研究者詳細 - 中塚理

論文 - 中塚理

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ゲルマニウムスズⅣ族混晶薄膜の結晶成長と電子物性招待有り査読有り

中塚理, 黒澤昌志

応用物理 88 巻 ( 9 ) 頁： pp. 597-603 2019年9月

Growth and applications of GeSn-related group-IV semiconductor materials 招待有り査読有り

S. Zaima, O. Nakatsuka, N. Taoka, M. Kuorsawa, W. Takeuchi, and M. Sakashita

Sci. Technol. Adv. Mater. 16 巻頁： 043502 (22pages) 2015年7月

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys 査読有り

Nagae, Y; Kurosawa, M; Shiraishi, K; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 2 ) 2025年2月

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique 査読有り

Maeda, T; Ishii, H; Chang, WH; Takagi, K; Shibayama, S; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 1 ) 2025年1月

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure 査読有り

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 巻頁： 79 - 85 2025年

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure (vol 13, pg 79, 2025) 査読有り

Shibayama, S; Ishimoto, S; Kato, Y; Sakashita, M; Kurosawa, M; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 巻頁： 134 - 134 2025年

Epitaxial growth of Ge1-xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation 査読有り

Shibayama, S; Shibata, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 17 巻 ( 11 ) 2024年11月

Ge1-xSnx layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping 査読有り

Shibayama, S; Takagi, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 176 巻 2024年6月

Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films 査読有り

Maeda, T; Ishii, H; Chang, WH; Zhang, SY; Shibayama, S; Kurosawa, M; Nakatsuka, O

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 176 巻 2024年6月

Tensile-strained Ge1-xSnx layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction 査読有り

Hiraide, T; Shibayama, S; Kurosawa, M; Sakashita, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 4 ) 2024年4月

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method 査読有り

Nagano, J; Ikeguchi, S; Doi, T; Sakashita, M; Nakatsuka, O; Shibayama, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 163 巻 2023年8月

Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence 査読有り

Hashimoto, K; Shibayama, S; Asaka, K; Sakashita, M; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( 7 ) 2023年7月

Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing 査読有り

Okada, K; Shibayama, S; Sakashita, M; Nakatsuka, O; Kurosawa, M

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 161 巻 2023年7月

Lattice-matched growth of high-Sn-content (x∼0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy 査読有り

Fujimoto, K; Kurosawa, M; Shibayama, S; Sakashita, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS 16 巻 ( 4 ) 2023年4月

Crystalline and optoelectronic properties of Ge1-xSnx/high-Si-content-SiyGe1-x-ySnx double-quantum wells grown with low-temperature molecular beam epitaxy 査読有り

Zhang, SY; Shibayama, S; Nakatsuka, O

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 38 巻 ( 1 ) 2023年1月

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1-x-y Si x Sn y epitaxial layers grown on GaAs(001) 査読有り

Kurosawa, M; Nakata, M; Zhan, TZ; Tomita, M; Watanabe, T; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( 8 ) 2022年8月

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments 査読有り

Itoh, M; Araidai, M; Ohta, A; Nakatsuka, O; Kurosawa, M

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface 査読有り

Kagoshima, E; Takeuchi, W; Kutsuki, K; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride 査読有り

Niwa, K; Iizuka, T; Kurosawa, M; Nakamura, Y; Valencia, HO; Kishida, H; Nakatsuka, O; Sasaki, T; Gaida, NA; Hasegawa, M

AIP ADVANCES 12 巻 ( 5 ) 2022年5月

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction 査読有り

Takeuchi, W; Kagoshima, E; Sumitani, K; Imai, Y; Shibayama, S; Sakashita, M; Kimura, S; Tomita, H; Nishiwaki, T; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SC ) 2022年5月

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