研究者詳細 - 石川　健治

論文 - 石川　健治

分割表示 382 件中 221 - 240 件目／全件表示 >>

Intracellular responses to reactive oxygen and nitrogen species, and lipid peroxidation in apoptotic cells cultivated in plasma-activated medium 査読有り

Furuta, R; Kurake, N; Ishikawa, K; Takeda, K; Hashizume, H; Tanaka, H; Kondo, H; Sekine, M; Hori, M

PLASMA PROCESSES AND POLYMERS 14 巻 ( 11 ) 2017年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Plasma Processes and Polymers

A mechanism of the cytotoxicity of plasma-activated medium (PAM) is revealed by examining the intracellular effects of reactive oxygen nitrogen species (RONS) and lipid oxidation. PAM is cell culture medium activated by irradiation using non-equilibrium atmospheric-pressure plasma using pure Ar gas in ambient air. Extracellular RONS in PAM induced the apoptotic death of HeLa cells. Temporal changes in intracellular RONS, such as ONOO<sup>−</sup>, NO, and (Formula presented.), were analyzed. Intracellular RONS generation in HeLa cells following incubation in PAM triggered activation of the caspase cascade pathway and lipid peroxidation of intracellular membranes to induce apoptosis.

DOI： 10.1002/ppap.201700123

Surface roughening of photoresist after change of the photon/radical and ion treatment sequence 査読有り

Zhang, Y; Takeuchi, T; Ishikawa, K; Takeda, K; Kondo, H; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 35 巻 ( 6 ) 2017年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Vacuum Science and Technology A Vacuum Surfaces and Films

The formation of surface roughness during ion irradiation was suppressed by photon/radical pretreatment of a photoresist with HBr or H<inf>2</inf> plasmas. The opposite sequence of treatment after ion irradiation enhanced the surface roughness. The enhancement of roughness after post-treatment was not correlated with a decrease in the film thickness, reactions of Br radicals at the surface, or with the presence of the amorphous carbon-like layer generated by ion irradiation because similar modification was observed for the pretreatment. Fourier transform infrared spectroscopy analysis revealed that the intensities of peaks originated from the C=O absorption of methacrylic acid and methacrylate groups were decreased by irradiation with vacuum ultraviolet light at wavelengths in the range between 115 and 170 nm emitted from HBr or H<inf>2</inf> plasmas. The removal of the C=O groups possibly generated dangling bonds and induced crosslinking reactions of the photoresist polymers. The nonuniformity of crosslinking reactions on the roughened photoresist intensively increased the surface roughness.

DOI： 10.1116/1.4994218

最先端プラズマバイオ技術招待有り査読有り Open Access

堀勝，石川健治，近藤隆，田中宏昌，橋爪博司

放射線化学頁： 3 - 14 2017年10月

Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma 査読有り

Kurake, N; Tanaka, H; Ishikawa, K; Nakamura, K; Kajiyama, H; Kikkawa, F; Mizuno, M; Ikehara, Y; Hori, M

JOURNAL OF APPLIED PHYSICS 122 巻 ( 14 ) 2017年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

Oxalate was synthesized in the glucose solution by irradiation with non-equilibrium atmospheric pressure plasma (NEAPP), in which the NEAPP plume contacted the solution surface, via the generation of several intermediate organic products such as gluconic acid. A thermodynamically unstable phase of calcium oxalate dihydrate crystallized rapidly during incubation of a NEAPP-irradiated glucose solution that contained calcium ions and was buffered at neutral pH. Longer irradiation times increased the growth rate and the number of seed crystals.

DOI： 10.1063/1.5006598

High-durability catalytic electrode composed of Pt nanoparticle-supported carbon nanowalls synthesized by radical-injection plasma-enhanced chemical vapor deposition 査読有り

Imai, S; Kondo, H; Cho, H; Kano, H; Ishikawa, K; Sekine, M; Hiramatsu, M; Ito, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 巻 ( 40 ) 2017年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

For polymer electrolyte fuel cell applications, carbon nanowalls (CNWs) were synthesized by radical-injection plasma-enhanced chemical vapor deposition, and a high density of Pt nanoparticles (>10<sup>12</sup> cm<sup>-2</sup>) was supported on the CNWs using a supercritical fluid deposition system. The high potential cycle tests were applied and the electrochemical surface area of the Pt nanoparticle-supported CNWs did not change significantly, even after 20 000 high potential cycles. According to transmission electron microscopy observations, the mean diameter of Pt changed slightly after the cycle tests, while the crystallinity of the CNWs evaluated using Raman spectroscopy showed almost no change.

