論文 - 石川 健治
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In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films 査読有り
Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Appl. Phys. Lett. 86 巻 頁： 264104:1-3 2005年6月
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Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition 査読有り
Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura
J. Appl. Phys. 97 巻 ( 5 ) 頁： 053302:1-6 2005年2月
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Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV 査読有り
Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura
J. Vac. Sci. Technol. A 22 巻 ( 4 ) 頁： 1166 2004年6月
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ドライ洗浄技術－半導体製造－ 査読有り
伊藤隆司、杉野林志、石川健治
精密工学会誌 70 巻 頁： 894 2004年
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Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon mono-fluoride ions on silicon dioxide surfaces 査読有り
Kenji Ishikawa, Kazuhiro Karahashi, Hideo Tsuboi, Ken-ichi Yanai, and Moritaka Nakamura
J. Vac. Sci. Technol. A 21 巻 頁： L1-L3 2003年6月
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Surface and gas-phase observations of Ar diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence 査読有り
Kenji Ishikawa, Shigenori Hayashi, and Makoto Sekine
J. Appl. Phys. 93 巻 ( 3 ) 頁： 1403-1408 2003年2月
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Vapor Treatment of Copper Surface Using Organic Acids 査読有り
Kenji Ishikawa, Teruo Yagishita and Moritaka Nakamura
MRS Proceedings 766 巻 2003年
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In-vacuo electron spin resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching 査読有り
Kenji Ishikawa, Shoji Kobayashi, Mitsuru Okigawa, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya
Appl. Phys. Lett. 81 巻 ( 10 ) 頁： 1773-1775 2002年9月
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Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma 査読有り
Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. 41 巻 ( 4A ) 頁： 2207-2212 2002年4月
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Direct observation of surface dangling bonds during plasma process: chemical reactions during H2 and Ar plasma treatments 査読有り
Satoshi Yamasaki, Ujjwal Das, and Kenji Ishikawa
Thin Solid Films 407 巻 ( 1-2 ) 頁： 139-143 2002年2月
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Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon 査読有り
Kenji Ishikawa, and Makoto Sekine
J. Appl. Phys. 91 巻 ( 3 ) 頁： 1661-1666 2002年2月
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In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma 査読有り
Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. 39 巻 頁： 6990-6995 2000年12月
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Asymmetric peak line shape on infrared dielectric function spectra of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Kunihiro Suzuki, and Shigeru Okamura
J. Appl. Phys. 88 巻 頁： 7150-7156 2000年
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Thickness-deconvolved structural properties of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. 86 巻 頁： 3472-3474 1999年
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Contribution of interface roughness to infrared spectra of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. 85 巻 頁： 4076-4082 1999年
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Analysis of native oxide growth process on an atomically flattened and hydrogen terminated Si(111) surface in pure water using fourier transformed infrared reflection absorption spectroscopy 査読有り
Shuzo Fujimura, Kenji Ishikawa, and Hiroki Ogawa
J. Vac. Sci. Technol. A 16 巻 ( 1 ) 頁： 375-381 1998年1月
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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature 査読有り
Kenji Ishikawa, Yuji Uchiyama, Hiroki Ogawa, and Shuzo Fujimura
Appl. Surf. Sci. 117/118 巻 頁： 212-215 1997年6月
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Infrared spectroscopy study of the RCA standard clean chemical oxides and their sequencing 査読有り
Carlos Inomata, Hiroki Ogawa, Kenji Ishikawa, and Shuzo Fujimura
J. Electrochem. Soc. 143 巻 ( 9 ) 頁： 2995-3000 1996年9月
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Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces 査読有り
Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, and Shuzo Fujimura
J. Appl. Phys. 79 巻 ( 1 ) 頁： 472-477 1996年1月
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Observation of Oxygen Exposed Hydrogen Terminated Silicon Surface 査読有り
Hiroki Ogawa, Kenji Ishikawa, M. Aoki, Shuzo Fujimura, N. Ueno, Yasuhiro Horiike, Y. Harada
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, edited by H.Z. Massoud, E.H. Poindexter, and C.R. Helms, (The Electrochemical Society, NJ) 頁： 428 1996年