研究者詳細 - 石川　健治

論文 - 石川　健治

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A 65-nm CMOS Fully Integrated Analysis Platform Using an On-Chip Vector Network Analyzer and a Transmission-Line-Based Detection Window for Analyzing Circulating Tumor Cell and Exosome 査読有り Open Access

Niitsu, K; Nakanishi, T; Murakami, S; Matsunaga, M; Kobayashi, A; Karim, NM; Ito, J; Ozawa, N; Hase, T; Tanaka, H; Sato, M; Kondo, H; Ishikawa, K; Odaka, H; Hasegawa, Y; Hori, M; Nakazato, K

IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 13 巻 ( 2 ) 頁： 470 - 479 2019年4月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：IEEE Transactions on Biomedical Circuits and Systems

A fully integrated CMOS circuit based on a vector network analyzer and a transmission-line-based detection window for circulating tumor cell (CTC) and exosome analysis is presented for the first time. We have introduced a fully integrated architecture, which eliminates the undesired parasitic components and enables high-sensitivity, to analyze extremely low-concentration CTC in blood. The detection window was designed on the high-sensitive coplanar waveguide line. To validate the operation of the proposed system, a test chip was fabricated using 65-nm CMOS technology. Measurements were performed after adding a tiny lump of silicone or a droplet of water on its detection window. The measured results show S-21 degradation of-1.96 dB and-6.04 dB for the silicone and the droplet, respectively, at 1.4 GHz. In addition, in another measurement using magnetic beads, it is confirmed that the proposed circuit can analyze even low concentrations of 20 beads/μL. As well as microbeads, measurement with CTCs was successfully demonstrated.

DOI： 10.1109/TBCAS.2018.2882472

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PubMed

Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls 査読有り

Imai, S; Naito, K; Kondo, H; Cho, HJ; Ishikawa, K; Tsutsumi, T; Sekine, M; Hiramatsu, M; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 10 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

For polymer electrolyte fuel cell applications, effects of Pt-nanoparticle-supported 3D carbon nanostructures, i.e. carbon nanowalls (Pt/CNWs), on electrochemical characteristics were determined by alternating current impedance analysis of resistive elements, which contribute to the oxygen reduction reaction. CNWs were fabricated by radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD), and Pt catalysts were formed on the template of CNWs by supercritical fluid metalorganic chemical fluid deposition. CNWs of different wall densities were synthesized during RI-PECVD by varying the deposition pressure. The resistive elements can be consisted of three regions with different corresponding frequencies, and the resistive elements of mass diffusion, which showed up in the lowest frequency region of less than 100 Hz, increased as the wall density of CNWs increased. It was found that the wall density of CNWs was one of the essential parameters of Pt/CNWs for the electrochemical reaction involving the fluid flow and the mass transfer of active materials.

DOI： 10.1088/1361-6463/aaf8e0

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Control of sp2-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH4/H2 plasma-enhanced chemical vapor deposition 査読有り

Sugiura, H; Jia, LY; Ohashi, Y; Kondo, H; Ishikawa, K; Tsutsumi, T; Hayashi, T; Takeda, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 3 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Amorphous carbon (a-C) thin films were deposited under the control of C<inf>2</inf> radical density using radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) with CH<inf>4</inf>/H<inf>2</inf> plasma. By actinometric monitoring of C<inf>2</inf> emission intensities, the plasma parameters were precisely controlled by changing in CH<inf>4</inf>-containing plasma excitation power independent of H<inf>2</inf> plasma excitation. The control of the incorporation of sp2-C clusters in the a-C films during the a-C film depositions is demonstrated by tailoring Raman positions vs. full widths at half maxima for the G band around 1580 cm-1 to the RI-PECVD parameters.

DOI： 10.7567/1347-4065/aafd49

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Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature 査読有り

Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kohno, M; Kinose, K; Nadahara, S; Ishikawa, K; Sekine, M; Hori, M

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 37 巻 ( 2 ) 2019年3月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Vacuum Science and Technology B Nanotechnology and Microelectronics

Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl<inf>2</inf>-BCl<inf>3</inf> mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl<inf>2</inf>, straight sidewall shapes were achieved through BCl<inf>3</inf> gas addition into the Cl<inf>2</inf> plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 °C.

