Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

Division display 21 - 40 of about 286 ／ All the affair displays >>

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed

Oishi, R; Asaka, K; Bolotov, L; Uchida, N; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Reviewed

Doi, T; Shibayama, S; Sakashital, M; Taokal, N; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 2 ) 2022.2

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height Reviewed

Doi, T; Shibayama, S; Sakashita, M; Kojima, K; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS Vol. 15 ( 1 ) 2022.1

Photoluminescence properties of heavily Sb doped Ge<sub>1-<i>x</i> </sub>Sn<i> <sub>x</sub> </i> and heterostructure design favorable for n<SUP>+</SUP>-Ge<sub>1-<i>x</i> </sub>Sn<i> <sub>x</sub> </i> active layer Reviewed

Zhang, SY; Fukuda, M; Jeon, J; Sakashita, M; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SA ) 2022.1

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region Reviewed

Peng, Y; Miao, L; Liu, CY; Song, HL; Kurosawa, M; Nakatsuka, O; Back, SY; Rhyee, JS; Murata, M; Tanemura, S; Baba, T; Baba, T; Ishizaki, T; Mori, T

ADVANCED ENERGY MATERIALS Vol. 12 ( 2 ) 2022.1

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/<i>n</i>-Ge(001) Contacts Reviewed

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 10 page： 744 - 750 2022

Reinforcement of power factor in N-type multiphase thin film of Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed

Lai, HJ; Peng, Y; Gao, J; Song, HL; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

APPLIED PHYSICS LETTERS Vol. 119 ( 11 ) 2021.9

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion Reviewed

Doi, T; Shibayama, S; Sakashita, M; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( 7 ) 2021.7

No external load measurement strategy for micro thermoelectric generator based on high-performance Si<sub>1-x-y</sub>Ge<sub>x</sub>Sn<sub>y</sub> film Reviewed

Peng, Y; Zhu, SJ; Lai, HJ; Gao, J; Kurosawa, M; Nakatsuka, O; Tanemura, S; Peng, BL; Miao, L

JOURNAL OF MATERIOMICS Vol. 7 ( 4 ) page： 665 - 671 2021.7

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO<sub>2</sub>-ZrO<sub>2</sub> System Reviewed

Shibayama, S; Nagano, J; Asaka, K; Sakashita, M; Nakatsuka, O

ACS APPLIED ELECTRONIC MATERIALS Vol. 3 ( 5 ) page： 2203 - 2211 2021.5

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency Reviewed

Lai Huajun, Peng Ying, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Miao Lei

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1

Improved interface uniformity of epitaxial HfGe<sub>2</sub>/Ge(001) contact by microfabrication and its electron conduction property Reviewed

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021) page： 58 - 60 2021

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed

Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 117 ( 23 ) 2020.12

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane Invited Reviewed

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans. Vol. 98 page： 169 - 176 2020.10

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans. Vol. 98 page： 149 - 156 2020.10

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed

Peng Ying, Lai Huajun, Liu Chengyan, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Zaima Shigeaki, Tanemura Sakae, Miao Lei

APPLIED PHYSICS LETTERS Vol. 117 ( 5 ) 2020.8

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing Reviewed

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Saturation of electrically activated Sb concentration in heavily Sb-doped n(+)-Ge1-xSnx epitaxial layers Reviewed

Jeon Jihee, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed

Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 116 ( 22 ) 2020.6

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer Reviewed

Hashimoto Kentaro, Doi Takuma, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

　 PREV - NEXT 　

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15