論文 - 石川 健治
-
Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma 査読有り
Masaki Minami, Shigetaka Tomiya, Kenji Ishikawa, Ryosuke Matsumoto, Shang Chen, Masanaga Fukasawa, Fumikatsu Uesawa, Makoto Sekine, Masaru Hori, and Tetsuya Tatsumi
Jpn. J. Appl. Phys. 50 巻 ( 8 ) 頁： 08JE03-1:4 2011年8月
-
Spatial Distributions of Electron, CF, CF2 Radical Densities and Gas Temperature in dc-Superposed Dual- Frequency- Capacitively-Coupled Plasma Etch Reactor Employing c-C4F8/N2/Ar gas 査読有り
Tsuyoshi Yamaguchi, Tetsuya Kimura, Chishio Koshimizu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori
Jpn. J. Appl. Phys. 50 巻 ( 5 ) 頁： 0 2011年5月
-
Synergistic Formation of Radicals with Irradiation with both Vacuum Ultraviolet and Atomic Hydrogen: a Real time in situ Electron-Spin-Resonance Study 査読有り Open Access
Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori
J. Phys. Chem. Lett. 2 巻 頁： 1278 - 1281 2011年5月
-
H2/N2 Plasma Damage on Porous Dielectric SiOCH Film Evaluated by In-situ Film Characterization and Plasma Diagnostics 査読有り
Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa, Masafumi Ito, Makoto Sekine, Masaru Hori, Takeshi Kaminatsui, Hisataka Hayashi, Itsuko Sakai, and Tokuhisa Ohiwa
J. Appl. Phys. 109 巻 頁： 084112:1-8 2011年4月
-
Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma 査読有り
Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu
Jpn. J. Appl. Phys. 50 巻 頁： 036203:1-4 2011年3月
-
Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet 査読有り
Fengdong Jia, Naoya Sumi, Kenji Ishikawa, Hiroyuki Kano, Hirotoshi Inui, Jagath Kularatne, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Akihiro Kono, and Masaru Hori
Appl. Phys. Express 4 巻 頁： 026101:1-3 2011年1月
-
Behaviors of Absolute Densities of N, H and NH3 at Remote Region of High Density Radical Source Employing N2-H2 Mixture Plasmas 査読有り
Shang Chen, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Makoto Sekine, Hiroyuki Kano, Shoji Den and Masaru Hori
Jpn. J. Appl. Phys. 50 巻 頁： 01AE03:1-4 2011年1月
-
Hydrophobic Treatment of Organics against Glass Employing nonequilibrium Atmospheric Pressure Pulsed Plasmas with a Mixture of CF4 and N2 Gases 査読有り
Hirotoshi Inui, Keigo Takeda, Kenji Ishikawa, Takuya Yara, Tsuyoshi Uehara, Makoto Sekine and Masaru Hori
J. Appl. Phys. 109 巻 頁： 013310:1-6 2011年1月
-
Measurement of Hydrogen Radical Density and its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Sekine Makoto, Hiroyuki Kano, Naofumi Yoshida, and Masaru Hori
Appl. Phys. Express 3 巻 頁： 126101:1-3 2010年12月
-
Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Jpn. J. Appl. Phys. 46 巻 ( 1 ) 頁： 60-64 2007年1月
-
Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH 査読有り
Masakazu Sugiyama, Isao Gunji, Kenji Ishikawa, Masafumi Nakaishi, Kouichi Yamashita, and Takayuki Ohba
Proc. on Advanced Metallization Conference 2006 (AMC 2006), (October 10-17, 2006, San Diego, CA, USA) 頁： 111 - 116 2006年10月
-
Defect creation in diamond by hydrogen plasma treatment at room temperature 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Physica B 376/377 巻 頁： 327-330 2006年6月
-
Structure of diamond surface defective layer damaged by hydrogen ion beam exposure 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Diamond Related Mater. 15 巻 ( 4-8 ) 頁： 703-706 2006年5月
-
Surface Reactions During Etching of Organic Low-k Films by Plasma of N2 and H2 査読有り
Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Yuichi Yamazaki, Satoshi Yamasaki, Yasushi Ishikawa, and Seiji Samukawa
J. Appl. Phys. 99 巻 ( 8 ) 頁： 083305:1-6 2006年5月
-
Effcient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices 査読有り
Hiroshi Kudo, Kenji Ishikawa, Yasuyoshi Mishima, et al.
Jpn. J. Appl. Phys. 45 巻 ( 4B ) 頁： 3150-3153 2006年4月
-
理想的な界面形成を追求 半導体のドライ洗浄技術 招待有り
石川健治、安立なつ美
工業材料 54 巻 頁： 1 2006年
-
Structural change in diamond by hydrogen plasma treatment at room temperature 査読有り
Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki
Diamond Related Mater. 14 巻 ( 11-12 ) 頁： 1939-1942 2005年10月
-
In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films 査読有り
Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki
Appl. Phys. Lett. 86 巻 頁： 264104:1-3 2005年6月
-
Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition 査読有り
Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura
J. Appl. Phys. 97 巻 ( 5 ) 頁： 053302:1-6 2005年2月
-
Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV 査読有り
Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura
J. Vac. Sci. Technol. A 22 巻 ( 4 ) 頁： 1166 2004年6月