Faculty Profiles - NAKATSUKA, Osamu

Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 117 ( 23 ) 2020.12

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane Invited Reviewed

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans. Vol. 98 page： 169 - 176 2020.10

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans. Vol. 98 page： 149 - 156 2020.10

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed

Peng Ying, Lai Huajun, Liu Chengyan, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Zaima Shigeaki, Tanemura Sakae, Miao Lei

APPLIED PHYSICS LETTERS Vol. 117 ( 5 ) 2020.8

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing Reviewed

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Saturation of electrically activated Sb concentration in heavily Sb-doped n(+)-Ge1-xSnx epitaxial layers Reviewed

Jeon Jihee, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.7

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed

Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 116 ( 22 ) 2020.6

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer Reviewed

Hashimoto Kentaro, Doi Takuma, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed

Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed

Peng Ying, Miao Lei, Gao Jie, Liu Chengyan, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SCIENTIFIC REPORTS Vol. 9 2019.10

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. Vol. 92 ( 4 ) page： 41-46 2019.10

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

Vol. 119 ( 96 ) page： 5-9 2019.6

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報 Vol. 119 ( 96 ) page： 17-20 2019.6

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi

APPLIED PHYSICS EXPRESS Vol. 12 ( 5 ) 2019.5

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4

Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition Reviewed

Miki Yusuke, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

Kurosawa Masashi, Inaishi Yu, Tange Ryuji, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 Reviewed

Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) page： . 2019

Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) Reviewed

Pratiwi Nur'aini Dian, Handayani Mita, Suryana Risa, Nakatsuka Osamu

MATERIALS TODAY-PROCEEDINGS Vol. 13 page： 92 - 96 2019

Patterned Porous Silicon Prepared by Reactive Ion Etching Technique Reviewed

Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018 Vol. 578 2019

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures Reviewed

Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact Reviewed

Deng Yunsheng, He Dongsheng, Qiu Yang, Gu Rui, He Jiaqing, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 113 ( 25 ) 2018.12

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n(+)-Ge1-xSnx structure Reviewed

Jeon Jihee, Suzuki Akihiro, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors Reviewed

Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 12 ) 2018.12

Optoelectronic properties of high-Si-content-Gel-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Ultra-thin germanium-tin on insulator structure through direct bonding technique Reviewed

Maeda Tatsuro, Chang Wen Hsin, Irisawa Toshifumi, Ishii Hiroyuki, Oka Hiroshi, Kurosawa Masashi, Imai Yukihiro, Nakatsuka Osamu, Uchida Noriyuki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si Reviewed

Gupta S., Shimura Y., Richard O., Douhard B., Simoen E., Bender H., Nakatsuka O., Zaima S., Loo R., Heyns M.

APPLIED PHYSICS LETTERS Vol. 113 ( 19 ) 2018.11

Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Reviewed

Nakatsuka Osamu, Suzuki Akihiro, McVittie James, Nishi Yoshio, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed

Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma Reviewed

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS Vol. 112 ( 6 ) 2018.2

Epitaxial growth of heavily doped n(+)-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

THIN SOLID FILMS Vol. 645 page： 57 - 63 2018.1

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed

Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition Reviewed

Takeuchi Wakana, Washizu Tomoya, Ike Shinichi, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering Reviewed

Peng Ying, Miao Lei, Li Chao, Huang Rong, Urushihara Daisuke, Asaka Toru, Nakatsuka Osamu, Tanemura Sakae

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor Reviewed

Doi Takuma, Takeuchi Wakana, Jin Yong, Kokubun Hiroshi, Yasuhara Shigeo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

The morphological study of porous silicon formed by electrochemical anodization method

Suryana R., Sandi D. K., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2017 Vol. 333 2018

A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed

Kurosawa Masashi, Imai Yukihiro, Iwahashi Taisei, Takahashi Kouta, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 Vol. 86 ( 7 ) page： 321 - 328 2018

In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 12 ) 2017.12

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed

Kurosawa Masashi, Kato Motohiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS Vol. 111 ( 19 ) 2017.11

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices Reviewed

K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 12-16 2017.11

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed

A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 162-166 2017.11

Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 156-161 2017.11

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 151-155 2017.11

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz Reviewed

Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 133-138 2017.11

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration Reviewed

Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 139 - 144 2017.11

Sii(1-x)Ge(x) bulk single crystals for substrates of electronic devices Reviewed

Kinoshita Kyoichi, Arai Yasutomo, Maeda Tatsuro, Nakatsuka Osamu

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 12 - 16 2017.11

Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/ Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

