Faculty Profiles - NAKATSUKA, Osamu

Papers - NAKATSUKA, Osamu

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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed

Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed

Peng Ying, Miao Lei, Gao Jie, Liu Chengyan, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SCIENTIFIC REPORTS Vol. 9 2019.10

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. Vol. 92 ( 4 ) page： 41-46 2019.10

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

Vol. 119 ( 96 ) page： 5-9 2019.6

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報 Vol. 119 ( 96 ) page： 17-20 2019.6

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi

APPLIED PHYSICS EXPRESS Vol. 12 ( 5 ) 2019.5

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4

Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition Reviewed

Miki Yusuke, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

Kurosawa Masashi, Inaishi Yu, Tange Ryuji, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( SA ) 2019.2

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 Reviewed

Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) page： . 2019

Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) Reviewed

Pratiwi Nur'aini Dian, Handayani Mita, Suryana Risa, Nakatsuka Osamu

MATERIALS TODAY-PROCEEDINGS Vol. 13 page： 92 - 96 2019

Patterned Porous Silicon Prepared by Reactive Ion Etching Technique Reviewed

Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018 Vol. 578 2019

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures Reviewed

Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact Reviewed

Deng Yunsheng, He Dongsheng, Qiu Yang, Gu Rui, He Jiaqing, Nakatsuka Osamu

APPLIED PHYSICS LETTERS Vol. 113 ( 25 ) 2018.12

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n(+)-Ge1-xSnx structure Reviewed

Jeon Jihee, Suzuki Akihiro, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors Reviewed

Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 12 ) 2018.12

Optoelectronic properties of high-Si-content-Gel-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

Ultra-thin germanium-tin on insulator structure through direct bonding technique Reviewed

Maeda Tatsuro, Chang Wen Hsin, Irisawa Toshifumi, Ishii Hiroyuki, Oka Hiroshi, Kurosawa Masashi, Imai Yukihiro, Nakatsuka Osamu, Uchida Noriyuki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY Vol. 33 ( 12 ) 2018.12

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Papers - NAKATSUKA, Osamu