Papers - NAKATSUKA, Osamu
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Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価
金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
信学技報 Vol. 116 ( 118 ) page： 37-41 2016.6
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Crystalline Structure of TiC Ultra Thin Layers Formed on Highly Oriented Pyrolytic Graphite by Chemical Reaction from Ti/Graphite System Reviewed
O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 6S3 ) page： 06JE02 (4 pages) 2016.6
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Sn系IV族半導体混晶薄膜の成長と物性評価 Invited
志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
信学技報 Vol. 116 ( 1 ) page： 23-26 2016.4
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Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EB13 (5 pages) 2016.3
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Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects Reviewed
S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EJ11 (5 pages) 2016.3
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Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge Reviewed
W. Takeuchi, K. Yamamoto, N. Taoka, M.Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04ER13 (5 pages) 2016.3
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Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EB12 (6 pages) 2016.3
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Experimental observation of type-I energy band alignment in lattice matched Ge1-x-y SixSny/Ge heterostructures Reviewed
T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 061909 (5 pages) 2016.2
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Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 108 page： 052104 (4 pages) 2016.2
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Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnxepitaxial layers on Si(110) substrates Reviewed
S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 598 page： 72-81 2016.1
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Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed
Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 602 page： 7-12 2016
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Characterization of Shallow- and Deep-Level Defects of Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements Reviewed
W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS J. Solid State Sci. Tech. Vol. 5 ( 4 ) page： P3082-P3086 2015.12
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Mobility Behavior of Si1-x-yGexSny Polycrystals Grown on Insulators Reviewed
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Trans. MRS-J Vol. 40 ( 4 ) page： 351-354 2015.12
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Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 212103 (5 pages) 2015.11
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Atom probe tomography study on Ge1-x-ySnxCy hetero-epitaxial film on Ge substrates Reviewed
E. Kamiyama, K. Sueoka, K. Terasawa, T. Yamaha, O. Nakatsuka, S. Zaima, K. Izunome, K. Kashima, and H. Uchida
Thin Solid Films Vol. 592 ( A ) page： 54-58 2015.10
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Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed
Y. Inuzuka, S. Ikea, T. Asanoa, W. Takeuchi, O. Nakatsuka, and S. Zaima
Thin Solid Films page： in press 2015.10
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Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Invited Reviewed
S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, M. Sakashita
ECS Trans. Vol. 69 ( 10 ) page： 89-98 2015.10
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Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures Reviewed
K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
Appl. Phys. Lett. Vol. 107 page： 102102 (5 pages) 2015.9
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Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed
T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid State Electronics Vol. 110 page： 54-58 2015.8
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Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition Reviewed
Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima
Solid State Electronics Vol. 110 page： 44-48 2015.8