Papers - NAKATSUKA, Osamu
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Electrical properties of Ni silicide/Si contact Reviewed
Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda
Proc. of Advanced Metallization Conference 2001 (AMC2001) page： 679-684 2001
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Dependence of contact resistivity on impurity concentration in Co/Si systems Reviewed
O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda
Appl. Surf. Sci. Vol. 159-160 page： 149-153 2000
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Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Invited Reviewed
Y. Yasuda, O. Nakatsuka, and S. Zaima
Thin Solid Films Vol. 373 page： 73-78 2000
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Contact resistivities and electrical properties of Co/Si contacts by rapid thermal annealing Reviewed
O. Nakatsuka, T. Ashizawa, H. Iwano, S. Zaima, and Y. Yasuda
Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 page： 605-611 1999
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Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts Reviewed
H. Iwano, H. Hayashi, M. Yoshinaga, O. Nakatsuka, S. Zaima, and Y. Yasuda
Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 page： 599-604 1999
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Conductance oscillations in hopping conduction systems fabricated by focus ion beam implantation Reviewed
H. Kondo, H. Iwano, O. Nakatsuka, K. Kaga, S. Zaima, and Y Yasuda
Jpn. J. Appl. Phys. Vol. 36 ( 6B ) page： 4046-4048 1997