研究者詳細 - 石川　健治

論文 - 石川　健治

分割表示 365 件中 141 - 160 件目／全件表示 >>

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development 査読有り

Iwase, T; Kamaji, Y; Kang, SY; Koga, K; Kuboi, N; Nakamura, M; Negishi, N; Nozaki, T; Nunomura, S; Ogawa, D; Omura, M; Shimizu, T; Shinoda, K; Sonoda, Y; Suzuki, H; Takahashi, K; Tsutsumi, T; Yoshikawa, K; Ishijima, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SE ) 2019年6月

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Semiconductor device production has grown year on year, with high-volume manufacturing supported by advances in plasma processes. In plasma-based processing, ions and reactive species synergistically enhance chemical reactions, whose kinetics is in a nonequilibrium state in the region of the surface subjected to ion bombardment. To control such processing, methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required. Here, we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes in regard to intelligent process-control. We also address the challenges of implementing "virtual product development" utilizing information technology.

DOI： 10.7567/1347-4065/ab163b

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation 査読有り

Iwase, T; Kamaji, Y; Kang, SY; Koga, K; Kuboi, N; Nakamura, M; Negishi, N; Nozaki, T; Nunomura, S; Ogawa, D; Omura, M; Shimizu, T; Shinoda, K; Sonoda, Y; Suzuki, H; Takahashi, K; Tsutsumi, T; Yoshikawa, K; Ishijima, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SE ) 2019年6月

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.

DOI： 10.7567/1347-4065/ab1638

Electronic properties and primarily dissociation channels of fluoroethane compounds 査読有り

Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SE ) 2019年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Electronic properties of fluoroethane compounds except C2H5F, C2H4F2, CH3CF3, C2H2F4, and C2F6 have not been reported. On the other hands, the physicochemical properties were reported for the usage as the alternative refrigerants. Dissociation channels in the process plasma for fluoroethane compounds were not fully discussed except 1,1,1,2-C2H2F4. Therefore we have investigated the electronic properties and primarily dissociation channels of fluoroethane compounds in the process plasma in semiconductor manufacturing, using computational chemistry. Positive and negative ionized states were investigated by density functional method and the excited states were investigated by EOMCCSD/aug-cc-pVDZ and TD-SCF CAM-B3LYP/aug-cc-pVDZ. It was generally shown through these investigations that C-C bond scission occurred by excitation and ionization and C-F bond scission occurred by excitation and electron attachment.

DOI： 10.7567/1347-4065/ab09ca

Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas 査読有り国際共著

Zhang, Y; Ishikawa, K; Mozetic, M; Tsutsumi, T; Kondo, H; Sekine, M; Hori, M

PLASMA PROCESSES AND POLYMERS 16 巻 ( 6 ) 2019年6月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Plasma Processes and Polymers

Polyethylene terephthalate (PET) are exposed either by VUV photons emitted from oxygen or hydrogen plasmas or by VUV photons and neutral active species from both plasmas. The water contact angle (WCA) of PET surface increased after treatment with H2 VUV + H atoms, due to the cleavage of the oxygen-containing groups by VUV photons. The WCA decreased for the case of treatment with O2 VUV + O-related neutral active species, leading to be released the polar groups like −COH or −COOH from the PET surface with a depth of less than about 10 nm. Oxygen-related neutrals etched the PET film and generated a rough surface which also contributed to the decrease in WCA however no bulk chemical structure obviously changed.

DOI： 10.1002/ppap.201800175

Laser-drilling formation of through-glass-via (TGV) on polymer-laminated glass 査読有り

Sato, Y; Imajyo, N; Ishikawa, K; Tummala, R; Hori, M

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30 巻 ( 11 ) 頁： 10183 - 10190 2019年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Materials Science: Materials in Electronics

A three-dimensional (3D) glass integrated passive device (IPD) is an evolutionally advanced configuration to dramatically reduce the electronics form factor and manufacturing cost of current IPDs by introducing ultra-thin glass with through-glass-vias (TGVs). A defect-free TGV formation technology in polymer-laminated glass substrates is required to realize a highly reliable 3D glass IPD. This paper discusses mechanisms of each defect formation in the use of several types of lasers to explore suitable technology for defect-free drilling in polymer-laminated glass.

