Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

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Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer Reviewed

R. Suruyana, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. Vol. 49 page： 05FA09 (5 pages) 2010

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates Reviewed

O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima

Jpn. J. Appl. Phys. Vol. 49 page： 04DA10 (4 pages) 2010

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing Reviewed

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

Thin Solid Films Vol. 518 ( 6 ) page： S147-W150 2010

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima

Solid-State Electronics Vol. 53 ( 11 ) page： 1198-1201 2009.11

Microstructures in directly bonded Si substrates Reviewed

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

Solid-State Electronics Vol. 53 ( 8 ) page： 837-840 2009.8

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 48 Vol. 48 page： 04C130 2009.4

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates Reviewed

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys. Vol. 48 page： 021208 2009.2

Language：English Publishing type：Research paper (scientific journal)

We investigated the interface structure of directly bonded Si(011)/Si(001) substrates prepared by conventional bonding and grind-back. The interfacial structure was analyzed by transmission electron microscopy (TEM) and in-plane X-ray diffraction (XRD). The plan-view and cross-sectional TEM observations provided evidence that screw dislocation lines were localized to the interfacial plane and that threading dislocations were absent. Grazing-incidence in-plane XRD analyses confirmed the existence of mosaic structures at the interface. These structures were formed because of the deformation field produced by the screw dislocations. This allowed a high level of crystallinity to be maintained in regions away from the interface in both the Si(011) layer and the Si(001) wafer.

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface Reviewed

E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaim

Jpn. J. Appl. Phys. Vol. 48 page： 011202-1-5 2009.1

Language：English Publishing type：Research paper (scientific journal)

Directly bonded interfaces of hydrophilic and hydrophobic Si(100) wafers were studied from the viewpoint of bonding energy and chemical products as a function of the annealing temperature. The experimental results indicated that for both hydrophilic and hydrophobic Si/Si bonded wafer pairs, the behavior of the bubbles at the bonding interface and the bonding energy were closely related to the behavior of the hydrogen and oxygen atoms at the bonding interface. The bonding mechanisms for both cases have been discussed on the basis of the chemical reactions induced by the annealing temperature.

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J Vol. 34 ( 2 ) page： 301-304 2009

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units Reviewed

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films Vol. 518 ( 3 ) page： 1006-1011 2009

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) Reviewed

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett. Vol. 102 page： 137204 (4 pages) 2009

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J Vol. 34 ( 2 ) page： 305-308 2009

*Silicide and germanide technology for contacts and gates in MOSFET applications Invited Reviewed

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films Vol. 517 ( 1 ) page： 80-83 2008.8

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates Reviewed

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films Vol. 517 ( 1 ) page： 323-326 2008.8

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates Reviewed

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films Vol. 517 ( 1 ) page： 159-162 2008.8

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method Reviewed

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett. Vol. 92 page： 231916 2008.6

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci. Vol. 47 page： 3742-3747 2008.5

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System Reviewed

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys. Vol. 47 ( 4 ) page： 2402-2406 2008.4

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates Reviewed

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci. Vol. 254 ( 19 ) page： 6048-60651 2008.3

Effect of alcohol sources on synthesis of single-walled carbon nanotubes Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci. Vol. 254 ( 23 ) page： 7697-7702 2008.2

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