研究者詳細 - 中塚理

論文 - 中塚理

分割表示 286 件中 261 - 280 件目／全件表示 >>

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates 査読有り

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi

Jpn. J. Appl. Phys. 44 巻 ( 10 ) 頁： 7356-7363 2005年

*Improvement in NiSi/Si contact properties with C-implantation 査読有り

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima

Microelectronic Engineering 82 巻 ( 3-4 ) 頁： 479-484 2005年

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems 査読有り

A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda

Appl. Phys. Lett. 86 巻頁： 221916-221918 2005年

Initial growth behaviors of SiGeC in SiGe and C alternate deposition 査読有り

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing 8 巻 ( 1-3 ) 頁： 5-9 2005年

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations 査読有り

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing 8 巻 ( 1-3 ) 頁： 131-135 2005年

Influence of structural variation of Ni silicide thin films on electrical property for contact materials 査読有り

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 43 巻 ( 4B ) 頁： 1896-1900 2004年

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates 査読有り

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 104-107 2004年

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer 査読有り

T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda,

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 108-112 2004年

Si及びSi1-x-yGexCy上のNiシリサイド形成招待有り

中塚理, 酒井朗, 財満鎭明

電気学会研究会資料電子材料研究会 EFM-04 巻 ( 41-48 ) 頁： 25-30 2004年

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) 査読有り

E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 237 巻 ( 1-4 ) 頁： 150-155 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）

The initial growth of NiSi2 on Si(1 0 0) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts 査読有り

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 215-221 2004年

記述言語：英語掲載種別：研究論文（学術雑誌）

We have investigated the interfacial solid-phase reaction and electrical properties of Ni/Si and Ni/SiGeC systems with various Ge and C compositions. The incorporation of Ge into Si substrates raised the transition temperature from the NiSi phase to the NiSi2 phase. The incorporation of C effectively suppresses the agglomeration of NiSi and the formation of {1 1 1} facets at NiSi2/Si interface, which provides the low sheet resistance even after high temperature annealing. NiSi/Si systems show the contact resistivity as low as 1E-8 Ω sq.cm for both n+- and p+-type contacts. This is accounted by the pile-up of P at the NiSi/Si interface for n+-type and the low Schottky barrier height for p+-type contact. The pile-up of B at the NiSi/p+-Si0.996C0.004 interface after the annealing at 750deg.C is also found.

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) 査読有り

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 224 巻 ( 1-4 ) 頁： 117-121 2004年

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems 査読有り

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett. 83 巻 ( 5 ) 頁： 1005-1007 2003年

Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC 査読有り

R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami

Mater. Sci. Eng. B 98 巻 ( 3 ) 頁： 286-293 2003年

Effect of Al interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) 査読有り

O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci. 216 巻 ( 1-4 ) 頁： 174-180 2003年

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals 査読有り

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda,

Rapid Thermal Processing for Future Semiconductor Devices 頁： 29-35 2003年

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen 査読有り

R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 42 巻 ( 4B ) 頁： 1966-1970 2003年

Electrical properties and solid-phase reactions in Ni/Si(100) contacts 査読有り

Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys. 41 巻 ( 4B ) 頁： 2450-2454 2002年

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC 査読有り

O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami

Mater. Trans. 43 巻 ( 7 ) 頁： 1684-1688 2002年

CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC 査読有り

O. Nakatsuka, Y. Koide, and M. Murakami

Proc. of Silicon Carbide and Related Materials 2001 (MATERIALS SCIENCE FORUM) 389 巻 ( 3 ) 頁： 885-888 2002年

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