DOI： 10.1007/s10854-019-01354-5

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition 査読有り

Isobe, Y; Sakai, T; Sugiyama, N; Mizushima, I; Suguro, K; Miyashita, N; Lu, Y; Wilson, AF; Kumar, DA; Ikarashi, N; Kondo, H; Ishikawa, K; Shimizu, N; Oda, O; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 37 巻 ( 3 ) 2019年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on the growth is crucial for realizing high crystal quality of grown GaN films, owing to the suppression of plasma-induced damage and decomposition of gallium precursors in the gaseous phase. By confined plasma in the discharge region using the plasma shield plates made of metal with multiple small holes effectively, GaN with a relatively flat surface was grown under conditions of higher V/III ratios. Epitaxial growth of GaN films was achieved by modifying the plate design and controlling the high V/III ratio using both the plasma-excitation power and the Ga precursor flow rate.

DOI： 10.1116/1.5083970

Erratum to “Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance” (Micro and Nano Engineering (2019) 3 (1–6), (S2590007219300097), (10.1016/j.mne.2019.02.005)) 査読有り Open Access

Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

Micro and Nano Engineering 3 巻頁： 92 - 92 2019年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Micro and Nano Engineering

The publisher regrets that we missed to publish the conflict of interest statement in the original article. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. The publisher would like to apologise for any inconvenience caused.

DOI： 10.1016/j.mne.2019.05.004

Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance 査読有り Open Access

Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

Micro and Nano Engineering 3 巻頁： 1 - 6 2019年5月

担当区分：責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Micro and Nano Engineering

The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k < 2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam curing. The high carbon concentration in the SiOC films with di-methyl bonds ([dbnd]Si(–]CH3)2) is crucial for resistance to plasma-induced damage (PID) and prevention of moisture uptake after the plasma treatment. The mix of di-methyl bonds is believed to be the key to protecting the films from PID because the films retain their hydrophobic characteristics even after plasma treatment. Thus, control of the ratio of di-methyl bonds to mono-methyl bonds ([tbnd]Si–]CH3) in the as-deposited SiOC film is necessary. Selection of trimethyl silane as a precursor for film matrix formation resulted in excellent control of this ratio to obtain highly reliable low-k/Cu interconnects for high-performance logic devices.

DOI： 10.1016/j.mne.2019.02.005

Facile synthesis of SnO<sub>2</sub>-graphene composites employing nonthermal plasma and SnO<sub>2</sub> nanoparticles-dispersed ethanol 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 17 ) 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D: Applied Physics

The tin oxide (SnO 2 )-graphene composite was synthesized by the in-liquid plasma method using SnO 2 nanoparticles (average diameter ∼30 nm) dispersed ethanol as a precursor without providing external heat. As observed from scanning electron microscopy (SEM) and transmission electron microscopy (TEM), the SnO 2 nanoparticles were distributed uniformly on flaky graphene sheets. The formation of SnO 2 and high crystalline graphene was supported by the Raman analysis and x-ray diffraction (XRD) studies. A facile, low-cost method operating at atmospheric pressure based on the in-liquid plasma technology can be utilized to fabricate SnO 2 -graphene composite using minimum precursors for future applications such as gas sensing devices and fuel cells.

DOI： 10.1088/1361-6463/ab03c4

Systematic diagnostics of the electrical, optical, and physicochemical characteristics of low-temperature atmospheric-pressure helium plasma sources 査読有り

Takeda, K; Yamada, H; Ishikawa, K; Sakakita, H; Kim, J; Ueda, M; Ikeda, J; Akimoto, Y; Kataoka, Y; Yokoyama, N; Ikehara, Y; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 16 ) 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D: Applied Physics

The performance characteristics of two plasma sources, based on different types of discharge, were assessed. Three primary aspects of these sources were examined. These were electrical parameters (voltage and current flowing through a target), plasma parameters (gas temperature and electron density, determined using optical emission spectroscopy), and levels of gas-phase oxygen atoms (measured by vacuum ultraviolet absorption spectroscopy) and liquid-phase ▪OH radicals (generated by plasma treatment of water and detected using an electron spin resonance spin-trapping technique). As a result, there were few significant differences such as electron density, oxygen atom density, and gas temperature between the two plasma sources. However, the time-averaged electrical currents flowing to the target and the amount of liquid-phase ▪OH radicals showed a large difference, especially when the plume made contact with the target. Thus, many points of similarity but some differences in the two devices were found by the benchmarking study. These shall contribute to our understanding of the mechanisms for each consequence in medical applications.

