論文 - 石川　健治

プラズマ活性化乳酸リンゲル点滴 (PAL) によるイネ幼苗の成長促進効果 査読有り

橋爪 博司, 北野 英己, 水野 寛子, 湯浅 元気, 東野 里江, 田中 宏昌, 石川 健治, 松本 省吾, 榊原 均, 仁川 進, 前島 正義, 水野 正明, 堀 勝

応用物理学会学術講演会講演予稿集   2019.2 巻 ( 0 ) 頁： 1895 - 1895   2019年9月

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記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2019.2.0_1895

CiNii Research

CH₃Fの電子物性と解離 査読有り

林 俊雄, 石川 健治, 関根 誠, 堀 勝

応用物理学会学術講演会講演予稿集   2019.2 巻 ( 0 ) 頁： 1837 - 1837   2019年9月

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記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2019.2.0_1837

CiNii Research

イネ圃場における定期的な低温プラズマ処理による生育や収穫に対する検討 (II) 査読有り

橋爪 博司, 北野 英己, 水野 寛子, 湯浅 元気, 東野 里江, 田中 宏昌, 石川 健治, 松本 省吾, 榊原 均, 仁川 進, 前島 正義, 水野 正明, 堀 勝

応用物理学会学術講演会講演予稿集   2019.2 巻 ( 0 ) 頁： 1896 - 1896   2019年9月

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記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2019.2.0_1896

CiNii Research

プラズマ処理によるイチゴ果実中の抗酸化物質量増加 査読有り

橋爪 博司, 坪田 憲紀, 松本 省吾, 伊藤 昌文, 湯浅 元気, 東野 里江, 田中 宏昌, 石川 健治, 北野 英己, 榊原 均, 仁川 進, 前島 正義, 水野 正明, 大熊 隆之, 堀 勝

応用物理学会学術講演会講演予稿集   2019.2 巻 ( 0 ) 頁： 1897 - 1897   2019年9月

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記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2019.2.0_1897

CiNii Research

Atmospheric Pressure Plasma-Treated Carbon Nanowalls' Surface-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (CNW-SALDI-MS) 査読有り

Ohta, T; Ito, H; Ishikawa, K; Kondo, H; Hiramatsu, M; Hori, M

C-JOURNAL OF CARBON RESEARCH   5 巻 ( 3 )   2019年9月

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記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： 10.3390/c5030040

Web of Science

Self-limiting reactions of ammonium salt in CHF₃/O₂ downstream plasma for thermal-cyclic atomic layer etching of silicon nitride 査読有り

Shinoda, K; Miyoshi, N; Kobayashi, H; Izawa, M; Saeki, T; Ishikawa, K; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   37 巻 ( 5 )   2019年9月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films  

Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma were demonstrated for thermal-cyclic atomic layer etching (ALE) of Si3N4. In situ x-ray photoelectron spectroscopy analysis shows that an (NH4)2SiF6 by-product of the same thickness forms on Si3N4 in a wide gas composition range. The (NH4)2SiF6 layer prevents etching of Si3N4 during continuous plasma exposure in that wide range. The (NH4)2SiF6 layer was sublimated by heating, which was consistent with the result of the thermodynamic calculation. The reactions of the (NH4)2SiF6 layer in CHF3/O2 downstream plasma are used for thermal-cyclic ALE of Si3N4 with a newly developed 300-mm tool equipped with an in situ ellipsometer. It was confirmed that the amount etched per cycle saturates with respect to both plasma exposure time and infrared irradiation time.

DOI： 10.1116/1.5111663

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Scopus

Review of methods for the mitigation of plasma-induced damage to low-dielectric-constant interlayer dielectrics used for semiconductor logic device interconnects 査読有り

Miyajima, H; Ishikawa, K; Sekine, M; Hori, M

PLASMA PROCESSES AND POLYMERS   16 巻 ( 9 )   2019年9月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Plasma Processes and Polymers  

The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma-induced damage to low-dielectric-constant (low-k) materials, including fluorosilicate glass and carbon-doped silicon oxide is reviewed. The chemical bond structures of low-k materials are summarized to help mitigate the k value degradation caused by moisture uptake after plasma processes. Damage suppression is accomplished by integrating deposition chemistries, pattern etch transfer, and post-etch cleaning technologies. On the basis of analyses results, a discussion on the bond engineering of low-k materials and their degradation during plasma processing is given. Challenges facing low-k interconnect technology are also addressed.