DOI： 10.1088/1361-6463/aa8131

Cold atmospheric helium plasma causes synergistic enhancement in cell death with hyperthermia and an additive enhancement with radiation 査読有り Open Access

Moniruzzaman, R; Rehman, MU; Zhao, QL; Jawaid, P; Takeda, K; Ishikawa, K; Hori, M; Tomihara, K; Noguchi, K; Kondo, T; Noguchi, M

SCIENTIFIC REPORTS 7 巻 ( 1 ) 頁： 11659 2017年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Scientific Reports

Cold atmospheric plasmas (CAPs) have been proposed as a novel therapeutic method for its anti-cancer potential. However, its biological effects in combination with other physical modalities remain elusive. Therefore, this study examined the effects of cold atmospheric helium plasma (He-CAP) in combination with hyperthermia (HT) 42 °C or radiation 5 Gy. Synergistic enhancement in the cell death with HT and an additive enhancement with radiation were observed following He-CAP treatment. The synergistic effects were accompanied by increased intracellular reactive oxygen species (ROS) production. Hydrogen peroxide (H<inf>2</inf>O<inf>2</inf>) and superoxide (O<inf>2</inf> <sup>•-</sup>) generation was increased immediately after He-CAP treatment, but fails to initiate cell death process. Interestingly, at late hour's He-CAP-induced O<inf>2</inf> <sup>•-</sup> generation subsides, however the combined treatment showed sustained increased intracellular O<inf>2</inf> <sup>•-</sup> level, and enhanced cell death than either treatment alone. He-CAP caused marked induction of ROS in the aqueous medium, but He-CAP-induced ROS seems insufficient or not completely incorporated intra-cellularly to activate cell death machinery. The observed synergistic effects were due to the HT effects on membrane fluidity which facilitate the incorporation of He-CAP-induced ROS into the cells, thus results in the enhanced cancer cell death following combined treatment. These findings would be helpful when establishing a therapeutic strategy for CAP in combination with HT or radiation.

DOI： 10.1038/s41598-017-11877-8

Lipid droplets exhaustion with caspases activation in HeLa cells cultured in plasma-activated medium observed by multiplex coherent anti-Stokes Raman scattering microscopy 査読有り

Furuta, R; Kurake, N; Takeda, K; Ishikawa, K; Ohta, T; Ito, M; Hashizume, H; Tanaka, H; Kondo, H; Sekine, M; Hori, M

BIOINTERPHASES 12 巻 ( 3 ) 頁： 031006 2017年9月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Biointerphases

The multiplex coherent anti-Stokes Raman scattering microscopy allowed label-free visualization of cytoplasmic lipid droplets (LDs). The LDs, which act to conserve energy storage, are usually accumulated during the normal apoptosis of HeLa cells with activation of caspase-3/7 leading to downregulation of the fatty acid catabolism pathways. During cultivating in nonthermal plasmaactivated medium (PAM), while the activation of caspase-3/7 was induced, the authors found that a dynamic exhaustion of the intracellular LDs, underlying the metabolic mechanism of the PAMinduced apoptotic cell death of HeLa cells.

DOI： 10.1116/1.4997170

Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation 査読有り Open Access

Liu, ZC; Imamura, M; Asano, A; Ishikawa, K; Takeda, K; Kondo, H; Oda, O; Sekine, M; Hori, M

APPLIED PHYSICS EXPRESS 10 巻 ( 8 ) 2017年8月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl<inf>2</inf> plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl<inf>2</inf> plasma emissions with wavelengths of 258 and 306nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

DOI： 10.7567/APEX.10.086502

Temperature dependence of protection layer formation on organic trench sidewall in H<sub>2</sub>/N<sub>2</sub> plasma etching with control of substrate temperature 査読有り

