancer cells 査読有り

Tanaka, H; Mizuno, M; Ishikawa, K; Toyokuni, S; Kajiyama, H; Kikkawa, F; Hori, M

BIOLOGICAL CHEMISTRY 400 巻 ( 1 ) 頁： 87 - 91 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Biological Chemistry

Plasma is the fourth state of matter with higher energy than gas; non-thermal plasma (NTP) is currently available. As NTP is useful in sterilization, promoting wound healing and cancer treatments, the molecular mechanisms of plasma-induced effects in living cells and microorganisms are of significant interest in plasma medicine with medical-engineering collaboration. Molecular mechanisms of plasma-induced effects in cancer cells will be described in this minireview. Both direct and indirect methods to treat cancer cells with NTP have been developed. NTP interacts directly with not only cancer cells but also the liquids surrounding cancer cells and the immune cells that target them. Reactive oxygen and nitrogen species play key roles in NTP-induced effects; however, other mechanisms have been suggested. The complex interactions between NTP, cells and liquids have been extensively studied. In the future, details regarding NTP-induced effects on gene regulatory networks, signaling networks, and metabolic networks will be elucidated.

DOI： 10.1515/hsz-2018-0199

Single-cell microscopic raman spectroscopy for rapid microbial detection 査読有り

Onoshima D., Uchida K., Yukawa H., Ishikawa K., Hori M., Baba Y.

23rd International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2019 頁： 1374 - 1375 2019年

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：23rd International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2019

We present a study of microbial Raman spectroscopy towards optimal approach of rapid microbiological methods (RMMs). Raman spectra of single microorganism cells were measured and analyzed by data clustering to identify the microbial species without culturing for colony formation.

Effect of N<sub>2</sub>/H<sub>2</sub> plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) 査読有り Open Access

Amalraj, FW; Dhasiyan, AK; Lu, Y; Shimizu, N; Oda, O; Ishikawa, K; Kondo, H; Sekine, M; Ikarashi, N; Hori, M

AIP ADVANCES 8 巻 ( 11 ) 2018年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：AIP Advances

We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) technology by which Gallium Nitride (GaN) grows at low temperatures without ammonia gas. In this method, we investigated the effect of N2/H2 plasma on the GaN substrate surface cleaning prior to the growth of homoepitaxial GaN. In-situ reflection high-energy electron diffraction (RHEED) and atomic force microscope (AFM) were used to investigate the surface morphology of the cleaned GaN substrates. The interface between GaN substrate and homoepitaxially grown GaN by REMOCVD was evaluated by transmission electron microscope and the crystal quality was evaluated by X-ray diffraction. The in-situ N2/H2 plasma cleaning at 600 °C shows a smooth surface morphology with streak diffraction lines observed by RHEED. Since the homoepitaxial growth of GaN was performed at 800 °C, the cleaned GaN substrate temperature was ramped up from 600 °C to 800 °C with and without plasma exposure to compare the effect of plasma. Homoepitaxially grown GaN on GaN substrates whose temperature was ramped up with plasma exposure showed good crystal quality with no threading dislocations at the interface. It was found that N2/H2 plasma plays a significant role in the GaN surface cleaning for good quality crystal growth.

DOI： 10.1063/1.5050819

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching 査読有り

Zhang, Y; Imamura, M; Ishikawa, K; Tsutsumi, T; Kondo, H; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

To satisfy the requirement for mask materials in high-temperature plasma etching, a novolac-based polymer mask was evaluated during high-temperature Cl2 plasma etching. Although the etch rate of 8 nm/min was rather high at a low temperature of 230 °C, it decreased with the increase in temperature. The aromatic ring structures were significantly modified by vacuum ultraviolet (VUV) and Cl radicals during the processes above 300 °C and transformed to a highly cross-linked amorphous carbon (a-C) layer at the surface confirmed from infrared and Raman spectra. The formation of this a-C layer improved the etching resistance of the polymer mask. On the other hand, surface roughness can also be improved after processes above 300 °C corresponding to the generation of the a-C layer. Therefore, this polymer mask is a promising candidate for high-temperature plasma etching with high etch resistance, and a smooth surface can be obtained during processes above 300 °C.

DOI： 10.7567/JJAP.57.106502

Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH<sub>4</sub>/H<sub>2</sub> at 300-500 °C 査読有り

Kako, T; Liu, ZC; Ishikawa, K; Kondo, H; Oda, O; Sekine, M; Hori, M

VACUUM 156 巻頁： 219 - 223 2018年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Vacuum

Elevated-temperature etching with CH4/H2 plasma chemistry at 300 °C improves damage-less optical properties of GaN, solving issues of degradation on near-band-edge photoluminescence intensity on plasma etching at lower temperatures than 300 °C. Damage-less etching properties in a smooth surface, high photoluminescence intensity, and substantial stoichiometric ratio of gallium and nitrogen were obtained when the CH4/H2 chemistry with substrate temperatures at 300–500 °C.