DOI： 10.1002/ppap.201900039

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Scopus

Simultaneous achievement of antimicrobial property and plant growth promotion using plasma-activated benzoic compound solution 査読有り

Iwata, N; Gamaleev, V; Hashizume, H; Oh, JS; Ohta, T; Ishikawa, K; Hori, M; Ito, M

PLASMA PROCESSES AND POLYMERS   16 巻 ( 8 )   2019年8月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Plasma Processes and Polymers  

This study assesses a potential use of the recently developed nonthermal atmospheric pressure plasma technology in hydroponic plant cultivation. Two types of plasma-activated liquid solutions were compared, namely, l-Phenylalanine (l-Phe), which had a benzene ring structure, and l-Alanine (l-Ala), which did not have a benzene ring structure. Antimicrobial property and plant growth enhancement were simultaneously obtained when plasma-activated l-Phe was used. We found that the benzene ring structure in solution contributed to antimicrobial property. Further, colony forming unit assay indicated that 99% of Escherichia coli (E. coli) were eliminated after 24-h incubation and radish sprout growth increased by about 40% after 2 days of cultivation.

DOI： 10.1002/ppap.201900023

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Gene Expression of Osteoblast-like Cells on Carbon-Nanowall as Scaffolds during Incubation with Electrical Stimulation 査読有り

Ichikawa, T; Kondo, H; Ishikawa, K; Tsutsumi, T; Tanaka, H; Sekine, M; Hori, M

ACS APPLIED BIO MATERIALS   2 巻 ( 7 ) 頁： 2698 - 2702   2019年7月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：ACS Applied Bio Materials  

Nanostructured cell-culture scaffolds of carbon nanowalls (CNWs) were prepared by changing average wall-to-wall distances either 132 or 220 nm. Osteoblast-like cells (Saos-2) proliferated during 4 day incubation on the wider (220 nm) CNW scaffolds in the presence of electrical stimulation (ES). Differentiation gene expression levels of Runt-related transcription factor 2 (Runx2) and osteocalcin (OC) were suppressed after 10 day incubation, which indicated that the average wall-to-wall distances of the CNW scaffolds affect suppression of Runx2 and OC gene expression. This technique holds promise for controlling the differentiation of osteoblast-like cells.

DOI： 10.1021/acsabm.9b00178

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PubMed

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective 査読有り

Ishikawa, K; Ishijima, T; Shirafuji, T; Armini, S; Despiau-Pujo, E; Gottscho, RA; Kanarik, KJ; Leusink, GJ; Marchack, N; Murayama, T; Morikawa, Y; Oehrlein, GS; Park, S; Hayashi, H; Kinoshita, K

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SE )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utilization of synergistic enhancement of etching or deposition. The discussion encompasses major challenges in the plasma science and technology community. The focus of the review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.

DOI： 10.7567/1347-4065/ab163e

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Scopus

Plasma-activated solution alters the morphological dynamics of supported lipid bilayers observed by high-speed atomic force microscopy 査読有り

Yamaoka, S; Kondo, H; Hashizume, H; Ishikawa, K; Tanaka, H; Hori, M

APPLIED PHYSICS EXPRESS   12 巻 ( 6 )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Applied Physics Express  

The effects of plasma-activated Ringer's lactate solution (PAL) on supported lipid bilayers (SLBs) as a cell membrane model were investigated. PAL has selective killing effects on cancer cells. High-speed atomic force microscopy revealed alterations in the morphological dynamics of SLBs in PAL. SLB islands decreased approximately 20-fold faster in the presence of PAL compared to Ringer's lactate solution without plasma treatment. The effect of plasma treatment on the Ringer's lactate solution produced PAL components that account for the observed effects on cell membranes, such as removal of lipid molecules from the edges of SLBs and the following SLBs shrinkage.

