論文 - 石川 健治
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Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon 査読有り
Kenji Ishikawa, and Makoto Sekine
J. Appl. Phys. 91 巻 ( 3 ) 頁: 1661-1666 2002年2月
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In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma 査読有り
Kenji Ishikawa, and Makoto Sekine
Jpn. J. Appl. Phys. 39 巻 頁: 6990-6995 2000年12月
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Asymmetric peak line shape on infrared dielectric function spectra of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Kunihiro Suzuki, and Shigeru Okamura
J. Appl. Phys. 88 巻 頁: 7150-7156 2000年
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Thickness-deconvolved structural properties of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. 86 巻 頁: 3472-3474 1999年
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Contribution of interface roughness to infrared spectra of thermally grown silicon dioxide films 査読有り
Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura
J. Appl. Phys. 85 巻 頁: 4076-4082 1999年
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Analysis of native oxide growth process on an atomically flattened and hydrogen terminated Si(111) surface in pure water using fourier transformed infrared reflection absorption spectroscopy 査読有り
Shuzo Fujimura, Kenji Ishikawa, and Hiroki Ogawa
J. Vac. Sci. Technol. A 16 巻 ( 1 ) 頁: 375-381 1998年1月
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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature 査読有り
Kenji Ishikawa, Yuji Uchiyama, Hiroki Ogawa, and Shuzo Fujimura
Appl. Surf. Sci. 117/118 巻 頁: 212-215 1997年6月
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Infrared spectroscopy study of the RCA standard clean chemical oxides and their sequencing 査読有り
Carlos Inomata, Hiroki Ogawa, Kenji Ishikawa, and Shuzo Fujimura
J. Electrochem. Soc. 143 巻 ( 9 ) 頁: 2995-3000 1996年9月
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Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces 査読有り
Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, and Shuzo Fujimura
J. Appl. Phys. 79 巻 ( 1 ) 頁: 472-477 1996年1月
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Observation of Oxygen Exposed Hydrogen Terminated Silicon Surface 査読有り
Hiroki Ogawa, Kenji Ishikawa, M. Aoki, Shuzo Fujimura, N. Ueno, Yasuhiro Horiike, Y. Harada
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, edited by H.Z. Massoud, E.H. Poindexter, and C.R. Helms, (The Electrochemical Society, NJ) 頁: 428 1996年
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Effects of Dissolved Oxygen in HF Solution on Silicon Surface Morphology 査読有り
Hiroki Ogawa, Kenji Ishikawa, Miki T. Suzuki, Yuka Hayami, and Shuzo Fujimura
Jpn. J. Appl. Phys. 34 巻 ( 2B ) 頁: 732-736 1995年2月
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FT-IR-RAS analysis of the structure of the SiO2/Si interface 査読有り
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) 頁: 447 1994年
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Native Oxide Characterization on Silicon Surfaces 査読有り
Hiroki Ogawa, Carlos Inomata, Kenji Ishikawa, Shuzo Fujimura, and Haruhisa Mori
Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.) 頁: 383 1994年
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Observation of Thin SiO2 Films using IR-RAS 査読有り
Shuzo Fujimura, Kenji Ishikawa, and Haruhisa Mori
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by C. R. Helms and B. E. Deal, (Plenum Press) 頁: 91 1993年
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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (IR-RAS) 査読有り
Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura and Haruhisa Mori
MRS Proceedings 318 巻 頁: 425-431 1993年