Fukunaga, Y; Tsutsumi, T; Takeda, K; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 7 ) 2017年7月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

For the etching of organic films in H2/N2 plasma, etched profiles are significantly determined by substrate temperature. Here, we control the substrate temperature variation within 3 °C during processing by modulating the plasma-discharge time. The evolution of the cross-sectional profile of line-and-space patterns was observed every 10s. At 60 and 100 °C, sidewall etching was observed during overetching, but not at 20 °C. During the main etching, the sidewalls were protected by the adsorption of by-products at various temperatures. Moreover, we investigated the temperature dependence of protection layer formation by analyzing the surface components of the organic film. The CN layer formed by N radicals has a protective effect that depends on the components of the CN layer. It was found that the ratio of C-N sp<sup>3</sup> to C-N sp<sup>2</sup> in the sidewall was highest at 100°C. By evaluating the radical contribution to CN layer formation, C-N sp<sup>3</sup> bonds were observed to be formed by ions and radiation-assisted reaction.

DOI： 10.7567/JJAP.56.076202

Intracellular-molecular changes in plasma-irradiated budding yeast cells studied using multiplex coherent anti-Stokes Raman scattering microscopy 査読有り Open Access

Furuta, R; Kurake, N; Ishikawa, K; Takeda, K; Hashizume, H; Kondo, H; Ohta, T; Ito, M; Sekine, M; Hori, M

PHYSICAL CHEMISTRY CHEMICAL PHYSICS 19 巻 ( 21 ) 頁： 13438 - 13442 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Physical Chemistry Chemical Physics

Interactions between non-equilibrium atmospheric-pressure plasma (NEAPP) and living cells were examined using multiplex coherent anti-Stokes Raman scattering (CARS) microscopy. Our multiplex CARS analyses revealed that NEAPP irradiation generates short-lived radicals that induce a decrease in the mitochondrial activity of budding yeast cells.

DOI： 10.1039/c7cp00489c

Dry Process FOREWORD 査読有り

Ishikawa, K; Kinoshita, K; Higashi, S; Ichiki, T; Karahashi, K; Kuboi, N

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? 査読有り国際共著 Open Access

Ishikawa, K; Karahashi, K; Ichiki, T; Chang, JP; George, SM; Kessels, WMM; Lee, HJ; Tinck, S; Um, JH; Kinoshita, K

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

DOI： 10.7567/JJAP.56.06HA02

Hydrogen peroxide sensor based on carbon nanowalls grown by plasma-enhanced chemical vapor deposition 査読有り

Tomatsu, M; Hiramatsu, M; Foord, JS; Kondo, H; Ishikawa, K; Sekine, M; Takeda, K; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Fabrication of an electrochemical sensor for hydrogen peroxide (H<inf>2</inf>O<inf>4</inf>) detection was demonstrated. H<inf>4</inf>O<inf>2</inf> is a major messenger molecule in various redox-dependent cellular signaling transductions. Therefore, sensitive detection of H<inf>2</inf>O<inf>2</inf> is greatly important in health inspection and environmental protection. Carbon nanowalls (CNWs) are composed of few-layer graphenes standing almost vertically on a substrate forming a three-dimensional structure. In this work, CNWs were used as a platform for H<inf>2</inf>O<inf>2</inf> sensing, which is based on the large surface area of conducting carbon and surface decoration with platinum (Pt) nanoparticles (NPs). CNWs were grown on carbon fiber paper (CFP) by inductively coupled plasma-enhanced chemical vapor deposition to increase the surface area. Then, the CNW surface was decorated with Pt-NPs by the reduction of H<inf>2</inf>PtCl<inf>6</inf>. Cyclic voltammetry results indicate that the Pt-decorated CNW/CFP electrode possesses excellent electrocatalytic activity for the reduction of H<inf>2</inf>O<inf>2</inf>. Amperometric responses indicate the high-sensitivity detection capability of the Pt-decorated CNW/CFP electrode for H<inf>2</inf>O<inf>2</inf>.

