論文 - 石川 健治
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Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma 査読有り
Takuya Takeuchi, Kenji Ishikawa, Yuichi Setsuhara, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Masaru Hori
J. Phys. D: Appl. Phys. 46 巻 頁： 102001 2013年2月
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Etching-Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma 査読有り
Yudai Miyawaki, Emi Shibata, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Hidekazu Okamoto, Makoto Sekine, and Masaru Hori
Japanese Journal of Applied Physics 52 巻 ( 2 ) 頁： 020204 2013年1月
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Impact of hydrogen radical injection plasma on fabrication of microcrystalline silicon thin film for solar cells 査読有り
Yusuke Abe, Sho Kawashima, Atsushi Fukushima, Ya Lu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 2 ) 頁： 033304 2013年1月
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Highly selective etching of SiO2 over Si3N4 and Si in capacitivlly coupled plasma employing C5HF7 gas 査読有り
Yudai Miyawaki, Yusuke Kondo, Makoto Sekine, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori
Jpn. J. Appl. Phys. 52 巻 ( 1 ) 頁： 016201 2013年1月
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Development of high-density nitrogen radical source for low mosaicity and high rate growth of InGaN films in molecular beam epitaxy 査読有り
Shang Chen, Yohjiro Kawai, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Hiroshi Amano, and Masaru Hori
Jpn. J. Appl. Phys. 52 巻 ( 1 ) 頁： 021001 2013年1月
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Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment 査読有り
Takuya Takeuchi, Carles Corbella, Simon Grosse-Kreul, Achim von Keudell, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 1 ) 頁： 014306 2013年1月
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Surface loss probability of H radicals on silicon thin films in SiH4/H2 plasma 査読有り
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Appl. Phys. 113 巻 ( 1 ) 頁： 013303 2013年1月
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Individual roles for atoms and ions during hydrogen atom passivation of surface-defects on GaN created by plasma-etching 査読有り
Shang Chen, Kenji Ishikawa, Yi Lu, Ryosuke Kometani, Hiroki Kondo, Yutaka Tokuda, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. 51 巻 ( 11 ) 頁： 111002-1:6 2012年10月
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Critical flux ratio of hydrogen radical to fi lm precursor in microcrystalline silicon deposition for solar cells 査読有り
Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
Appl. Phys. Lett. 101 巻 ( 17 ) 頁： 172109-1:4 2012年10月
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タングステン加熱触媒体により生成した水素ラジカルによるレジスト用ベースポリマーの分解除去 査読有り Open Access
新井 祐, 渡邉 誠, 河野 昭彦, 山岸 忠明, 石川 健治, 堀 勝, 堀邊 英夫
高分子論文集 69 巻 ( 6 ) 頁： 266 - 273 2012年9月
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As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN 査読有り
Shang Chen, Unhi Honda, Tatsunari Shibata, Toshiya Matumura, Yutaka Tokuda, Kenji Ishikawa, Masaru Hori, Hiroyuki Ueda, Tsutomu Uesugi, and Tetsu Kachi
J. Appl. Phys. 112 巻 ( 5 ) 頁： 053513-1:4 2012年9月
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Real-time In Situ Electron Spin Resonance Measurements on Fungal Spores of Penicillium digitatum during Exposure of Oxygen Plasmas 査読有り
Kenji Ishikawa, Hiroko Moriyama, Hiromasa Tanaka, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
Appl. Phys. Lett. 101 巻 ( 1 ) 頁： 013704-1:4 2012年7月
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Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature 査読有り
Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Yutaka Tokuda, Makoto Sekine, and Masaru Hori
AIP advance 2 巻 ( 2 ) 頁： 022149-1:6 2012年6月
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Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma 査読有り
Tatsuya Hagino, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Masaru Hori
Appl. Phys. Express 5 巻 ( 3 ) 頁： 035101-1:3 2012年3月
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Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma 査読有り
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
Jpn. J. Appl. Phys. 51 巻 ( 2 ) 頁： 026505-1:5 2012年2月
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Direct current superposed dual-frequency capacitively-coupled-plasma in selective etch of SiOCH over SiC 査読有り
Tsuyoshi Yamaguchi, Tetsuya Komuro, Chishio Koshimizu, Seigo Takashima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
J. Phys. D: Appl. Phys. 45 巻 ( 2 ) 頁： 025203-1:7 2012年1月
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Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation 査読有り
Masanaga Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Hiroyasu Matsugai, Takayoshi Honda, Masaki Minami, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi
Jpn. J. Appl. Phys. 51 巻 ( 2 ) 頁： 026201-1:7 2012年1月
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Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature 査読有り
Hiroshi Yamamoto, Hiroki Kuroda, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori
Jpn. J. Appl. Phys. 51 巻 ( 1 ) 頁： 016202-1:6 2012年1月
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Quantum Chemical Investigation for Chemical Dry Etching of SiO2 by Flowing NF3 into H2 Downflow Plasma 査読有り
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
Jpn. J. Appl. Phys. 51 巻 ( 1 ) 頁： 016201-1:6 2012年1月
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Electron Spin Resonance (ESR) Observation of Radicals on Biological Organism Interacted with Plasmas 査読有り
Kenji Ishikawa, Hiroko Moriyama, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori
MRS Online Proceedings Library 1469 巻 2012年