Papers - NAKATSUKA, Osamu
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Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(1 1 0) substrates
T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima
Solid-State Electron. Vol. 83 page： 71-75 2013.5
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Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Solid-State Electron. Vol. 83 page： 56-60 2013.5
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Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 52 page： 04CA08 (7 pages) 2013.4
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Influence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) Substrates Reviewed
T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 531 page： 504-508 2013.3
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Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film Reviewed
W. Takeuchi, K. Furuta, K .Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
J. Phys.: Conf. Ser. Vol. 417 page： 012017 (6 pages) 2013.3
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Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed
K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
J. Phys.: Conf. Ser. Vol. 417 page： 012001 2013.3
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Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 52 page： 01AC04 2013.1
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Al2O3/Ge構造に対する熱酸化機構の解明
柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 39-42 2013.1
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Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響
加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 155-158 2013.1
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テ トラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成
吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会） page： 151-154 2013.1
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Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(0 0 1) substrates Reviewed
T. Shinoda, O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima
Appl. Surf. Sci. Vol. 259 ( 15 ) page： 754-757 2012.10
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Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy Reviewed
T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima
ECS Trans. Vol. 50 ( ９ ) page： 907-913 2012.10
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Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content Invited Reviewed
S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
ECS Trans. Vol. 50 ( 9 ) page： 897-902 2012.10
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Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates Reviewed
M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3201–3205 2012.2
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Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed
K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3279–3282 2012.2
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Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3397–3401 2012.2
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Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates Reviewed
O. Nakatsuka, M. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3288–3292 2012.2
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Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed
K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3279–3282 2012.2
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In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Reviewed
Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima
Thin Solid Films Vol. 520 ( 8 ) page： 3206–3210 2012.2
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Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn Reviewed
Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima
Appl. Phys. Express Vol. 5 page： 015501 2012.1