論文 - 石川 健治
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Formation of Nanoporous Features, Flat Surfaces, or Crystallographically Oriented Etched Profiles by the Si Chemical Dry Etching Using the Reaction of F2 + NO -> F + FNO at an Elevated Temperature 査読有り
Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
JOURNAL OF PHYSICAL CHEMISTRY C 117 巻 ( 40 ) 頁: 20810-20818 2013年9月
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Atomic Oxygen Etching from the Top Edges of Carbon Nanowalls 査読有り
Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori
APPLIED PHYSICS EXPRESS 6 巻 頁: 095201 2013年8月
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A Development of Atmospheric Pressure Plasma Equipment and Its Applications for Treatment of Ag Films Formed from Nano-Particle Ink 査読有り
Hitoshi Itoh, Y. Kubota, Y. Kashiwagi, K. Takeda, Kenji Ishikawa, H. Kondo, M. Sekine, H. Toyoda, and M. Hori
J. Phys.: Conf. Ser. 441 巻 頁: 12019 2013年6月
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A novel fast and flexible technique of radical kinetic behavior investigation based on pallet for plasma evaluation structure and numerical analysis 査読有り
Malinowski, Arkadiusz; Takeuchi, Takuya; Chen, Shang; Suzuki, Toshiya; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru; Lukasiak, Lidia; Jakubowski, Andrzej
JOURNAL OF PHYSICS D-APPLIED PHYSICS 46 巻 頁: 265201 2013年6月
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Surface morphology on high-temperature plasma-etched gallium nitride 査読有り
Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
Trans. Mater. Res. Soc. Jpn. 38 巻 頁: 325 2013年6月
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Dissociations of C5F8 and C5HF7 in Etching Plasma 査読有り
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
JAPANESE JOURNAL OF APPLIED PHYSICS 5 巻 頁: 05EB02 2013年5月
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Wavelength dependence of photon-induced interface defects in hydrogenated silicon nitride/Si structure during plasma etching processes 査読有り
Masanaga Fukasawa, Hiroyasu Matsugai, Takayoshi Honda, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Kazunori Nagahata, Fumikatsu Uesawa, Masaru Hori, Tetsuya Tatsumi
JAPANESE JOURNAL OF APPLIED PHYSICS 5 巻 頁: 05ED01 2013年5月
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Surface analysis of gallium nitride (GaN) at elevated substrate temperature 査読有り
Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
APPLIED PHYSICS EXPRESS 6 巻 頁: 056201 2013年4月
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Supercritical Fluid Deposition of High-Density Nanoparticles of Photo-Catalytic TiO2 on Carbon Nanowalls 査読有り
Takeyoshi Horibe, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori
Appl. Phys. Express 6 巻 頁: 045103 2013年4月
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A Room Temperature Si Etching in NO/F2 Gas Chemistry and Its Reaction Mechanism 査読有り
Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Phys. Chem. C 117 巻 ( 10 ) 頁: 5118–5125 2013年2月
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Plasma-activated medium selectively kills glioblastoma brain tumor cells by downregulating a survival signaling molecule, AKT kinase 査読有り
Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori
Plasma Medicine 3 巻 頁: 1 2013年2月
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Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma 査読有り
Takuya Takeuchi, Kenji Ishikawa, Yuichi Setsuhara, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Masaru Hori
J. Phys. D: Appl. Phys. 46 巻 頁: 102001 2013年2月
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Etching-Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma 査読有り
Yudai Miyawaki, Emi Shibata, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Hidekazu Okamoto, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. 52 巻 ( 2 ) 頁: 1 2013年1月
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Impact of hydrogen radical injection plasma on fabrication of microcrystalline silicon thin film for solar cells 査読有り
Yusuke Abe, Sho Kawashima, Atsushi Fukushima, Ya Lu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 2 ) 頁: 033304 2013年1月
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Highly selective etching of SiO2 over Si3N4 and Si in capacitivlly coupled plasma employing C5HF7 gas 査読有り
Yudai Miyawaki, Yusuke Kondo, Makoto Sekine, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori
Jpn. J. Appl. Phys. 52 巻 ( 1 ) 頁: 016201 2013年1月
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Development of high-density nitrogen radical source for low mosaicity and high rate growth of InGaN films in molecular beam epitaxy 査読有り
Shang Chen, Yohjiro Kawai, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Hiroshi Amano, and Masaru Hori
Jpn. J. Appl. Phys. 52 巻 ( 1 ) 頁: 021001 2013年1月
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Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment 査読有り
Takuya Takeuchi, Carles Corbella, Simon Grosse-Kreul, Achim von Keudell, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 1 ) 頁: 014306 2013年1月
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Surface loss probability of H radicals on silicon thin films in SiH4/H2 plasma 査読有り
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 1 ) 頁: 013303 2013年1月
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Individual roles for atoms and ions during hydrogen atom passivation of surface-defects on GaN created by plasma-etching 査読有り
Shang Chen, Kenji Ishikawa, Yi Lu, Ryosuke Kometani, Hiroki Kondo, Yutaka Tokuda, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. 51 巻 ( 11 ) 頁: 111002-1:6 2012年10月
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Critical flux ratio of hydrogen radical to fi lm precursor in microcrystalline silicon deposition for solar cells 査読有り
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
Appl. Phys. Lett. 101 巻 ( 17 ) 頁: 172109-1:4 2012年10月