論文 - 石川 健治
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Effects of Dissolved Oxygen in HF Solution on Silicon Surface Morphology 査読有り
Hiroki Ogawa, Kenji Ishikawa, Miki T. Suzuki, Yuka Hayami, and Shuzo Fujimura
Jpn. J. Appl. Phys. 34 巻 ( 2B ) 頁： 732-736 1995年2月
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FT-IR-RAS analysis of the structure of the SiO2/Si interface 査読有り
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) 頁： 447 1994年
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Native Oxide Characterization on Silicon Surfaces 査読有り
Hiroki Ogawa, Carlos Inomata, Kenji Ishikawa, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) 頁： 383 1994年
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Observation of Thin SiO2 Films using IR-RAS 査読有り
Shuzo Fujimura, Kenji Ishikawa, and Haruhisa Mori
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by C. R. Helms and B. E. Deal, (Plenum Press) 頁： 91 1993年
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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (IR-RAS) 査読有り
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura and Haruhisa Mori
MRS Proceedings 318 巻 頁： 425-431 1993年