論文 - 石川 健治
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Behaviors of Absolute Densities of N, H and NH3 at Remote Region of High Density Radical Source Employing N2-H2 Mixture Plasmas 査読有り
Shang Chen, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Makoto Sekine, Hiroyuki Kano, Shoji Den and Masaru Hori
Jpn. J. Appl. Phys. 50 巻 頁： 01AE03:1-4 2011年1月
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Hydrophobic Treatment of Organics against Glass Employing nonequilibrium Atmospheric Pressure Pulsed Plasmas with a Mixture of CF4 and N2 Gases 査読有り
Hirotoshi Inui, Keigo Takeda, Kenji Ishikawa, Takuya Yara, Tsuyoshi Uehara, Makoto Sekine and Masaru Hori
J. Appl. Phys. 109 巻 頁： 013310:1-6 2011年1月
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Measurement of Hydrogen Radical Density and its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Sekine Makoto, Hiroyuki Kano, Naofumi Yoshida, and Masaru Hori
Appl. Phys. Express 3 巻 頁： 126101:1-3 2010年12月
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Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Jpn. J. Appl. Phys. 46 巻 ( 1 ) 頁： 60-64 2007年1月
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Defect creation in diamond by hydrogen plasma treatment at room temperature 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Physica B 376/377 巻 頁： 327-330 2006年6月
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Structure of diamond surface defective layer damaged by hydrogen ion beam exposure 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Diamond Related Mater. 15 巻 ( 4-8 ) 頁： 703-706 2006年5月
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Surface Reactions During Etching of Organic Low-k Films by Plasma of N2 and H2 査読有り
Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Yuichi Yamazaki, Satoshi Yamasaki, Yasushi Ishikawa, and Seiji Samukawa
J. Appl. Phys. 99 巻 ( 8 ) 頁： 083305:1-6 2006年5月
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Effcient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices 査読有り
Hiroshi Kudo, Kenji Ishikawa, Yasuyoshi Mishima, et al.
Jpn. J. Appl. Phys. 45 巻 ( 4B ) 頁： 3150-3153 2006年4月
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理想的な界面形成を追求 半導体のドライ洗浄技術 招待有り
石川健治、安立なつ美
工業材料 54 巻 頁： 1 2006年
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Structural change in diamond by hydrogen plasma treatment at room temperature 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Diamond Related Mater. 14 巻 ( 11-12 ) 頁： 1939-1942 2005年10月
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In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films 査読有り
Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Appl. Phys. Lett. 86 巻 頁： 264104:1-3 2005年6月
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Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition 査読有り
Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura
J. Appl. Phys. 97 巻 ( 5 ) 頁： 053302:1-6 2005年2月
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Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV 査読有り
Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura
J. Vac. Sci. Technol. A 22 巻 ( 4 ) 頁： 1166 2004年6月
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ドライ洗浄技術－半導体製造－ 査読有り
伊藤隆司、杉野林志、石川健治
精密工学会誌 70 巻 頁： 894 2004年
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Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon mono-fluoride ions on silicon dioxide surfaces 査読有り
Kenji Ishikawa, Kazuhiro Karahashi, Hideo Tsuboi, Ken-ichi Yanai, and Moritaka Nakamura
J. Vac. Sci. Technol. A 21 巻 頁： L1-L3 2003年6月
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Surface and gas-phase observations of Ar diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence 査読有り
Kenji Ishikawa, Shigenori Hayashi, and Makoto Sekine
J. Appl. Phys. 93 巻 ( 3 ) 頁： 1403-1408 2003年2月
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Vapor Treatment of Copper Surface Using Organic Acids 査読有り
Kenji Ishikawa, Teruo Yagishita and Moritaka Nakamura
MRS Proceedings 766 巻 2003年
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In-vacuo electron spin resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching 査読有り
Kenji Ishikawa, Shoji Kobayashi, Mitsuru Okigawa, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya
Appl. Phys. Lett. 81 巻 ( 10 ) 頁： 1773-1775 2002年9月
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Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma 査読有り
Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. 41 巻 ( 4A ) 頁： 2207-2212 2002年4月
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Direct observation of surface dangling bonds during plasma process: chemical reactions during H2 and Ar plasma treatments 査読有り
Satoshi Yamasaki, Ujjwal Das, and Kenji Ishikawa
Thin Solid Films 407 巻 ( 1-2 ) 頁： 139-143 2002年2月