研究者詳細 - 石川　健治

論文 - 石川　健治

分割表示 417 件中 201 - 220 件目／全件表示 >>

Etching reactions of Si, SiO<sub>2</sub>, and SiN films using with hydrofluorocarbon compounds 査読有り

Kondo Hiroki, Sekine Makoto, Hori Masaru, Ni Jiawei, Hayashi Toshio, Ishikawa Kenji, Tsutsumi Takayoshi

JSAP Annual Meetings Extended Abstracts 2019.1 巻 ( 0 ) 頁： 1630 - 1630 2019年2月

イネ圃場における定期的な低温プラズマ処理による生育や収穫に対する検討査読有り

橋爪博司, 北野英己, 湯浅元気, 東野里江, 水野寛子, 田中宏昌, 石川健治, 松本省吾, 榊原均, 前島正義, 水野正明, 仁川進, 堀勝

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1675 - 1675 2019年2月

イネ種子への低温プラズマ照射による成長促進効果査読有り

水野寛子, 木下悟, 湯浅元気, 田中宏昌, 榊原均, 北野英己, 石川健治, 前島正義, 松本省吾, 東野里江, 仁川進, 水野正明, 橋爪博司, 堀勝

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1676 - 1676 2019年2月

種子へ低温プラズマ照射したイネ苗の環境制御下における栽培査読有り

松本省吾, 橋爪博司, 北野英己, 湯浅元気, 東野里江, 水野寛子, 木下悟, 田中宏昌, 榊原均, 仁川進, 前島正義, 水野正明, 堀勝, 石川健治

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1677 - 1677 2019年2月

Non-thermal plasma-activated medium modified metabolomic profiles in the glycolysis of U251SP glioblastoma 査読有り

Kurake, N; Ishikawa, K; Tanaka, H; Hashizume, H; Nakamura, K; Kajiyama, H; Toyokuni, S; Kikkawa, F; Mizuno, M; Hori, M

ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS 662 巻頁： 83 - 92 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Archives of Biochemistry and Biophysics

Non-equilibrium atmospheric pressure plasma (NEAPP) is a mixture of radicals, electrons, anions, cations and light at near body temperature. Plasma-activated medium (PAM) is realized using NEAPP provided by engineered devices and irradiated to a cell culture medium for a period of 600 s. Glioblastoma cells U251SP cultivated in PAM previously indicated that antitumor effects induced PAM-specific apoptotic cell-death. Metabolomic profiles of a hundred intracellular metabolites were analyzed using capillary electrophoresis mass spectrometry. The metabolomic profiles of the PAM-treated U251SP cells were changed significantly with inhibition of the glycolysis pathway and with enhancement of the pentose phosphate pathway.

DOI： 10.1016/j.abb.2018.12.001

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF<sub>6</sub>-added plasma etching of quartz glass 査読有り

Nguyen, TTN; Sasaki, M; Odaka, H; Tsutsumi, T; Ishikawa, K; Hori, M

JOURNAL OF APPLIED PHYSICS 125 巻 ( 6 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

High-density and large-volume atmospheric pressure plasma can be extended remotely by placing a long floating wire inside an Ar-gas flowing quartz tube connected with an inductively coupled coil. The discharge quartz tubes were categorized into three I-shaped tubes and one L-shaped tube. The influence of the geometrical design on plasma properties was investigated. Using the floating wire-assisted L tube, an electron density of 10 <sup>14</sup> cm <sup>-3</sup> and a gas temperature less than 850 K were obtained at the downstream remote region. That is where the Ar plasma plume blew out from the slit at the bottom of the floating wire-assisted L tube at a distance of 140 mm from the coil center, when 100 W of a very high-frequency power (100 MHz) was applied to the inductively coupled coil. The applicability of this new L-type plasma source for large-area glass etching with a high etch rate was explored. At the remote region where the Ar plasma plume blew out of the slit of the L tube, SF <inf>6</inf> gas was added for etching a quartz glass plate. Glass etching could be obtained over a large area of 15 mm × 20 mm with a maximum etch rate of 2 μm/min and a volume etch rate of 0.3 mm <sup>3</sup> /min.