DOI： 10.1116/1.5082345

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Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition 査読有り Open Access

Sugiura, H; Kondo, H; Tsutsumi, T; Ishikawa, K; Hori, M

C-JOURNAL OF CARBON RESEARCH 5 巻 ( 1 ) 2019年3月

Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition 査読有り Open Access

Tomatsu, M; Hiramatsu, M; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

C-JOURNAL OF CARBON RESEARCH 5 巻 ( 1 ) 2019年3月

青果物栽培における低温プラズマ処理の品質への効果査読有り

堀勝, 橋爪博司, 松本省吾, 湯浅元気, 田中宏昌, 榊原均, 東野里江, 水野正明, 北野英己, 坪田憲紀, 仁川進, 伊藤昌文, 前島正義, 大熊隆之, 石川健治

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1678 - 1678 2019年2月

種子へ低温プラズマ照射したイネ苗の環境制御下における栽培査読有り

松本省吾, 橋爪博司, 北野英己, 湯浅元気, 東野里江, 水野寛子, 木下悟, 田中宏昌, 榊原均, 仁川進, 前島正義, 水野正明, 堀勝, 石川健治

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1677 - 1677 2019年2月

Etching reactions of Si, SiO2, and SiN films using with hydrofluorocarbon compounds 査読有り

Kondo Hiroki, Sekine Makoto, Hori Masaru, Ni Jiawei, Hayashi Toshio, Ishikawa Kenji, Tsutsumi Takayoshi

JSAP Annual Meetings Extended Abstracts 2019.1 巻 ( 0 ) 頁： 1630 - 1630 2019年2月

イネ圃場における定期的な低温プラズマ処理による生育や収穫に対する検討査読有り

橋爪博司, 北野英己, 湯浅元気, 東野里江, 水野寛子, 田中宏昌, 石川健治, 松本省吾, 榊原均, 前島正義, 水野正明, 仁川進, 堀勝

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1675 - 1675 2019年2月

イネ種子への低温プラズマ照射による成長促進効果査読有り

水野寛子, 木下悟, 湯浅元気, 田中宏昌, 榊原均, 北野英己, 石川健治, 前島正義, 松本省吾, 東野里江, 仁川進, 水野正明, 橋爪博司, 堀勝

応用物理学会学術講演会講演予稿集 2019.1 巻 ( 0 ) 頁： 1676 - 1676 2019年2月

Non-thermal plasma-activated medium modified metabolomic profiles in the glycolysis of U251SP glioblastoma 査読有り

Kurake, N; Ishikawa, K; Tanaka, H; Hashizume, H; Nakamura, K; Kajiyama, H; Toyokuni, S; Kikkawa, F; Mizuno, M; Hori, M

ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS 662 巻頁： 83 - 92 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Archives of Biochemistry and Biophysics

Non-equilibrium atmospheric pressure plasma (NEAPP) is a mixture of radicals, electrons, anions, cations and light at near body temperature. Plasma-activated medium (PAM) is realized using NEAPP provided by engineered devices and irradiated to a cell culture medium for a period of 600 s. Glioblastoma cells U251SP cultivated in PAM previously indicated that antitumor effects induced PAM-specific apoptotic cell-death. Metabolomic profiles of a hundred intracellular metabolites were analyzed using capillary electrophoresis mass spectrometry. The metabolomic profiles of the PAM-treated U251SP cells were changed significantly with inhibition of the glycolysis pathway and with enhancement of the pentose phosphate pathway.

DOI： 10.1016/j.abb.2018.12.001

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Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass 査読有り

Nguyen, TTN; Sasaki, M; Odaka, H; Tsutsumi, T; Ishikawa, K; Hori, M

JOURNAL OF APPLIED PHYSICS 125 巻 ( 6 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Applied Physics

High-density and large-volume atmospheric pressure plasma can be extended remotely by placing a long floating wire inside an Ar-gas flowing quartz tube connected with an inductively coupled coil. The discharge quartz tubes were categorized into three I-shaped tubes and one L-shaped tube. The influence of the geometrical design on plasma properties was investigated. Using the floating wire-assisted L tube, an electron density of 10 14 cm -3 and a gas temperature less than 850 K were obtained at the downstream remote region. That is where the Ar plasma plume blew out from the slit at the bottom of the floating wire-assisted L tube at a distance of 140 mm from the coil center, when 100 W of a very high-frequency power (100 MHz) was applied to the inductively coupled coil. The applicability of this new L-type plasma source for large-area glass etching with a high etch rate was explored. At the remote region where the Ar plasma plume blew out of the slit of the L tube, SF <inf>6</inf> gas was added for etching a quartz glass plate. Glass etching could be obtained over a large area of 15 mm × 20 mm with a maximum etch rate of 2 μm/min and a volume etch rate of 0.3 mm 3 /min.

DOI： 10.1063/1.5081875

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Liquid dynamics in response to an impinging low-temperature plasma jet 査読有り国際共著

Brubaker, TR; Ishikawa, K; Kondo, H; Tsutsumi, T; Hashizume, H; Tanaka, H; Knecht, SD; Bilén, SG; Hori, M

JOURNAL OF PHYSICS D-APPLIED PHYSICS 52 巻 ( 7 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Journal of Physics D Applied Physics

The liquid-phase behavior induced by an atmospheric pressure plasma jet impinging onto water-based solutions was experimentally investigated. An increase in cavity size and circulation size resulting from an increase in impact force of the plasma jet with respect to a helium gas jet were observed through particle image velocimetry and cavity measurements. The increase in circulation size due to plasma discharge was larger than the increase solely due to an increase in jet impact force, suggesting additional shear along the liquid free surface evidenced by schlieren images of plasma-induced gas flow adherence after impingement. Liquid evaporation rate increased and mean liquid temperature decreased due to plasma effects on jet behavior. Plasma-induced decreases in liquid pH and temperature were contained within the circulation flow, leading to strong pH and temperature gradients within the liquid volume. Areas treated by the jet became acidic and remained more acidic than other portions of the liquid due to circulation vortices, highlighting the consequences of jet and liquid vessel parameters for plasma jet-liquid applications.

