Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

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Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations Reviewed

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing Vol. 8 ( 1-3 ) page： 131-135 2005

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems Reviewed

A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda

Appl. Phys. Lett. Vol. 86 page： 221916-221918 2005

SiGeバッファ層の歪緩和および転位構造制御 Reviewed

田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明

日本結晶成長学会誌 Vol. 32 page： 89-98 2005

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates Reviewed

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi

Jpn. J. Appl. Phys. Vol. 44 ( 10 ) page： 7356-7363 2005

*Improvement in NiSi/Si contact properties with C-implantation Reviewed

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima

Microelectronic Engineering Vol. 82 ( 3-4 ) page： 479-484 2005

Influence of structural variation of Ni silicide thin films on electrical property for contact materials Reviewed

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 43 ( 4B ) page： 1896-1900 2004

Si及びSi1-x-yGexCy上のNiシリサイド形成 Invited

中塚理, 酒井朗, 財満鎭明

電気学会研究会資料電子材料研究会 Vol. EFM-04 ( 41-48 ) page： 25-30 2004

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) Reviewed

E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 237 ( 1-4 ) page： 150-155 2004

Language：English Publishing type：Research paper (scientific journal)

The initial growth of NiSi2 on Si(1 0 0) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts Reviewed

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 215-221 2004

Language：English Publishing type：Research paper (scientific journal)

We have investigated the interfacial solid-phase reaction and electrical properties of Ni/Si and Ni/SiGeC systems with various Ge and C compositions. The incorporation of Ge into Si substrates raised the transition temperature from the NiSi phase to the NiSi2 phase. The incorporation of C effectively suppresses the agglomeration of NiSi and the formation of {1 1 1} facets at NiSi2/Si interface, which provides the low sheet resistance even after high temperature annealing. NiSi/Si systems show the contact resistivity as low as 1E-8 Ω sq.cm for both n+- and p+-type contacts. This is accounted by the pile-up of P at the NiSi/Si interface for n+-type and the low Schottky barrier height for p+-type contact. The pile-up of B at the NiSi/p+-Si0.996C0.004 interface after the annealing at 750deg.C is also found.

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) Reviewed

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 117-121 2004

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer Reviewed

T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda,

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 108-112 2004

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates Reviewed

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda

Appl. Surf. Sci. Vol. 224 ( 1-4 ) page： 104-107 2004

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems Reviewed

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett. Vol. 83 ( 5 ) page： 1005-1007 2003

Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC Reviewed

R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami

Mater. Sci. Eng. B Vol. 98 ( 3 ) page： 286-293 2003

Effect of Al interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) Reviewed

O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. Vol. 216 ( 1-4 ) page： 174-180 2003

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals Reviewed

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda,

Rapid Thermal Processing for Future Semiconductor Devices page： 29-35 2003

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen Reviewed

R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 42 ( 4B ) page： 1966-1970 2003

Electrical properties and solid-phase reactions in Ni/Si(100) contacts Reviewed

Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. Vol. 41 ( 4B ) page： 2450-2454 2002

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC Reviewed

O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami

Mater. Trans. Vol. 43 ( 7 ) page： 1684-1688 2002

CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC Reviewed

O. Nakatsuka, Y. Koide, and M. Murakami

Proc. of Silicon Carbide and Related Materials 2001 (MATERIALS SCIENCE FORUM) Vol. 389 ( 3 ) page： 885-888 2002

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