DOI： 10.1063/1.5081875

Liquid dynamics in response to an impinging low-temperature plasma jet 査読有り国際共著

Brubaker, TR; Ishikawa, K; Kondo, H; Tsutsumi, T; Hashizume, H; Tanaka, H; Knecht, SD; Bilén, SG; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 7 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

The liquid-phase behavior induced by an atmospheric pressure plasma jet impinging onto water-based solutions was experimentally investigated. An increase in cavity size and circulation size resulting from an increase in impact force of the plasma jet with respect to a helium gas jet were observed through particle image velocimetry and cavity measurements. The increase in circulation size due to plasma discharge was larger than the increase solely due to an increase in jet impact force, suggesting additional shear along the liquid free surface evidenced by schlieren images of plasma-induced gas flow adherence after impingement. Liquid evaporation rate increased and mean liquid temperature decreased due to plasma effects on jet behavior. Plasma-induced decreases in liquid pH and temperature were contained within the circulation flow, leading to strong pH and temperature gradients within the liquid volume. Areas treated by the jet became acidic and remained more acidic than other portions of the liquid due to circulation vortices, highlighting the consequences of jet and liquid vessel parameters for plasma jet-liquid applications.

DOI： 10.1088/1361-6463/aaf460

Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds 査読有り Open Access

Ichikawa, T; Tanaka, S; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Carbon nanowalls (CNWs) were synthesized by radical injection plasma-enhanced chemical vapor deposition and used as scaffolds for cell culture. The proliferation of osteoblast-like cells (Saos-2) was enhanced on the CNW scaffold upon electrical stimulation (ES) with 10 Hz square pulses at a current of 226 nA. However, after incubation with ES for 10 d, differentiation of the cells toward bone formation was suppressed.

DOI： 10.7567/1882-0786/aaf469

Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-<i>k</i> interconnects 査読有り

Miyajima, H; Watanabe, K; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The dielectric interface for a stack of SiOC and SiCN films in Cu/low-k interconnects is engineered using Ar plasma pretreatment of the top surface of SiCN, which prevents oxidization during SiOC film deposition. Oxidized SiCN causes delamination of the SiOC film and resist poisoning through amines generated during resist baking, which can lead to undeveloped photoresist. The Ar plasma pretreatment in the plasma-enhanced chemical vapor deposition chamber modifies the interface by redepositing a thin pre-coated SiOC film from the upper electrode surface. This redeposited SiOC film acts as a buffer for oxygen plasma during SiOC film deposition.

DOI： 10.7567/1347-4065/aafb5b

Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system 査読有り

Fukunaga, Y; Tsutsumi, T; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Anisotropic etching was conducted in H<inf>2</inf>/N<inf>2</inf> plasma. Subsequently, etched organic features were trimmed for a period longer than 300 s, while the substrate temperature was precisely controlled within ±1.2 °C of a set temperature. This temperature control was achieved by automatically-operated on-off sequences of the plasma excitation and bias powers. The free-standing feature, with a width narrower than 12 nm, was fabricated in a self-limiting manner. This manner was achieved by a balance moving between the etching and adsorption of the H and N atoms in the H<inf>2</inf>/N<inf>2</inf> plasma, transited under a constant substrate temperature of 100 °C.

DOI： 10.7567/1347-4065/aaf92a

Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Han, JG; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Control of the bonding structure in carbon materials is achieved by a post-treatment of atmospheric pressure plasma (APP) for magnetron-sputtered carbon films. The APP post-treatment changes the films morphologically owing to the removal and modification of sp<sup>2</sup> bonds on the basis of the near edge X-ray absorption fine structure analysis of sp<sup>2</sup> contents. By APP post-treatment, the resulting changes in surface and bulk properties modify the optical and electrical properties of the carbon films. The control of the film properties can be utilized for various applications, such as gas sensors and solar cells.

DOI： 10.7567/1347-4065/aaec87

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl<sub>2</sub> gas mixtures and a separate supply of nitrogen precursors from a high density radical source 査読有り

Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kohno, M; Kinose, K; Nadahara, S; Nishikawa, M; Ebe, A; Ishikawa, K; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl<inf>2</inf>-mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N<inf>2</inf>-H<inf>2</inf> inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl<inf>2</inf>-added Ar sputtering at a low growth temperature of 670 ?C, whilst the growth mode coalesced at temperatures lower than 600 ?C. With more than 2.0% of Cl<inf>2</inf>, no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 ?C. At the growth temperature of 670 ?C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl<inf>2</inf> and 27.4% N<inf>2</inf>, even though the background pressure was 10<sup>-4</sup> Pa.