DOI： 10.1088/1361-6463/aaf460

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Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds 査読有り Open Access

Ichikawa, T; Tanaka, S; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

APPLIED PHYSICS EXPRESS 12 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Applied Physics Express

Carbon nanowalls (CNWs) were synthesized by radical injection plasma-enhanced chemical vapor deposition and used as scaffolds for cell culture. The proliferation of osteoblast-like cells (Saos-2) was enhanced on the CNW scaffold upon electrical stimulation (ES) with 10 Hz square pulses at a current of 226 nA. However, after incubation with ES for 10 d, differentiation of the cells toward bone formation was suppressed.

DOI： 10.7567/1882-0786/aaf469

Open Access

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Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-k interconnects 査読有り

Miyajima, H; Watanabe, K; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

The dielectric interface for a stack of SiOC and SiCN films in Cu/low-k interconnects is engineered using Ar plasma pretreatment of the top surface of SiCN, which prevents oxidization during SiOC film deposition. Oxidized SiCN causes delamination of the SiOC film and resist poisoning through amines generated during resist baking, which can lead to undeveloped photoresist. The Ar plasma pretreatment in the plasma-enhanced chemical vapor deposition chamber modifies the interface by redepositing a thin pre-coated SiOC film from the upper electrode surface. This redeposited SiOC film acts as a buffer for oxygen plasma during SiOC film deposition.

DOI： 10.7567/1347-4065/aafb5b

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Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system 査読有り

Fukunaga, Y; Tsutsumi, T; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( 2 ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Anisotropic etching was conducted in H<inf>2</inf>/N<inf>2</inf> plasma. Subsequently, etched organic features were trimmed for a period longer than 300 s, while the substrate temperature was precisely controlled within ±1.2 °C of a set temperature. This temperature control was achieved by automatically-operated on-off sequences of the plasma excitation and bias powers. The free-standing feature, with a width narrower than 12 nm, was fabricated in a self-limiting manner. This manner was achieved by a balance moving between the etching and adsorption of the H and N atoms in the H<inf>2</inf>/N<inf>2</inf> plasma, transited under a constant substrate temperature of 100 °C.

DOI： 10.7567/1347-4065/aaf92a

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Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Han, JG; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Control of the bonding structure in carbon materials is achieved by a post-treatment of atmospheric pressure plasma (APP) for magnetron-sputtered carbon films. The APP post-treatment changes the films morphologically owing to the removal and modification of sp2 bonds on the basis of the near edge X-ray absorption fine structure analysis of sp2 contents. By APP post-treatment, the resulting changes in surface and bulk properties modify the optical and electrical properties of the carbon films. The control of the film properties can be utilized for various applications, such as gas sensors and solar cells.

DOI： 10.7567/1347-4065/aaec87

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Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source 査読有り

Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kohno, M; Kinose, K; Nadahara, S; Nishikawa, M; Ebe, A; Ishikawa, K; Hori, M

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl<inf>2</inf>-mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N<inf>2</inf>-H<inf>2</inf> inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl<inf>2</inf>-added Ar sputtering at a low growth temperature of 670 ?C, whilst the growth mode coalesced at temperatures lower than 600 ?C. With more than 2.0% of Cl<inf>2</inf>, no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 ?C. At the growth temperature of 670 ?C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl<inf>2</inf> and 27.4% N<inf>2</inf>, even though the background pressure was 10-4 Pa.

DOI： 10.7567/1347-4065/aaeb39

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Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries 査読有り

Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Ikarashi, N; Hori, M

ACS APPLIED NANO MATERIALS 2 巻 ( 2 ) 頁： 649 - 654 2019年2月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ACS Applied Nano Materials

The in situ binding of tin oxide (SnO<inf>2</inf>) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl<inf>2</inf>·2H<inf>2</inf>O) in ethanol as the only precursor. Transmission electron microscopy, Raman analysis, and X-ray diffraction revealed the composite (SNp/GNs) synthesis with SNp of sizes 2-3 nm, which were distributed uniformly and attached to both sides of the GNs. The SNp/GNs composite synthesis was provided by the simple, low-cost, single-processing method of the in-liquid plasma for future gas-sensing and lithium-ion battery applications.

DOI： 10.1021/acsanm.8b02201

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