DOI： 10.7567/JJAP.56.06HF03

Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C 査読有り

Takai, S; Lu, Y; Oda, O; Takeda, K; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The InN films were deposited on GaN surfaces at a low temperature of 200 °C by radical-enhanced metal organic chemical vapor deposition (REMOCVD). The REMOCVD system can provide N radicals from the plasma of a N<inf>2</inf>-H<inf>2</inf> mixture gas without using ammonia. Two types of GaN substrate, bulk GaN and GaN on Si(111), were used. The growth mode was modeled as a step flow on the basis of surface morphology observation by atomic force microscopy.

DOI： 10.7567/JJAP.56.06HE08

Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas 査読有り

Ueyama, T; Fukunaga, Y; Tsutsumi, T; Takeda, K; Kondo, H; Ishikawa, K; Sekine, M; Iwata, M; Ohya, Y; Sugai, H; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Electron behaviors in a pulsed dual radio frequency (RF) capacitively coupled plasma of a mixture of C<inf>4</inf>F<inf>8</inf>, O<inf>2</inf>, and Ar gases, where the DC bias of %300V in the RF-on period was imposed and synchronously increased to %1000V in the RF-off period, were investigated. The synchronous DC bias prolongs the electron density (n<inf>e</inf>) decay and provides emission of Ar at a wavelength of 750.38nm in early afterglow at 3 μs during the RF-off period of 10 kHz pulse modulation. The rapid n<inf>e</inf> decay occurred with the electron attachments to the electronegative fluorocarbons, and thus the plasma consisting of positive and negative ions was generated. The DC bias voltage seems to be applied between the electrodes and the positive ions accelerated to the top electrode, and enhanced the secondary electron generation at the top electrode surface in the RF-off period with the ion bombardments, concomitantly with the synchronous emissions.

DOI： 10.7567/JJAP.56.06HC03

Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing 査読有り

Shinoda, K; Miyoshi, N; Kobayashi, H; Miura, M; Kurihara, M; Maeda, K; Negishi, N; Sonoda, Y; Tanaka, M; Yasui, N; Izawa, M; Ishii, Y; Okuma, K; Saldana, T; Manos, J; Ishikawa, K; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 巻 ( 19 ) 2017年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

The demand for precisely controlled etching is increasing as semiconductor device geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will become one of the key technologies in semiconductor device manufacturing at nanometer dimensions. This review describes recent trends in semiconductor devices and some of the latest results on cyclic atomic-level etching. In particular, it focuses on two types of cyclic etching that use different heating procedures: infrared irradiation for isotropic etching and Ar<sup>+</sup> ion bombardment for anisotropic etching. It describes how an inductively-coupled-plasma down-flow etching apparatus with infrared lamps can be used for isotropic cyclic etching. The isotropic cyclic etching of SiN involves the formation and thermal desorption of ammonium hexafluorosilicate-based surface modified layers. This method features high selectivity with respect to SiO<inf>2</inf>, atomic-level control of the amount of SiN etching, and isotropic etched features. On the other hand, the anisotropic cyclic etching with Ar<sup>+</sup> ion bombardment uses a microwave electron-cyclotron-resonance plasma etching apparatus. The anisotropic process for poly Si is composed of cyclic repetitions of chlorine adsorption and Ar<sup>+</sup> ion bombardment. The anisotropic process for SiN is composed of cyclic repetitions involving an adsorption step using hydrofluorocarbon chemistry and a desorption step using Ar<sup>+</sup> ion bombardment. Potential applications of these isotropic/anisotropic cyclic etching processes are described.

DOI： 10.1088/1361-6463/aa6874

Spatial distributions of O, N, NO, OH and vacuum ultraviolet light along gas flow direction in an AC-excited atmospheric pressure Ar plasma jet generated in open air 査読有り

Takeda, K; Ishikawa, K; Tanaka, H; Sekine, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 巻 ( 19 ) 2017年5月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