Fukuda, M; Yamaha, T; Asano, T; Fujinami, S; Shimura, Y; Kurosawa, M; Nakatsuka, O; Zaima, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 156 - 161 2017.11

Growth and Applications of Si1-xSnx Thin Films Invited Reviewed

M. Kurosawa, O. Nakatsuka, and S. Zaima

ECS Trans. Vol. 8 ( 4 ) page： 253-258 2017.10

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 10 ) 2017.10

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition Reviewed

T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Crystal Growth Vol. 468 page： 614-619 2017.7

Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed

Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4

4H-SiC MOSキャパシタのAlON絶縁膜のリーク電流特性に窒素結合状態が与える効果

竹内和歌奈, 山本建策, 三村智博, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回） page： 127-130 2017.1

水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回） page： 67-70 2017.1

金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果

鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明

特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回） page： 63-66 2017.1

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effect on crystalline and photoluminescence properties Reviewed

O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima

Jpn. J. Appl. Phys. Vol. 56 ( 1S ) page： 01AB05 (6 pages) 2017.1

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties Reviewed

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 56 ( 1S ) page： 01AB02 (7 pages) 2017.1

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration Reviewed

Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 57 page： 48 - 53 2017.1

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property Reviewed

Nakatsuka, O; Fujinami, S; Asano, T; Koyama, T; Kurosawa, M; Sakashita, M; Kishida, H; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

Solid-phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of their crystalline and optical properties Reviewed

Yano, S; Yamaha, T; Shimura, Y; Takeuchi, W; Sakashita, M; Kurosawa, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1

Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration Reviewed

N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder

Mater. Sci. Semicond. Proc. Vol. 57 page： 48-53 2017

Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors Reviewed

Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) page： 249 - 251 2017

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction Reviewed

S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima

ECS Trans. Vol. 75 ( 8 ) page： 769-775 2016.10

Influence of GeO2 deposition temperature by in atomic layer deposition on electrical properties of Ge gate stack+K12 Reviewed

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 8S2 ) page： 08PC05 (5 pages) 2016.8

Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 8S2 ) page： 08PE04 (4 pages) 2016.8

Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価

金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

信学技報 Vol. 116 ( 118 ) page： 37-41 2016.6

Crystalline Structure of TiC Ultra Thin Layers Formed on Highly Oriented Pyrolytic Graphite by Chemical Reaction from Ti/Graphite System Reviewed

O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 6S3 ) page： 06JE02 (4 pages) 2016.6

Sn系IV族半導体混晶薄膜の成長と物性評価 Invited

志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

信学技報 Vol. 116 ( 1 ) page： 23-26 2016.4

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EB13 (5 pages) 2016.3

Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects Reviewed

S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EJ11 (5 pages) 2016.3

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge Reviewed

W. Takeuchi, K. Yamamoto, N. Taoka, M.Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04ER13 (5 pages) 2016.3

Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Jpn. J. Appl. Phys. Vol. 55 ( 4S ) page： 04EB12 (6 pages) 2016.3

Experimental observation of type-I energy band alignment in lattice matched Ge1-x-y SixSny/Ge heterostructures Reviewed

T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 108 page： 061909 (5 pages) 2016.2

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 108 page： 052104 (4 pages) 2016.2

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnxepitaxial layers on Si(110) substrates Reviewed

S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 598 page： 72-81 2016.1

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 602 page： 7-12 2016

Characterization of Shallow- and Deep-Level Defects of Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements Reviewed

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS J. Solid State Sci. Tech. Vol. 5 ( 4 ) page： P3082-P3086 2015.12

Mobility Behavior of Si1-x-yGexSny Polycrystals Grown on Insulators Reviewed

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Trans. MRS-J Vol. 40 ( 4 ) page： 351-354 2015.12

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Appl. Phys. Lett. Vol. 107 page： 212103 (5 pages) 2015.11

Atom probe tomography study on Ge1-x-ySnxCy hetero-epitaxial film on Ge substrates Reviewed