DOI： 10.1088/1361-6463/aaff44

A 65-nm CMOS Fully Integrated Analysis Platform Using an On-Chip Vector Network Analyzer and a Transmission-Line-Based Detection Window for Analyzing Circulating Tumor Cell and Exosome 査読有り Open Access

Niitsu, K; Nakanishi, T; Murakami, S; Matsunaga, M; Kobayashi, A; Karim, NM; Ito, J; Ozawa, N; Hase, T; Tanaka, H; Sato, M; Kondo, H; Ishikawa, K; Odaka, H; Hasegawa, Y; Hori, M; Nakazato, K

IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 13 巻 ( 2 ) 頁： 470 - 479 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IEEE Transactions on Biomedical Circuits and Systems

A fully integrated CMOS circuit based on a vector network analyzer and a transmission-line-based detection window for circulating tumor cell (CTC) and exosome analysis is presented for the first time. We have introduced a fully integrated architecture, which eliminates the undesired parasitic components and enables high-sensitivity, to analyze extremely low-concentration CTC in blood. The detection window was designed on the high-sensitive coplanar waveguide line. To validate the operation of the proposed system, a test chip was fabricated using 65-nm CMOS technology. Measurements were performed after adding a tiny lump of silicone or a droplet of water on its detection window. The measured results show S-21 degradation of-1.96 dB and-6.04 dB for the silicone and the droplet, respectively, at 1.4 GHz. In addition, in another measurement using magnetic beads, it is confirmed that the proposed circuit can analyze even low concentrations of 20 beads/μL. As well as microbeads, measurement with CTCs was successfully demonstrated.

DOI： 10.1109/TBCAS.2018.2882472

Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls 査読有り

Imai, S; Naito, K; Kondo, H; Cho, HJ; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 10 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D: Applied Physics

For polymer electrolyte fuel cell applications, effects of Pt-nanoparticle-supported 3D carbon nanostructures, i.e. carbon nanowalls (Pt/CNWs), on electrochemical characteristics were determined by alternating current impedance analysis of resistive elements, which contribute to the oxygen reduction reaction. CNWs were fabricated by radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD), and Pt catalysts were formed on the template of CNWs by supercritical fluid metalorganic chemical fluid deposition. CNWs of different wall densities were synthesized during RI-PECVD by varying the deposition pressure. The resistive elements can be consisted of three regions with different corresponding frequencies, and the resistive elements of mass diffusion, which showed up in the lowest frequency region of less than 100 Hz, increased as the wall density of CNWs increased. It was found that the wall density of CNWs was one of the essential parameters of Pt/CNWs for the electrochemical reaction involving the fluid flow and the mass transfer of active materials.

DOI： 10.1088/1361-6463/aaf8e0

Control of sp<SUP>2</SUP>-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH<sub>4</sub>/H<sub>2</sub> plasma-enhanced chemical vapor deposition 査読有り

Sugiura, H; Jia, LY; Ohashi, Y; Kondo, H; Ishikawa, K; Tsutsumi, T; Hayashi, T; Takeda, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 3 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Amorphous carbon (a-C) thin films were deposited under the control of C2 radical density using radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) with CH4/H2 plasma. By actinometric monitoring of C2 emission intensities, the plasma parameters were precisely controlled by changing in CH4-containing plasma excitation power independent of H2 plasma excitation. The control of the incorporation of sp2-C clusters in the a-C films during the a-C film depositions is demonstrated by tailoring Raman positions vs. full widths at half maxima for the G band around 1580 cm-1 to the RI-PECVD parameters.

DOI： 10.7567/1347-4065/aafd49

Effects of BCl<sub>3</sub> addition to Cl<sub>2</sub> gas on etching characteristics of GaN at high temperature 査読有り

Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kohno, M; Kinose, K; Nadahara, S; Ishikawa, K; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 37 巻 ( 2 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2-BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas addition into the Cl2 plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 °C.