DOI： 10.7567/1882-0786/ab1a58

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Scopus

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? 査読有り

Iwase, T; Kamaji, Y; Kang, SY; Koga, K; Kuboi, N; Nakamura, M; Negishi, N; Nozaki, T; Nunomura, S; Ogawa, D; Omura, M; Shimizu, T; Shinoda, K; Sonoda, Y; Suzuki, H; Takahashi, K; Tsutsumi, T; Yoshikawa, K; Ishijima, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SE )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

The non-thermal nature of chemical reactions in plasma chemistry is considered to be suitable for next-generation energy production from plasma-material syntheses and renewable sources. As emerging multidisciplinary applications, plasma medicine and plasma agriculture are currently topical applications that make use of atmospheric pressure plasmas. Here, we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to atmospheric pressure plasma technologies as well as material synthesis and thin-film deposition. In this review, selected breakthroughs are reviewed. Finally, near-future major challenges are addressed to encourage new multidisciplinary research across the plasma science and technology community.

DOI： 10.7567/1347-4065/ab163a

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Scopus

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development 査読有り

Iwase, T; Kamaji, Y; Kang, SY; Koga, K; Kuboi, N; Nakamura, M; Negishi, N; Nozaki, T; Nunomura, S; Ogawa, D; Omura, M; Shimizu, T; Shinoda, K; Sonoda, Y; Suzuki, H; Takahashi, K; Tsutsumi, T; Yoshikawa, K; Ishijima, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SE )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

Semiconductor device production has grown year on year, with high-volume manufacturing supported by advances in plasma processes. In plasma-based processing, ions and reactive species synergistically enhance chemical reactions, whose kinetics is in a nonequilibrium state in the region of the surface subjected to ion bombardment. To control such processing, methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required. Here, we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes in regard to intelligent process-control. We also address the challenges of implementing "virtual product development" utilizing information technology.

DOI： 10.7567/1347-4065/ab163b

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Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation 査読有り

Iwase, T; Kamaji, Y; Kang, SY; Koga, K; Kuboi, N; Nakamura, M; Negishi, N; Nozaki, T; Nunomura, S; Ogawa, D; Omura, M; Shimizu, T; Shinoda, K; Sonoda, Y; Suzuki, H; Takahashi, K; Tsutsumi, T; Yoshikawa, K; Ishijima, T; Ishikawa, K

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SE )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

Dramatic advances are being made in dry processing technologies. Atomic scale precision below 10 nm is now possible with fine patterning technologies for high-volume manufacturing of semiconductor devices. The isotropic and anisotropic nature of both film deposition and etching is versatile for nanoscale fabrication of three-dimensional features, such as high-aspect-ratio (HAR) features. Here we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes with regard to fine pattern transfer, HAR feature formation, and multiple patterning as lithographic techniques. Finally, we address the major challenges shared across the plasma science and technology community.

DOI： 10.7567/1347-4065/ab1638

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Electronic properties and primarily dissociation channels of fluoroethane compounds 査読有り

Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( SE )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

Electronic properties of fluoroethane compounds except C2H5F, C2H4F2, CH3CF3, C2H2F4, and C2F6 have not been reported. On the other hands, the physicochemical properties were reported for the usage as the alternative refrigerants. Dissociation channels in the process plasma for fluoroethane compounds were not fully discussed except 1,1,1,2-C2H2F4. Therefore we have investigated the electronic properties and primarily dissociation channels of fluoroethane compounds in the process plasma in semiconductor manufacturing, using computational chemistry. Positive and negative ionized states were investigated by density functional method and the excited states were investigated by EOMCCSD/aug-cc-pVDZ and TD-SCF CAM-B3LYP/aug-cc-pVDZ. It was generally shown through these investigations that C-C bond scission occurred by excitation and ionization and C-F bond scission occurred by excitation and electron attachment.