E. Kamiyama, K. Sueoka, K. Terasawa, T. Yamaha, O. Nakatsuka, S. Zaima, K. Izunome, K. Kashima, and H. Uchida

Thin Solid Films Vol. 592 ( A ) page： 54-58 2015.10

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed

Y. Inuzuka, S. Ikea, T. Asanoa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films page： in press 2015.10

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Invited Reviewed

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, M. Sakashita

ECS Trans. Vol. 69 ( 10 ) page： 89-98 2015.10

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures Reviewed

K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 107 page： 102102 (5 pages) 2015.9

Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed

T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics Vol. 110 page： 54-58 2015.8

Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition Reviewed

Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

Solid State Electronics Vol. 110 page： 44-48 2015.8

Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates Reviewed

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics Vol. 110 page： 49-53 2015.8

Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline property Reviewed

T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 54 ( 8S1 ) page： 08KA11 2015.7

High-mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 107 page： 022103 (4 pages) 2015.7

Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果

浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 115 ( 108 ) page： 63-68 2015.6

Epitaxial Ge1-xSnx layers grown by metal-organic chemical vapor deposition using Tertiary-butyl-germane and Tri-butyl-vinyl-tin Reviewed

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Solid State Lett. Vol. 4 ( 8 ) page： P1-P3 2015.6

SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響 Invited

竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 115 ( 108 ) page： 27-30 2015.6

金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御

鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 115 ( 108 ) page： 57-61 2015.6

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed

S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Appl. Phys. Lett. Vol. 106 page： 182104 (5 pages) 2015.5

高Sn組成SiSnの形成とバンド構造　～直接遷移構造化を目指して～ Invited

黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 115 ( 18 ) page： 35-37 2015.4

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 106 page： 171908 (5 pages) 2015.4

Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts Reviewed

Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima

Jpn. J. Appl. Phys. Vol. 54 ( 5S ) page： 05EA01 (6 pages) 2015.4

Impact of Hydrogen Surfactant on Crystallinity of Ge1-xSnx Epitaxial Layers Reviewed

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 54 ( 4S ) page： 04DH15 (4 pages) 2015.3

エピタキシャル金属/ゲルマニウム接合の形成による界面電気伝導特性の制御 Invited

中塚理, 鄧云生, 鈴木陽洋, 坂下満男, 田岡紀之, 財満鎭明

電子情報通信学会技術研究報告 Vol. 114 ( 469 ) page： 17-22 2015.3

Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed

T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys Vol. 54 ( 4S ) page： 04DH08 (6 pages) 2015.2

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition Reviewed

S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 106 page： 062107 (4 pages) 2015.2

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation Reviewed

N. Taoka, T. Asano, T. Yamaha, T. Terashima, O. Nakatsuka, I. Costina, P. Zaumseil, G. Capellini, S. Zaima, and T. Schroeder

Appl. Phys. Lett. Vol. 106 page： 061107 (5 pages) 2015.2

GeO2薄膜の正方晶形成による化学的安定性の向上

柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会） page： 185-188 2015.1

Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会） page： 59-62 2015.1

Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration Reviewed

K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 105 page： 122103 (5 pages) 2014.9

Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) Reviewed

K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 8S1 ) page： 08LD04 (8 pages) 2014.7

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 8S1 ) page： 08LD03 (6 pages) 2014.7

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 8S1 ) page： 08LD02 (6 pages) 2014.7

多層セル型太陽電池用IV族多元系混晶の結晶成長と界面構造制御 Invited Reviewed

中塚理, 財満鎭明

日本結晶成長学会誌 Vol. 41 ( 2 ) page： 74-80 2014.7

［依頼講演］ “絶縁膜上におけるIV族半導体多結晶薄膜の低温形成～低融点Snの活用～ Invited

黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 91-95 2014.6

Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

鈴木陽洋, 朝羽俊介, 横井淳, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 11-16 2014.6

Ge1-xSnxエピタキシャル成長における積層欠陥構造の制御

浅野孝典, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 114 ( 88 ) page： 21-25 2014.6

n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用

竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告 Vol. 114 ( 57 ) page： 113-118 2014.5

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx- and strained Ge-based channels Reviewed

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 104 page： 202107 (5 pages) 2014.5

Formation of high-quality Ge1-xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces Reviewed

