Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

Division display 61 - 80 of about 286 ／ All the affair displays >>

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si Reviewed

Gupta S., Shimura Y., Richard O., Douhard B., Simoen E., Bender H., Nakatsuka O., Zaima S., Loo R., Heyns M.

APPLIED PHYSICS LETTERS Vol. 113 ( 19 ) 2018.11

Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Reviewed

Nakatsuka Osamu, Suzuki Akihiro, McVittie James, Nishi Yoshio, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed

Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma Reviewed

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS Vol. 112 ( 6 ) 2018.2

Epitaxial growth of heavily doped n(+)-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

THIN SOLID FILMS Vol. 645 page： 57 - 63 2018.1

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed

Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition Reviewed

Takeuchi Wakana, Washizu Tomoya, Ike Shinichi, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering Reviewed

Peng Ying, Miao Lei, Li Chao, Huang Rong, Urushihara Daisuke, Asaka Toru, Nakatsuka Osamu, Tanemura Sakae

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor Reviewed

Doi Takuma, Takeuchi Wakana, Jin Yong, Kokubun Hiroshi, Yasuhara Shigeo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1

The morphological study of porous silicon formed by electrochemical anodization method

Suryana R., Sandi D. K., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2017 Vol. 333 2018

A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed

Kurosawa Masashi, Imai Yukihiro, Iwahashi Taisei, Takahashi Kouta, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 Vol. 86 ( 7 ) page： 321 - 328 2018

In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 12 ) 2017.12

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed

Kurosawa Masashi, Kato Motohiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS Vol. 111 ( 19 ) 2017.11

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices Reviewed

K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 12-16 2017.11

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed

A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 162-166 2017.11

Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 156-161 2017.11

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 151-155 2017.11

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz Reviewed

Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. Vol. 70 ( 1 ) page： 133-138 2017.11

　 PREV - NEXT 　

<NAKATSUKA, Osamu>

Papers - NAKATSUKA, Osamu