Papers - NAKATSUKA, Osamu
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Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed
T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 ( 8S1 ) page： 08LD03 (6 pages) 2014.7
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Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 ( 8S1 ) page： 08LD02 (6 pages) 2014.7
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多層セル型太陽電池用IV族多元系混晶の結晶成長と界面構造制御 Invited Reviewed
中塚理, 財満鎭明
日本結晶成長学会誌 Vol. 41 ( 2 ) page： 74-80 2014.7
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［依頼講演］ “絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ～ 低融点Snの活用 ～ Invited
黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 91-95 2014.6
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Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減
鈴木陽洋, 朝羽俊介, 横井淳, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 中塚理, 財満鎭明
電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 11-16 2014.6
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Ge1-xSnxエピタキシャル成長における積層欠陥構造の制御
浅野孝典, 田岡紀之, 中塚理, 財満鎭明
電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 21-25 2014.6
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n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用
竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
電子情報通信学会技術研究報告 Vol. 114 ( 57 ) page： 113-118 2014.5
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Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx- and strained Ge-based channels Reviewed
H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 104 page： 202107 (5 pages) 2014.5
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Formation of high-quality Ge1-xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces Reviewed
T. Asano, N. Taoka, O. Nakatsuka and S. Zaima
Appl. Phys. Express Vol. 7 ( 6 ) page： 061301 (3 pages) 2014.5
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Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed
N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima
J. Appl. Phys. Vol. 115 page： 173102 (7 pages). 2014.5
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Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 557 page： 282–287 2014.4
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Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts Reviewed
Y. S. Deng, O. Nakatsuka, J. Yokoi, N. Taoka, and S. Zaima
Thin Solid Films Vol. 557 page： 84-89 2014.4
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Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method for Devices with Ge/SiGe Reviewed
T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima
Thin Solid Films Vol. 557 page： 129-134 2014.4
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Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 557 page： 159–163 2014.4
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Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
Thin Solid Films Vol. 557 page： 164–168 2014.4
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Analysis for positions of Sn atoms in epitaxial Ge1-xSnx film in low temperature depositions Reviewed
E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, and S. Zaima, K. Izunome, K. Kashima
Thin Solid Films Vol. 557 page： 173–176 2014.4
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Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films Reviewed
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 557 page： 276–281 2014.4
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Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed
K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 557 page： 192–196 2014.4
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Formation and crystalline structure of Ni silicides on Si(110) substrate Reviewed
O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 ( 5S2 ) page： 05GA12 (5 pages) 2014.4
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Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction Reviewed
N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima
Jpn. J. Appl. Phys. Vol. 53 ( 5S2 ) page： 05GE03 (6 pages) 2014.4