T. Asano, N. Taoka, O. Nakatsuka and S. Zaima

Appl. Phys. Express Vol. 7 ( 6 ) page： 061301 (3 pages) 2014.5

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed

N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima

J. Appl. Phys. Vol. 115 page： 173102 (7 pages). 2014.5

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 557 page： 282–287 2014.4

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts Reviewed

Y. S. Deng, O. Nakatsuka, J. Yokoi, N. Taoka, and S. Zaima

Thin Solid Films Vol. 557 page： 84-89 2014.4

Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method for Devices with Ge/SiGe Reviewed

T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima

Thin Solid Films Vol. 557 page： 129-134 2014.4

Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed

T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 557 page： 159–163 2014.4

Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Thin Solid Films Vol. 557 page： 164–168 2014.4

Analysis for positions of Sn atoms in epitaxial Ge1-xSnx film in low temperature depositions Reviewed

E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, and S. Zaima, K. Izunome, K. Kashima

Thin Solid Films Vol. 557 page： 173–176 2014.4

Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 557 page： 276–281 2014.4

Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed

K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 557 page： 192–196 2014.4

Formation and crystalline structure of Ni silicides on Si(110) substrate Reviewed

O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 5S2 ) page： 05GA12 (5 pages) 2014.4

Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction Reviewed

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 5S2 ) page： 05GE03 (6 pages) 2014.4

Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate Reviewed

Y. Deng, O. Nakatsuka, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 5S2 ) page： 05GA06 (6 pages) 2014.4

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode Reviewed

A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 53 ( 4S ) page： 04EA06 (6 pages) 2014.3

Large grain growth of Ge-rich Ge1-x Snx (x~0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed

M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 104 page： 061901 (3 pages) 2014.2

Defects Induced by Reactive Ion Etching in Ge Substrate Reviewed

Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

Advanced Materials Research Vol. 896 page： 241-244 2014.2

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会） page： 205-208 2014.1

低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理,財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会） page： 13-16 2014.1

固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性

加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会） page： 37-40 2014.1

MOCVD法により形成した極薄GeO2を用いた Al2O3/GeOx/Ge 構造の電気的特性および構造評価

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会） page： 131-134 2014.1

Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1-xSnx film grown at low temperature Reviewed

E. Kamiyama, S. Nakagawa, K Sueoka, T. Ohmura, T. Asano, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, and K. Kashima

Appl. Phys. Express Vol. 7 ( 2 ) page： 021302 (3 pages) 2014.1

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 205-208 2014.1

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 39-42 2014.1

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 151-154 2014.1

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 155-158 2014.1

Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Trans. Vol. 58 ( 9 ) page： 301-308 2013.10

Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities Invited Reviewed

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

ECS Trans. Vol. 58 ( 9 ) page： 149-155 2013.10

Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by Using Microdiffraction Method Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima,

ECS Trans. Vol. 58 ( 9 ) page： 185-192 2013.10

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

Appl. Phys. Lett. Vol. 103 page： 101904 (4 pages) 2013.9

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 103 page： 082114 (4 pages) 2013.8

Broad defect depth distribution in germanium substrates induced by CF4 plasma Reviewed

Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett. Vol. 103 page： 033511 (4 pages) 2013.7

Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics Invited Reviewed

O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima

Solid-State Electron. Vol. 83 page： 82-86 2013.5

Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(1 1 0) substrates

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Solid-State Electron. Vol. 83 page： 71-75 2013.5

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid-State Electron. Vol. 83 page： 56-60 2013.5

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 52 page： 04CA08 (7 pages) 2013.4

Influence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) Substrates Reviewed

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 531 page： 504-508 2013.3

Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film Reviewed

W. Takeuchi, K. Furuta, K .Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser. Vol. 417 page： 012017 (6 pages) 2013.3

Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser. Vol. 417 page： 012001 2013.3

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 52 page： 01AC04 2013.1

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 39-42 2013.1

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 155-158 2013.1

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 151-154 2013.1

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(0 0 1) substrates Reviewed

T. Shinoda, O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima

Appl. Surf. Sci. Vol. 259 ( 15 ) page： 754-757 2012.10

Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy Reviewed

T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima

ECS Trans. Vol. 50 ( ９ ) page： 907-913 2012.10

Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content Invited Reviewed

S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka

ECS Trans. Vol. 50 ( 9 ) page： 897-902 2012.10

Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates Reviewed

M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3201–3205 2012.2

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3279–3282 2012.2

Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3397–3401 2012.2

Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates Reviewed

O. Nakatsuka, M. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3288–3292 2012.2

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3279–3282 2012.2

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Reviewed

Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima

Thin Solid Films Vol. 520 ( 8 ) page： 3206–3210 2012.2

Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn Reviewed

Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima

Appl. Phys. Express Vol. 5 page： 015501 2012.1

Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed

Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 51 page： 01AJ01 2012.1

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique Reviewed

K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 50 ( 10 ) page： 10PE02 (7 pages) 2011.10

Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films Reviewed

M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai

Jpn. J. Appl. Phys. Vol. 50 ( 8 ) page： 08LB11 (4 pages) 2011.8

Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems Reviewed

T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics Vol. 60 ( 1 ) page： 46-52 2011.6

Control of Strain Relaxation Behavior of Ge1-xSnx Layers Reviewed

Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Solid-State Electronics Vol. 60 ( 1 ) page： 84-88 2011.6

Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen Reviewed

K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima

Solid-State Electronics Vol. 60 ( 1 ) page： 70-74 2011.6

Ge1-xSnx stressors for strained-Ge CMOS Invited Reviewed

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics Vol. 60 ( 1 ) page： 53-57 2011.6

Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts Reviewed

T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima

Microelectron. Eng. Vol. 88 ( 5 ) page： 605-609 2011.5

Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction Reviewed

O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima

pn. J. Appl. Phys. Vol. 50 page： 05ED03 2011.5

Formation of Palladium Silicide Thin Layers on Si(110) Substrates Reviewed

R. Suryana, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 50 page： 05EA09 2011.5

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer Reviewed

C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax

Appl. Phys. Lett. Vol. 98 page： 192110 2011.5

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Reviewed

B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo

,Microelectron. Eng. Vol. 88 ( 4 ) page： 342-346 2011.4

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed

M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 50 page： 04DA08 2011.4

Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys. Vol. 50 page： 04DA17 2011.4

Pr酸化膜/Si構造へのAl導入による界面反応抑制効果

古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 51-54 2011.1

電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明

足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 123-126 2011.1

Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響

加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 99-102 2011.1

Al2O3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御

加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会 page： 55-58 2011.1

GeSn Technology: Impact of Sn on Ge CMOS Applications Invited Reviewed

S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo

ECS Trans. Vol. 41 ( 7 ) page： 231-238 2011

Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

Thin Solid Films Vol. 518 ( 6 ) page： S2-S5 2010

Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer Reviewed

R. Suruyana, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. Vol. 49 page： 05FA09 (5 pages) 2010

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates Reviewed

O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima

Jpn. J. Appl. Phys. Vol. 49 page： 04DA10 (4 pages) 2010

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing Reviewed

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

Thin Solid Films Vol. 518 ( 6 ) page： S147-W150 2010

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima

Solid-State Electronics Vol. 53 ( 11 ) page： 1198-1201 2009.11

Microstructures in directly bonded Si substrates Reviewed

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

Solid-State Electronics Vol. 53 ( 8 ) page： 837-840 2009.8

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 48 Vol. 48 page： 04C130 2009.4

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates Reviewed

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. Vol. 48 page： 021208 2009.2

Language：English Publishing type：Research paper (scientific journal)

We investigated the interface structure of directly bonded Si(011)/Si(001) substrates prepared by conventional bonding and grind-back. The interfacial structure was analyzed by transmission electron microscopy (TEM) and in-plane X-ray diffraction (XRD). The plan-view and cross-sectional TEM observations provided evidence that screw dislocation lines were localized to the interfacial plane and that threading dislocations were absent. Grazing-incidence in-plane XRD analyses confirmed the existence of mosaic structures at the interface. These structures were formed because of the deformation field produced by the screw dislocations. This allowed a high level of crystallinity to be maintained in regions away from the interface in both the Si(011) layer and the Si(001) wafer.

