Papers - NAKATSUKA, Osamu
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Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed
Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 51 page： 01AJ01 2012.1
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Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique Reviewed
K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 ( 10 ) page： 10PE02 (7 pages) 2011.10
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Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films Reviewed
M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai
Jpn. J. Appl. Phys. Vol. 50 ( 8 ) page： 08LB11 (4 pages) 2011.8
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Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems Reviewed
T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
Solid-State Electronics Vol. 60 ( 1 ) page： 46-52 2011.6
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Control of Strain Relaxation Behavior of Ge1-xSnx Layers Reviewed
Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima
Solid-State Electronics Vol. 60 ( 1 ) page： 84-88 2011.6
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Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen Reviewed
K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima
Solid-State Electronics Vol. 60 ( 1 ) page： 70-74 2011.6
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Ge1-xSnx stressors for strained-Ge CMOS Invited Reviewed
S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
Solid-State Electronics Vol. 60 ( 1 ) page： 53-57 2011.6
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Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts Reviewed
T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima
Microelectron. Eng. Vol. 88 ( 5 ) page： 605-609 2011.5
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Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction Reviewed
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
pn. J. Appl. Phys. Vol. 50 page： 05ED03 2011.5
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Formation of Palladium Silicide Thin Layers on Si(110) Substrates Reviewed
R. Suryana, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 page： 05EA09 2011.5
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Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer Reviewed
C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax
Appl. Phys. Lett. Vol. 98 page： 192110 2011.5
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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Reviewed
B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo
,Microelectron. Eng. Vol. 88 ( 4 ) page： 342-346 2011.4
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Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed
M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 page： 04DA08 2011.4
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Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 50 page： 04DA17 2011.4
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Pr酸化膜/Si構造へのAl導入による界面反応抑制効果
古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 51-54 2011.1
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電流検出型原子間力顕微鏡を 用いた欠陥に起因するPr酸化膜のリーク電流機構の解明
足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 123-126 2011.1
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Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響
加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 99-102 2011.1
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Al2O3界 面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御
加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 55-58 2011.1
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GeSn Technology: Impact of Sn on Ge CMOS Applications Invited Reviewed
S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
ECS Trans. Vol. 41 ( 7 ) page： 231-238 2011
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Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers Reviewed
Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
Thin Solid Films Vol. 518 ( 6 ) page： S2-S5 2010