Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

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ゲルマニウムスズⅣ族混晶薄膜の結晶成長と電子物性 Invited Reviewed

中塚理, 黒澤昌志

応用物理 Vol. 88 ( 9 ) page： pp. 597-603 2019.9

Growth and applications of GeSn-related group-IV semiconductor materials Invited Reviewed

S. Zaima, O. Nakatsuka, N. Taoka, M. Kuorsawa, W. Takeuchi, and M. Sakashita

Sci. Technol. Adv. Mater. Vol. 16 page： 043502 (22pages) 2015.7

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys Reviewed

Nagae, Y; Kurosawa, M; Shiraishi, K; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 2 ) 2025.2

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique Reviewed

Maeda, T; Ishii, H; Chang, WH; Takagi, K; Shibayama, S; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 64 ( 1 ) 2025.1

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure Reviewed

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 13 page： 79 - 85 2025

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure (vol 13, pg 79, 2025) Reviewed

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Vol. 13 page： 134 - 134 2025

Epitaxial growth of Ge1-xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation Reviewed

Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS Vol. 17 ( 11 ) 2024.11

Ge1-xSnx layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping Reviewed

Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 176 2024.6

Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films Reviewed

Maeda, T; Ishii, H; Chang, WH; Zhang, SY; Shibayama, S; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 176 2024.6

Tensile-strained Ge1-xSnx layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction Reviewed

Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 63 ( 4 ) 2024.4

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method Reviewed

Nagano, J; Ikeguchi, S; Doi, T; Sakashita, M; Nakatsuka, O; Shibayama, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 163 2023.8

Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence Reviewed

Hashimoto, K; Shibayama, S; Asaka, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 7 ) 2023.7

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing Reviewed

Okada, K; Shibayama, S; Sakashita, M; Nakatsuka, O; Kurosawa, M

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 161 2023.7

Lattice-matched growth of high-Sn-content (x∼0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy Reviewed

Fujimoto, K; Kurosawa, M; Shibayama, S; Sakashita, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS Vol. 16 ( 4 ) 2023.4

Crystalline and optoelectronic properties of Ge1-xSnx/high-Si-content-SiyGe1-x-ySnx double-quantum wells grown with low-temperature molecular beam epitaxy Reviewed

Zhang, SY; Shibayama, S; Nakatsuka, O

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 38 ( 1 ) 2023.1

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1-x-y Si x Sn y epitaxial layers grown on GaAs(001) Reviewed

Kurosawa, M; Nakata, M; Zhan, TZ; Tomita, M; Watanabe, T; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( 8 ) 2022.8

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed

Itoh, M; Araidai, M; Ohta, A; Nakatsuka, O; Kurosawa, M

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface Reviewed

Kagoshima, E; Takeuchi, W; Kutsuki, K; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride Reviewed

Niwa, K; Iizuka, T; Kurosawa, M; Nakamura, Y; Valencia, HO; Kishida, H; Nakatsuka, O; Sasaki, T; Gaida, NA; Hasegawa, M

AIP ADVANCES Vol. 12 ( 5 ) 2022.5

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction Reviewed

Takeuchi, W; Kagoshima, E; Sumitani, K; Imai, Y; Shibayama, S; Sakashita, M; Kimura, S; Tomita, H; Nishiwaki, T; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 61 ( SC ) 2022.5

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Papers - NAKATSUKA, Osamu