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface Reviewed

E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaim

Jpn. J. Appl. Phys. Vol. 48 page： 011202-1-5 2009.1

Language：English Publishing type：Research paper (scientific journal)

Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J Vol. 34 ( 2 ) page： 301-304 2009

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units Reviewed

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films Vol. 518 ( 3 ) page： 1006-1011 2009

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) Reviewed

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett. Vol. 102 page： 137204 (4 pages) 2009

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J Vol. 34 ( 2 ) page： 305-308 2009

*Silicide and germanide technology for contacts and gates in MOSFET applications Invited Reviewed

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films Vol. 517 ( 1 ) page： 80-83 2008.8

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates Reviewed

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films Vol. 517 ( 1 ) page： 323-326 2008.8

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates Reviewed

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films Vol. 517 ( 1 ) page： 159-162 2008.8

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method Reviewed

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett. Vol. 92 page： 231916 2008.6

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci. Vol. 47 page： 3742-3747 2008.5

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System Reviewed

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys. Vol. 47 ( 4 ) page： 2402-2406 2008.4

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates Reviewed

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci. Vol. 254 ( 19 ) page： 6048-60651 2008.3

Effect of alcohol sources on synthesis of single-walled carbon nanotubes Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci. Vol. 254 ( 23 ) page： 7697-7702 2008.2

Ge基板上に作製したPr酸化膜の評価 Reviewed

坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会） page： 237-242 2008.2

Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems Reviewed

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Advanced Metallization Conference (AMC) page： 101-105 2008

Interface and defect control for group IV channel engineering

A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, S. Kimura

ECS Transactions Vol. 16 ( 10 ) page： 687-698 2008

パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会） page： 251-256 2007.2

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. Vol. 22 ( 1 ) page： S132-S136 2007.1

Language：English Publishing type：Research paper (scientific journal)

We have investigated dislocation morphology and strain relaxation mechanisms of SiGe and Ge sub-micron wide striped mesa lines patterned on Si(0 0 1) substrates. The patterning of SiGe and Ge layers principally leads to asymmetric elastic strain relaxation. Post-patterning anneal induces 60° dislocation introduction to relax the strain but the narrower the line width the more dominant is the elastic strain relaxation. In the case of 250 nm wide SiGe lines, 60° dislocation introduction along the line is critically suppressed so that asymmetric strain distribution is realized. On the other hand, for the Ge line structure, pre-formed pure edge dislocations elongate along both orthogonal directions at the heterointerface independent of the line geometry even with the line width of 250 nm. Thus strain relaxation occurs symmetrically and rigidly. These results can be explained by deference of the introduction and propagation mechanisms of 60° and pure-edge dislocations.

Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価

山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会） page： 197-202 2007.1

Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates Reviewed

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima

Semicond. Sci. Tech. Vol. 22 ( 1 ) page： S231-S235 2007.1

Language：English Publishing type：Research paper (scientific journal)

We have performed growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on Si(0 0 1), virtual Ge(0 0 1) and bulk Ge(0 0 1) substrates. In the case of Si(0 0 1), amorphous Ge1-xSnx phases are partially formed as well as many threading dislocations in Ge0.98Sn0.02 layers. Employing virtual Ge substrates to reduce the lattice mismatch at the interface leads to epitaxial Ge0.978Sn0.022 layers with a flat surface. Most of threading dislocations in the Ge0.978Sn0.022 layer comes from pre-existing ones in the virtual Ge substrate and propagates laterally, leaving misfit segments at the Ge0.978Sn0.022/virtual Ge interface, after post-deposition annealing (PDA). This simultaneously results in the reduction of threading dislocation density and the promotion of strain relaxation. In the case of bulk Ge(0 0 1), although low threading dislocation density can be achieved, less than 106 cm-2, the film exhibits surface undulation and a lesser degree of strain relaxation even after PDA.

Silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ECS Transactions Vol. 11 ( 6 ) page： 197-205 2007

Impact of Pt incorporation on thermal stability of NiGe layers on Ge(001) substrates

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 page： 87-88 2007

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system Reviewed

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima

Microelectron. Eng. Vol. 83 ( 11-12 ) page： 2272-2276 2006.11

Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications Invited

O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa

Proceedings of the 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors page： 31-37 2006.10

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates Reviewed

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa and S. Zaima

Thin Solid Films Vol. 508 ( 1-2 ) page： 147-151 2006.6

Language：English Publishing type：Research paper (scientific journal)

A thin strain-relaxed SiGe buffer layer with pure-edge dislocations has been grown on a silicon-on-insulator (SOI) substrate by using low-temperature epitaxy of Ge and subsequent high-temperature annealing. The dislocation morphology and crystalline mosaicity of the strain-relaxed SiGe layers has been measured, and the influence of the thickness of the SiGe and SOI layers on these features has been investigated. Behavior of the dislocations introduced from the interface between the SiGe and the buried oxide layers during high-temperature annealing shows a high dependence on the thickness of the SOI layer. This SOI thickness dependence can be explained by considering the effects of the image force exerted on the dislocations. A higher temperature anneal and a thinner SOI layer are both found to reduce the crystalline mosaicity.

*Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction Reviewed

S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima

Thin Solid Films Vol. 508 ( 1-2 ) page： 128-131 2006.6

Language：English Publishing type：Research paper (scientific journal)

We have investigated, using X-ray microdiffraction, local strain and crystalline texture in SiGe layers fabricated under various growth conditions on Si(001) substrates. Two-dimensional reciprocal space maps and contour maps in a series of the X-ray rocking curves were taken from the SiGe layers with misfit dislocations having either a 60 degrees or pure-edge character. Quantitative analysis for fine structures observed in the diffraction peak revealed that crystal domains with sizes ranging from 50 nm to 200 nm at tilt angles from 0.00 degrees to 0.42 degrees with respect to the Si[001] direction are formed in the layer relaxed with 60 degrees dislocations. Furthermore, nonuniformity of crystalline texture having a size of 2 to 4 μm was also detected. On the other hand, no remarkable domain structures were detected from diffraction profiles when the sample is predominantly strain-relaxed by pure-edge dislocations. In this case, homogeneous strain distribution with reduced mosaicity is realized in the micrometer-sized regions.

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition Reviewed

Y. Okuda, S. Naito, O. Nakatsuka, H. Kondo, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 45 ( 1A ) page： 49-53 2006.1

Language：English Publishing type：Research paper (scientific journal)

We have investigated the crystalline and electrical properties of Ni silicide/Si and SiGeC contacts for ULSI applications. NiSi/Si contacts promises the contact resistivity as low as 10-8 ohm-cm2 for both n+- and p+-Si. Degradation of the sheet resistance of NiSi layers critically depends on the annealing time particularly at temperatures ranging from 650 deg.C to 750 deg.C. The enlargement of the Si-exposed region concomitant with the NiSi agglomeration is a dominant factor responsible for the increase in sheet resistance and the activation energy of this process is estimated to be 2.8±0.4 eV. Incorporation of Ge into Ni/Si systems is effective in raising the transformation temperature from NiSi to NiSi2. Incorporation of C into NiSi/Si system effectively suppresses the NiSi agglomeration. C introduction also causes the pile-up of B atoms at the NiSi/Si interface, which promises the reduction of the contact resistivity.

Dislocation morphology and crystalline mosaicity in strain-relaxed SiGe buffer layers on SOI

A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima

IEEJ Transactions on Electronics, Information and Systems Vol. 126 ( 9 ) page： 1083-1087 2006

Ni silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings page： 322-325 2006

Scanning tunneling microscopy study on the reaction of oxygen with clean Ge(001) surfaces

A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, M. Ogawa

ECS Transactions Vol. 2 ( 7 ) page： 1197-1203 2006

Thermal stability and electrical properties of Ni-silicide on C-incorporated Si Reviewed

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda

Proc. of Advanced Metallization Conference 2004 (AMC2004) page： 293-298 2005.10

*Low Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems Reviewed

O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 44 ( 5A ) page： 2945-2947 2005

Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)

The solid-phase epitaxial growth of NiSi2 in Ni/Ti/Si systems has been investigated. Continuous epitaxial NiSi2 layers consisting of pyramidal domains with {111} facets at the Ni-silicide/Si interface can be formed by annealing at a temperature (350 deg.C) lower than that for conventional Ni/Si systems. This NiSi2 layer is transformed to a uniform epitaxial NiSi2 layer with an atomically flat silicide/Si interface by additional annealing at 850deg.C, while the {111} facets at the NiSi2/Si interface remains in the Ni/Si system under the same annealing conditions. Moreover, the epitaxial NiSi2 layer formed at 350 deg.C exhibits a high thermal robustness even after annealing at higher than 750 deg.C, in contrast to the polycrystalline NiSi layer.

