研究者詳細 - 中塚理

論文 - 中塚理

分割表示 286 件中 61 - 80 件目／全件表示 >>

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si 査読有り

Gupta, S; Shimura, Y; Richard, O; Douhard, B; Simoen, E; Bender, H; Nakatsuka, O; Zaima, S; Loo, R; Heyns, M

APPLIED PHYSICS LETTERS 113 巻 ( 19 ) 2018年11月

Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties 査読有り

Nakatsuka, O; Suzuki, A; McVittie, J; Nishi, Y; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 7 ) 2018年7月

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge 査読有り

Suzuki, A; Nakatsuka, O; Sakashita, M; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma 査読有り

Yamamoto, T; Taoka, N; Ohta, A; Truyen, NX; Yamada, H; Takahashi, T; Ikeda, M; Makihara, K; Nakatsuka, O; Shimizu, M; Miyazaki, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water 査読有り

Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water 査読有り

Takahashi, K; Kurosawa, M; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S

APPLIED PHYSICS LETTERS 112 巻 ( 6 ) 2018年2月

Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping 査読有り

Ike, S; Takeuchi, W; Nakatsuka, O; Zaima, S

THIN SOLID FILMS 645 巻頁： 57 - 63 2018年1月

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor 査読有り

Takeuchi, W; Yamamoto, K; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition 査読有り

Takeuchi, W; Washizu, T; Ike, S; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering 査読有り

Peng, Y; Miao, L; Li, C; Huang, R; Urushihara, D; Asaka, T; Nakatsuka, O; Tanemura, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor 査読有り

Doi, T; Takeuchi, W; Jin, Y; Kokubun, H; Yasuhara, S; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月

The morphological study of porous silicon formed by electrochemical anodization method

Suryana R., Sandi D. K., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2017 333 巻 2018年

A New Application of Ge1-xSnx: Thermoelectric Materials 査読有り

Kurosawa, M; Imai, Y; Iwahashi, T; Takahashi, K; Sakashita, M; Nakatsuka, O; Zaima, S

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8 86 巻 ( 7 ) 頁： 321 - 328 2018年

In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition 査読有り

Ike, S; Takeuchi, W; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32 巻 ( 12 ) 2017年12月

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates 査読有り

Kurosawa, M; Kato, M; Takahashi, K; Nakatsuka, O; Zaima, S

APPLIED PHYSICS LETTERS 111 巻 ( 19 ) 2017年11月

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices 査読有り

K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 12-16 2017年11月

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers 査読有り

A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 162-166 2017年11月

Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers 査読有り

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 156-161 2017年11月

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate 査読有り

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 151-155 2017年11月

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz 査読有り

Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc. 70 巻 ( 1 ) 頁： 133-138 2017年11月

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