DOI： 10.7567/1347-4065/ab09ca

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Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas 査読有り

Zhang, Y; Ishikawa, K; Mozetic, M; Tsutsumi, T; Kondo, H; Sekine, M; Hori, M

PLASMA PROCESSES AND POLYMERS   16 巻 ( 6 )   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Plasma Processes and Polymers  

Polyethylene terephthalate (PET) are exposed either by VUV photons emitted from oxygen or hydrogen plasmas or by VUV photons and neutral active species from both plasmas. The water contact angle (WCA) of PET surface increased after treatment with H2 VUV + H atoms, due to the cleavage of the oxygen-containing groups by VUV photons. The WCA decreased for the case of treatment with O2 VUV + O-related neutral active species, leading to be released the polar groups like −COH or −COOH from the PET surface with a depth of less than about 10 nm. Oxygen-related neutrals etched the PET film and generated a rough surface which also contributed to the decrease in WCA however no bulk chemical structure obviously changed.

DOI： 10.1002/ppap.201800175

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Laser-drilling formation of through-glass-via (TGV) on polymer-laminated glass 査読有り

Sato, Y; Imajyo, N; Ishikawa, K; Tummala, R; Hori, M

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   30 巻 ( 11 ) 頁： 10183 - 10190   2019年6月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Materials Science: Materials in Electronics  

A three-dimensional (3D) glass integrated passive device (IPD) is an evolutionally advanced configuration to dramatically reduce the electronics form factor and manufacturing cost of current IPDs by introducing ultra-thin glass with through-glass-vias (TGVs). A defect-free TGV formation technology in polymer-laminated glass substrates is required to realize a highly reliable 3D glass IPD. This paper discusses mechanisms of each defect formation in the use of several types of lasers to explore suitable technology for defect-free drilling in polymer-laminated glass.

DOI： 10.1007/s10854-019-01354-5

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Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition 査読有り

Isobe, Y; Sakai, T; Sugiyama, N; Mizushima, I; Suguro, K; Miyashita, N; Lu, Y; Wilson, AF; Kumar, DA; Ikarashi, N; Kondo, H; Ishikawa, K; Shimizu, N; Oda, O; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   37 巻 ( 3 )   2019年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics  

Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on the growth is crucial for realizing high crystal quality of grown GaN films, owing to the suppression of plasma-induced damage and decomposition of gallium precursors in the gaseous phase. By confined plasma in the discharge region using the plasma shield plates made of metal with multiple small holes effectively, GaN with a relatively flat surface was grown under conditions of higher V/III ratios. Epitaxial growth of GaN films was achieved by modifying the plate design and controlling the high V/III ratio using both the plasma-excitation power and the Ga precursor flow rate.

DOI： 10.1116/1.5083970

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Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance (vol 3, pg 1, 2019) 査読有り

Miyajima, H; Masuda, H; Watanabe, K; Ishikawa, K; Sekine, M; Hori, M

MICRO AND NANO ENGINEERING   3 巻   頁： 92 - 92   2019年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Micro and Nano Engineering  

The publisher regrets that we missed to publish the conflict of interest statement in the original article. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. The publisher would like to apologise for any inconvenience caused.

DOI： 10.1016/j.mne.2019.05.004

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Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance 査読有り

Miyajima, H; Masuda, H; Watanabe, K; Ishikawa, K; Sekine, M; Hori, M

MICRO AND NANO ENGINEERING   3 巻   頁： 1 - 6   2019年5月

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記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Micro and Nano Engineering  

The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k < 2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam curing. The high carbon concentration in the SiOC films with di-methyl bonds ([dbnd]Si(–]CH3)2) is crucial for resistance to plasma-induced damage (PID) and prevention of moisture uptake after the plasma treatment. The mix of di-methyl bonds is believed to be the key to protecting the films from PID because the films retain their hydrophobic characteristics even after plasma treatment. Thus, control of the ratio of di-methyl bonds to mono-methyl bonds ([tbnd]Si–]CH3) in the as-deposited SiOC film is necessary. Selection of trimethyl silane as a precursor for film matrix formation resulted in excellent control of this ratio to obtain highly reliable low-k/Cu interconnects for high-performance logic devices.

DOI： 10.1016/j.mne.2019.02.005

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