DOI： 10.1116/1.5082345

Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition 査読有り

Sugiura, H; Kondo, H; Tsutsumi, T; Ishikawa, K; Hori, M

C-JOURNAL OF CARBON RESEARCH 5 巻 ( 1 ) 2019年3月

Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition 査読有り

Tomatsu, M; Hiramatsu, M; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

C-JOURNAL OF CARBON RESEARCH 5 巻 ( 1 ) 2019年3月

Non-thermal plasma-activated medium modified metabolomic profiles in the glycolysis of U251SP glioblastoma 査読有り

Kurake, N; Ishikawa, K; Tanaka, H; Hashizume, H; Nakamura, K; Kajiyama, H; Toyokuni, S; Kikkawa, F; Mizuno, M; Hori, M

ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS 662 巻頁： 83 - 92 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Archives of Biochemistry and Biophysics

Non-equilibrium atmospheric pressure plasma (NEAPP) is a mixture of radicals, electrons, anions, cations and light at near body temperature. Plasma-activated medium (PAM) is realized using NEAPP provided by engineered devices and irradiated to a cell culture medium for a period of 600 s. Glioblastoma cells U251SP cultivated in PAM previously indicated that antitumor effects induced PAM-specific apoptotic cell-death. Metabolomic profiles of a hundred intracellular metabolites were analyzed using capillary electrophoresis mass spectrometry. The metabolomic profiles of the PAM-treated U251SP cells were changed significantly with inhibition of the glycolysis pathway and with enhancement of the pentose phosphate pathway.

DOI： 10.1016/j.abb.2018.12.001

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF<sub>6</sub>-added plasma etching of quartz glass 査読有り

Nguyen, TTN; Sasaki, M; Odaka, H; Tsutsumi, T; Ishikawa, K; Hori, M

JOURNAL OF APPLIED PHYSICS 125 巻 ( 6 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

High-density and large-volume atmospheric pressure plasma can be extended remotely by placing a long floating wire inside an Ar-gas flowing quartz tube connected with an inductively coupled coil. The discharge quartz tubes were categorized into three I-shaped tubes and one L-shaped tube. The influence of the geometrical design on plasma properties was investigated. Using the floating wire-assisted L tube, an electron density of 10 14 cm -3 and a gas temperature less than 850 K were obtained at the downstream remote region. That is where the Ar plasma plume blew out from the slit at the bottom of the floating wire-assisted L tube at a distance of 140 mm from the coil center, when 100 W of a very high-frequency power (100 MHz) was applied to the inductively coupled coil. The applicability of this new L-type plasma source for large-area glass etching with a high etch rate was explored. At the remote region where the Ar plasma plume blew out of the slit of the L tube, SF 6 gas was added for etching a quartz glass plate. Glass etching could be obtained over a large area of 15 mm × 20 mm with a maximum etch rate of 2 μm/min and a volume etch rate of 0.3 mm 3 /min.

DOI： 10.1063/1.5081875

Liquid dynamics in response to an impinging low-temperature plasma jet 査読有り国際共著

Brubaker, TR; Ishikawa, K; Kondo, H; Tsutsumi, T; Hashizume, H; Tanaka, H; Knecht, SD; Bilén, SG; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 7 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D: Applied Physics

The liquid-phase behavior induced by an atmospheric pressure plasma jet impinging onto water-based solutions was experimentally investigated. An increase in cavity size and circulation size resulting from an increase in impact force of the plasma jet with respect to a helium gas jet were observed through particle image velocimetry and cavity measurements. The increase in circulation size due to plasma discharge was larger than the increase solely due to an increase in jet impact force, suggesting additional shear along the liquid free surface evidenced by schlieren images of plasma-induced gas flow adherence after impingement. Liquid evaporation rate increased and mean liquid temperature decreased due to plasma effects on jet behavior. Plasma-induced decreases in liquid pH and temperature were contained within the circulation flow, leading to strong pH and temperature gradients within the liquid volume. Areas treated by the jet became acidic and remained more acidic than other portions of the liquid due to circulation vortices, highlighting the consequences of jet and liquid vessel parameters for plasma jet-liquid applications.

DOI： 10.1088/1361-6463/aaf460

Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds 査読有り

Ichikawa, T; Tanaka, S; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Carbon nanowalls (CNWs) were synthesized by radical injection plasma-enhanced chemical vapor deposition and used as scaffolds for cell culture. The proliferation of osteoblast-like cells (Saos-2) was enhanced on the CNW scaffold upon electrical stimulation (ES) with 10 Hz square pulses at a current of 226 nA. However, after incubation with ES for 10 d, differentiation of the cells toward bone formation was suppressed.

DOI： 10.7567/1882-0786/aaf469

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