DOI： 10.1016/j.vacuum.2018.07.040

Cytotoxic effects of plasma-irradiated fullerenol 査読有り

Kanno, D; Tanaka, H; Ishikawa, K; Hashizume, H; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 51 巻 ( 37 ) 2018年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D: Applied Physics

Fullerenol dissolved in water was irradiated with a non-equilibrium atmospheric pressure plasma. Plasma irradiation altered the fullerenol solution by introducing carbonyl groups, ether bonds, and intercalated nitrate anions. The resulting plasma-irradiated fullerenol (PF) was added in cell culture medium. PF-supplemented medium exhibited a cytotoxic effect on HeLa cells. Notably, HeLa cells cultured in the PF-added cell culture medium generated intracellular reactive oxygen and nitrogen species, such that the endocytosis of PF induced the apoptotic cell death. The cytotoxic effect inducing apoptosis was found in the PF-supplemented medium.

DOI： 10.1088/1361-6463/aad510

大気圧プラズマ処理による異種材料接合招待有り査読有り

近藤博基, 堤隆嘉, 石川健治, 関根誠, 堀勝

化学工学 82 巻 ( 9 ) 2018年9月

New hopes for plasma-based cancer treatment 査読有り

Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Shinya Toyokuni, Hiroaki Kajiyama, Fumitaka Kikkawa, and Masaru Hori

Plasma 1 巻 ( 1 ) 頁： 150 - 155 2018年9月

Real-time control of a wafer temperature for uniform plasma process 査読有り

Tsutsumi T., Fuknaga Y., Ishikawa K., Kondo H., Sekine M., Hori M.

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings 2018-December 巻 2018年7月

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）出版者・発行元：IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

Our developed non-contact method for measurement of temperature of silicon (Si) wafer by using autocorrelation-type fourier domain low coherence interferometer has advantageous in accuracy and rapid response. We demonstrate measurements in temperature for Si wafer at real-time during plasma process and in estimation of heat flux to the wafer from plasma, involving heats balanced plasma source and conductive loss in Si. The analysis indicated that other heat sources like the chamber parts with relatively high temperature impact on the duty ratio during the process with feedback control of the wafer teperture.

DOI： 10.1109/ISSM.2018.8651183

Dissociative properties of 1,1,1,2-tetrafluoroethane obtained by computational chemistry 査読有り

Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The electronic properties and dissociative channels of the alternative to the CCl2F2 (CFC-12) refrigerant, 1,1,1,2-tetrafluoroethane (HFC-134a) with a low global warming potential (GWP, 1430), were revealed by computational chemistry. The results show that CF3+ and CHF2+ ions are mainly produced by ionization. The CF3CH2+ ion is produced by ion pair formation and by direct ionization in the energy region higher than approximately 15 eV, but also in small amounts by the ionization of the dissociated CF3CH2 radical. This information is useful for etching process engineers in leading-edge semiconductor manufacturing.

DOI： 10.7567/JJAP.57.06JC02

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma 査読有り

Liu, ZC; Ishikawa, K; Imamura, M; Tsutsumi, T; Kondo, H; Oda, O; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

DOI： 10.7567/JJAP.57.06JD01

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? 査読有り国際共著 Open Access

Ishikawa, K; Karahashi, K; Ishijima, T; Cho, SI; Elliott, S; Hausmann, D; Mocuta, D; Wilson, A; Kinoshita, K

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication of high-aspect-ratio features, including emerging design technology for manufacturability. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands of nanoscale deposition and etching technologies for high-aspect-ratio features. The discussion of our atomic-scale understanding of physicochemical reactions involving ion bombardment and neutral transport presents the major challenges shared across the plasma science and technology community. Focus is placed on advances in fabrication technology that control surface reactions on three-dimensional features, as well as state-of-the-art techniques used in semiconductor manufacturing with a brief summary of future challenges.

DOI： 10.7567/JJAP.57.06JA01

Low-autofluorescence fluoropolymer membrane filters for cell filtration 査読有り Open Access

Kihara, N; Kuboyama, D; Onoshima, D; Ishikawa, K; Tanaka, H; Ozawa, N; Hase, T; Koguchi, R; Yukawa, H; Odaka, H; Hasegawa, Y; Baba, Y; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

A fluoropolymer membrane filter with through-holes was fabricated by photolithographic patterning and the dry etching method. 380,000 highly packed through-holes, each with a diameter of 7 µm were able to cover a whole area with a diameter of 13 mm. Ethylene tetrafluoroethylene (ETFE) was used as the membrane, which was suitable for the fluorescence detection of rare cells such as circulating tumor cells (CTCs) in human blood. The device fabrication for the size based capture of rare cells in blood such as CTCs is realized in this study.

DOI： 10.7567/JJAP.57.06JF03

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