DOI： 10.7567/1347-4065/aaeb39

Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Ikarashi, N; Hori, M

ACS APPLIED NANO MATERIALS 2 巻 ( 2 ) 頁： 649 - 654 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ACS Applied Nano Materials

The in situ binding of tin oxide (SnO<inf>2</inf>) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl<inf>2</inf>·2H<inf>2</inf>O) in ethanol as the only precursor. Transmission electron microscopy, Raman analysis, and X-ray diffraction revealed the composite (SNp/GNs) synthesis with SNp of sizes 2-3 nm, which were distributed uniformly and attached to both sides of the GNs. The SNp/GNs composite synthesis was provided by the simple, low-cost, single-processing method of the in-liquid plasma for future gas-sensing and lithium-ion battery applications.

DOI： 10.1021/acsanm.8b02201

Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C<sub>2</sub>F<sub>6</sub>/H<sub>2</sub> plasma-enhanced chemical vapor deposition 査読有り Open Access

Imai, S; Kondo, H; Hyungjun, C; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 1 ) 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

The electrochemical durability of Pt nanoparticles-supported carbon nanowalls (Pt/CNWs) determined from potential cycle tests was 88% performance after 20 000 cycles and 50% performance around 140 000 cycles when the CNWs were fabricated by the C <inf>2</inf> F <inf>6</inf> /H <inf>2</inf> plasma-enhanced chemical vapor deposition system (C <inf>2</inf> F <inf>6</inf> -CNWs). Even after the extended start/stop-simulation tests of fuel cell Pt/C <inf>2</inf> F <inf>6</inf> -CNWs, Pt was aggregated; however, the morphological structure of the CNWs was maintained and no corrosion was evident from scanning electron microscopy observations and Raman analysis. For graphene-based catalyst supports, i.e., the Pt/C <inf>2</inf> F <inf>6</inf> -CNWs, graphene crystallinity is essential to extend electrochemical durability by inhibiting corrosion during fuel cell operation.

DOI： 10.7567/1882-0786/aaf0ab

Batch Fabrication of Nano-Gap Electrode Array Using Photo-Patterning and Resist UV-Curing

Nguyen Hai Minh, Kumeuchi Mako, Kumagai Shinya, Ishikawa Kenji, Hori Masaru, Sasaki Minoru

IEEJ Transactions on Sensors and Micromachines 139 巻 ( 1 ) 頁： 27 - 28 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：The Institute of Electrical Engineers of Japan

<p>A nano-gap electrode array is batch-fabricated based on photolithography. A high resolution is obtained by using an over-hanging resist cover on the under-etched metal film. The process includes two-time mask-patterning. The first photoresist is UV-cured, allowing second patterning without degrading the first pattern. A nano-gap width of 237±63 nm is obtained from a 704-electrode array with an yield of 97%.</p>

DOI： 10.1541/ieejsmas.139.27

Molecular mechanisms of non-thermal plasmainduced effects in cancer cells 査読有り Open Access

Tanaka, H; Mizuno, M; Ishikawa, K; Toyokuni, S; Kajiyama, H; Kikkawa, F; Hori, M

BIOLOGICAL CHEMISTRY 400 巻 ( 1 ) 頁： 87 - 91 2019年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Biological Chemistry

Plasma is the fourth state of matter with higher energy than gas; non-thermal plasma (NTP) is currently available. As NTP is useful in sterilization, promoting wound healing and cancer treatments, the molecular mechanisms of plasma-induced effects in living cells and microorganisms are of significant interest in plasma medicine with medical-engineering collaboration. Molecular mechanisms of plasma-induced effects in cancer cells will be described in this minireview. Both direct and indirect methods to treat cancer cells with NTP have been developed. NTP interacts directly with not only cancer cells but also the liquids surrounding cancer cells and the immune cells that target them. Reactive oxygen and nitrogen species play key roles in NTP-induced effects; however, other mechanisms have been suggested. The complex interactions between NTP, cells and liquids have been extensively studied. In the future, details regarding NTP-induced effects on gene regulatory networks, signaling networks, and metabolic networks will be elucidated.

