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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor 査読有り

Takeuchi, W; Kutsuki, K; Kagoshima, E; Onishi, T; Iwasaki, S; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation 査読有り

Peng, Y; Miao, L; Gao, J; Liu, CY; Kurosawa, M; Nakatsuka, O; Zaima, S

SCIENTIFIC REPORTS 9 巻 2019年10月

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications 招待有り査読有り

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans. 92 巻 ( 4 ) 頁： 41-46 2019年10月

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate 査読有り

Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

119 巻 ( 96 ) 頁： 5-9 2019年6月

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報 119 巻 ( 96 ) 頁： 17-20 2019年6月

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process 査読有り

Takahashi, K; Ikenoue, H; Sakashita, M; Nakatsuka, O; Zaima, S; Kurosawa, M

APPLIED PHYSICS EXPRESS 12 巻 ( 5 ) 2019年5月

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment 査読有り

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) 査読有り

Doi, T; Takeuchi, W; Shibayama, S; Sakashita, M; Taoka, N; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年4月

Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition 査読有り

Miki, Y; Takeuchi, W; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination 査読有り

Kurosawa, M; Inaishi, Y; Tange, R; Sakashita, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 査読有り

Senga, K; Shibayama, S; Sakashita, M; Zaima, S; Nakatsuka, O

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 頁： . 2019年

Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) 査読有り

Pratiwi, ND; Handayani, M; Suryana, R; Nakatsuka, O

MATERIALS TODAY-PROCEEDINGS 13 巻頁： 92 - 96 2019年

Patterned Porous Silicon Prepared by Reactive Ion Etching Technique 査読有り

Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018 578 巻 2019年

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures 査読有り

Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S

2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019年

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact 査読有り

Deng, YS; He, DS; Qiu, Y; Gu, R; He, JQ; Nakatsuka, O

APPLIED PHYSICS LETTERS 113 巻 ( 25 ) 2018年12月

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1-xSnx structure 査読有り

Jeon, J; Suzuki, A; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Ultra-thin germanium-tin on insulator structure through direct bonding technique 査読有り

Maeda, T; Chang, WH; Irisawa, T; Ishii, H; Oka, H; Kurosawa, M; Imai, Y; Nakatsuka, O; Uchida, N

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Optoelectronic properties of high-Si-content-Gel-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure 査読有り

Fukuda, M; Rainko, D; Sakashita, M; Kurosawa, M; Buca, D; Nakatsuka, O; Zaima, S

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors 査読有り

Jeon, J; Suzuki, A; Takahashi, K; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 12 ) 2018年12月

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