Initial growth behaviors of SiGeC in SiGe and C alternate deposition Reviewed

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing Vol. 8 ( 1-3 ) page： 5-9 2005

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations Reviewed

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing Vol. 8 ( 1-3 ) page： 131-135 2005

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems Reviewed

A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda

Appl. Phys. Lett. Vol. 86 page： 221916-221918 2005

SiGeバッファ層の歪緩和および転位構造制御 Reviewed

田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明

日本結晶成長学会誌 Vol. 32 page： 89-98 2005

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates Reviewed

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi

Jpn. J. Appl. Phys. Vol. 44 ( 10 ) page： 7356-7363 2005

*Improvement in NiSi/Si contact properties with C-implantation Reviewed

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima

Microelectronic Engineering Vol. 82 ( 3-4 ) page： 479-484 2005

Influence of structural variation of Ni silicide thin films on electrical property for contact materials Reviewed

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 43 ( 4B ) page： 1896-1900 2004

Si及びSi1-x-yGexCy上のNiシリサイド形成 Invited

中塚理, 酒井朗, 財満鎭明

電気学会研究会資料電子材料研究会 Vol. EFM-04 ( 41-48 ) page： 25-30 2004

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) Reviewed

E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 237 ( 1-4 ) page： 150-155 2004

Language：English Publishing type：Research paper (scientific journal)

The initial growth of NiSi2 on Si(1 0 0) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts Reviewed

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 215-221 2004

Language：English Publishing type：Research paper (scientific journal)

We have investigated the interfacial solid-phase reaction and electrical properties of Ni/Si and Ni/SiGeC systems with various Ge and C compositions. The incorporation of Ge into Si substrates raised the transition temperature from the NiSi phase to the NiSi2 phase. The incorporation of C effectively suppresses the agglomeration of NiSi and the formation of {1 1 1} facets at NiSi2/Si interface, which provides the low sheet resistance even after high temperature annealing. NiSi/Si systems show the contact resistivity as low as 1E-8 Ω sq.cm for both n+- and p+-type contacts. This is accounted by the pile-up of P at the NiSi/Si interface for n+-type and the low Schottky barrier height for p+-type contact. The pile-up of B at the NiSi/p+-Si0.996C0.004 interface after the annealing at 750deg.C is also found.

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) Reviewed

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 117-121 2004

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer Reviewed

T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda,

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 108-112 2004

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates Reviewed

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 104-107 2004

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems Reviewed

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett. Vol. 83 ( 5 ) page： 1005-1007 2003

Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC Reviewed

R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami

Mater. Sci. Eng. B Vol. 98 ( 3 ) page： 286-293 2003

Effect of Al interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) Reviewed

O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 216 ( 1-4 ) page： 174-180 2003

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals Reviewed

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda,

Rapid Thermal Processing for Future Semiconductor Devices page： 29-35 2003

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen Reviewed

R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 42 ( 4B ) page： 1966-1970 2003

Electrical properties and solid-phase reactions in Ni/Si(100) contacts Reviewed

Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 41 ( 4B ) page： 2450-2454 2002

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC Reviewed

O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami

Mater. Trans. Vol. 43 ( 7 ) page： 1684-1688 2002

CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC Reviewed

O. Nakatsuka, Y. Koide, and M. Murakami

Proc. of Silicon Carbide and Related Materials 2001 (MATERIALS SCIENCE FORUM) Vol. 389 ( 3 ) page： 885-888 2002

Electrical properties of Ni silicide/Si contact Reviewed

Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization Conference 2001 (AMC2001) page： 679-684 2001

Dependence of contact resistivity on impurity concentration in Co/Si systems Reviewed

O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 159-160 page： 149-153 2000

Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Invited Reviewed

Y. Yasuda, O. Nakatsuka, and S. Zaima

Thin Solid Films Vol. 373 page： 73-78 2000

Contact resistivities and electrical properties of Co/Si contacts by rapid thermal annealing Reviewed

O. Nakatsuka, T. Ashizawa, H. Iwano, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 page： 605-611 1999

Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts Reviewed

H. Iwano, H. Hayashi, M. Yoshinaga, O. Nakatsuka, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 page： 599-604 1999

Conductance oscillations in hopping conduction systems fabricated by focus ion beam implantation Reviewed

H. Kondo, H. Iwano, O. Nakatsuka, K. Kaga, S. Zaima, and Y Yasuda

Jpn. J. Appl. Phys. Vol. 36 ( 6B ) page： 4046-4048 1997

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