DOI： 10.1515/hsz-2018-0199

Single-cell microscopic raman spectroscopy for rapid microbial detection 査読有り

Onoshima D., Uchida K., Yukawa H., Ishikawa K., Hori M., Baba Y.

23rd International Conference on Miniaturized Systems for Chemistry and Life Sciences Microtas 2019 頁： 1374 - 1375 2019年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：23rd International Conference on Miniaturized Systems for Chemistry and Life Sciences Microtas 2019

We present a study of microbial Raman spectroscopy towards optimal approach of rapid microbiological methods (RMMs). Raman spectra of single microorganism cells were measured and analyzed by data clustering to identify the microbial species without culturing for colony formation.

DOI： 10.1002/ppap.201900023

Effect of N<sub>2</sub>/H<sub>2</sub> plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) 査読有り Open Access

Amalraj, FW; Dhasiyan, AK; Lu, Y; Shimizu, N; Oda, O; Ishikawa, K; Kondo, H; Sekine, M; Ikarashi, N; Hori, M

AIP ADVANCES 8 巻 ( 11 ) 2018年11月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Aip Advances

We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) technology by which Gallium Nitride (GaN) grows at low temperatures without ammonia gas. In this method, we investigated the effect of N<inf>2</inf>/H<inf>2</inf> plasma on the GaN substrate surface cleaning prior to the growth of homoepitaxial GaN. In-situ reflection high-energy electron diffraction (RHEED) and atomic force microscope (AFM) were used to investigate the surface morphology of the cleaned GaN substrates. The interface between GaN substrate and homoepitaxially grown GaN by REMOCVD was evaluated by transmission electron microscope and the crystal quality was evaluated by X-ray diffraction. The in-situ N<inf>2</inf>/H<inf>2</inf> plasma cleaning at 600 °C shows a smooth surface morphology with streak diffraction lines observed by RHEED. Since the homoepitaxial growth of GaN was performed at 800 °C, the cleaned GaN substrate temperature was ramped up from 600 °C to 800 °C with and without plasma exposure to compare the effect of plasma. Homoepitaxially grown GaN on GaN substrates whose temperature was ramped up with plasma exposure showed good crystal quality with no threading dislocations at the interface. It was found that N<inf>2</inf>/H<inf>2</inf> plasma plays a significant role in the GaN surface cleaning for good quality crystal growth.

DOI： 10.1063/1.5050819

Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching 査読有り

Zhang, Y; Imamura, M; Ishikawa, K; Tsutsumi, T; Kondo, H; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 10 ) 2018年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

To satisfy the requirement for mask materials in high-temperature plasma etching, a novolac-based polymer mask was evaluated during high-temperature Cl<inf>2</inf> plasma etching. Although the etch rate of 8 nm/min was rather high at a low temperature of 230 °C, it decreased with the increase in temperature. The aromatic ring structures were significantly modified by vacuum ultraviolet (VUV) and Cl radicals during the processes above 300 °C and transformed to a highly cross-linked amorphous carbon (a-C) layer at the surface confirmed from infrared and Raman spectra. The formation of this a-C layer improved the etching resistance of the polymer mask. On the other hand, surface roughness can also be improved after processes above 300 °C corresponding to the generation of the a-C layer. Therefore, this polymer mask is a promising candidate for high-temperature plasma etching with high etch resistance, and a smooth surface can be obtained during processes above 300 °C.

DOI： 10.7567/JJAP.57.106502

Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH<sub>4</sub>/H<sub>2</sub> at 300-500 °C 査読有り

Kako, T; Liu, ZC; Ishikawa, K; Kondo, H; Oda, O; Sekine, M; Hori, M

VACUUM 156 巻頁： 219 - 223 2018年10月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Vacuum

Elevated-temperature etching with CH<inf>4</inf>/H<inf>2</inf> plasma chemistry at 300 °C improves damage-less optical properties of GaN, solving issues of degradation on near-band-edge photoluminescence intensity on plasma etching at lower temperatures than 300 °C. Damage-less etching properties in a smooth surface, high photoluminescence intensity, and substantial stoichiometric ratio of gallium and nitrogen were obtained when the CH<inf>4</inf>/H<inf>2</inf> chemistry with substrate temperatures at 300–500 °C.

DOI： 10.1016/j.vacuum.2018.07.040

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