Papers - NAKATSUKA, Osamu
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Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 139 - 144 2017.11
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Sii(1-x)Ge(x) bulk single crystals for substrates of electronic devices Reviewed
Kinoshita Kyoichi, Arai Yasutomo, Maeda Tatsuro, Nakatsuka Osamu
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 12 - 16 2017.11
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Fukuda, M; Yamaha, T; Asano, T; Fujinami, S; Shimura, Y; Kurosawa, M; Nakatsuka, O; Zaima, S
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 156 - 161 2017.11
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Growth and Applications of Si1-xSnx Thin Films Invited Reviewed
M. Kurosawa, O. Nakatsuka, and S. Zaima
ECS Trans. Vol. 8 ( 4 ) page： 253-258 2017.10
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Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 32 ( 10 ) 2017.10
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Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition Reviewed
T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima
J. Crystal Growth Vol. 468 page： 614-619 2017.7
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Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 4 ) 2017.4
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4H-SiC MOSキャパシタのAlON絶縁膜のリーク電流特性に窒素結合状態が与える効果
竹内和歌奈, 山本建策, 三村智博, 坂下満男, 中塚理, 財満鎭明
特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回） page： 127-130 2017.1
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水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化
高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回） page： 67-70 2017.1
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金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果
鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明
特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回） page： 63-66 2017.1
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Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effect on crystalline and photoluminescence properties Reviewed
O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 ( 1S ) page： 01AB05 (6 pages) 2017.1
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Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties Reviewed
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 56 ( 1S ) page： 01AB02 (7 pages) 2017.1
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Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 57 page： 48 - 53 2017.1
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Nakatsuka, O; Fujinami, S; Asano, T; Koyama, T; Kurosawa, M; Sakashita, M; Kishida, H; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Yano, S; Yamaha, T; Shimura, Y; Takeuchi, W; Sakashita, M; Kurosawa, M; Nakatsuka, O; Zaima, S
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 56 ( 1 ) 2017.1
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Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration Reviewed
N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder
Mater. Sci. Semicond. Proc. Vol. 57 page： 48-53 2017
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Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) page： 249 - 251 2017
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Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction Reviewed
S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima
ECS Trans. Vol. 75 ( 8 ) page： 769-775 2016.10
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Influence of GeO2 deposition temperature by in atomic layer deposition on electrical properties of Ge gate stack+K12 Reviewed
M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 8S2 ) page： 08PC05 (5 pages) 2016.8
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Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed
Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
Jpn. J. Appl. Phys. Vol. 55 ( 8S2 ) page： 08PE04 (4 pages) 2016.8