Ground-state O (<sup>3</sup>P<inf>j</inf>) and N (<sup>4</sup>S°) atoms, nitric oxide (NO) and hydroxyl (OH) radicals, and vacuum ultraviolet (VUV) radiation emitted from an AC-excited Ar atmospheric pressure plasma jet (APPJ) operated in open air were measured using VUV absorption spectroscopy, laser induced fluorescence spectroscopy and optical emission spectroscopy, respectively. The O (<sup>3</sup>P<inf>j</inf>) density decreased with increasing distance from the plasma head, and the decrease rate in the edge region of the plasma jet around 8 mm distance was especially high. On the other hand, the N (<sup>4</sup>S°) atom density was almost constant up to approximately 10 mm and increased with the distance over 12 mm. The relative NO density increased with the distance up to 10 mm and then became saturated, although the OH density was significantly reduced from the plasma jet exit of the head, and could be observed in the plasma jet only up to the distance of 5 mm. Emissions due to N, H and O atoms were observed in the VUV region and the emission intensity for N atoms (wavelength: 174.3 nm) decreased exponentially with increasing the distance. The results obtained with the Ar APPJ operated in open air conditions indicate the generation of many different reactive oxygen and nitrogen species by gas-phase reactions, and the composition of the reactive species is strongly dependent on the distance from the plasma head. These results are very useful for clarifying the kinetics of reactive species in APPJs and their application in various technological fields.

DOI： 10.1088/1361-6463/aa6555

電子スピン共鳴法を活用したプラズマバイオ反応プロセスの診断招待有り査読有り

石川健治, 近藤隆, 竹田圭吾, 呉準席, 橋爪博司, 田中宏昌, 近藤博基, 太田貴之, 伊藤昌文, 関根誠, 堀勝

プラズマ核融合学会誌 2017年5月

Bactericidal pathway of <i>Escherichia coli</i> in buffered saline treated with oxygen radicals 査読有り

Kobayashi, T; Iwata, N; Oh, JS; Hahizume, H; Ohta, T; Takeda, K; Ishikawa, K; Hori, M; Ito, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 巻 ( 15 ) 2017年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

Bactericidal effects of phosphate buffered saline treated with electrically neutral oxygen radicals on Escherichia coli (E. coli) are studied using an atmospheric pressure radical source and colony counting method. To clarify the bactericidal mechanism, the chemistry in phosphate buffers treated with oxygen radicals with and without saline has been quantitatively investigated using the well-established chemical reporters N,N-diethyl-p-phenylenediamine reagent and Amplex Red for residual chlorine (HClO and ClO<sup>-</sup>) and hydrogen peroxide (H<inf>2</inf>O<inf>2</inf>), respectively. From the results, we have found that the presence of chlorine in the solutions treated with oxygen radicals is the most important factor in the further chemical reactions to generate hypochlorous acid in E. coli death, and H<inf>2</inf>O<inf>2</inf> is also linked to the bactericidal effect via an indirect chemical pathway.

DOI： 10.1088/1361-6463/aa61d7

Effects of •OH and •NO radicals in the aqueous phase on H<sub>2</sub>O<sub>2</sub> and NO<sub>2</sub><SUP>-</SUP> generated in plasma-activated medium 査読有り

Kurake, N; Tanaka, H; Ishikawa, K; Takeda, K; Hashizume, H; Nakamura, K; Kajiyama, H; Kondo, T; Kikkawa, F; Mizuno, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 50 巻 ( 15 ) 2017年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

A plasma-activated medium (PAM), which means a cell-culture medium irradiated with cold atmospheric plasmas or non-equilibrium atmospheric pressure plasma (NEAPP), has shown strong antitumor effects on various kinds of cells such as gastric cancer cells, human lung adenocarcinoma cells, human breast cancer cells and so on. In order to clarify the mechanism, it is extremely important to investigate the behaviors of stable and unstable reactive oxygen nitrogen species in culture medium irradiated by NEAPP. The roles of hydroxyl radicals (•OH) and nitric oxide (•NO) were studied to understand the dominant synthetic pathways of H<inf>2</inf>O<inf>2</inf> and in culture medium irradiated with NEAPP. In the PAM, •OH in the aqueous phase was generated predominantly by photo-dissociation. However, most of the H<inf>2</inf>O<inf>2</inf> nor generated in the PAM did not originate from aqueous •OH and •NO. Pathways for the generation of H<inf>2</inf>O<inf>2</inf> and are suggested based on the high concentrations of intermediates generated at the gas/aqueous-phase interface following NEAPP irradiation. On the basis of these results, the reaction model of chemical species in the culture medium is proposed.

DOI： 10.1088/1361-6463/aa5f1d

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